Theoretical Study of Doping in GaOOH for Electronics Applications
Abstract
:1. Introduction
2. Calculation
3. Results
4. Conclusions
Funding
Data Availability Statement
Conflicts of Interest
References
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GaOOH | Ga2O3 | |||
---|---|---|---|---|
GGA | Hybrid [5,7,8] | |||
group 14 | Si | shallow donor | shallow donor | shallow donor |
Ge | Ec − 0.75 (1/2) | |||
Sn | Ec − 0.7 (1/2) | shallow donor | shallow donor | |
group 17 | F (O) | Ec − 0.5 (1/2) | shallow donor | shallow donor |
F (OH) | Ev + 0.35 (2/2) | |||
Cl (O) | shallow donor | shallow donor | shallow donor | |
Cl (OH) | Ev + 0.6 (2/2) | |||
group 2 group 12 | Mg | shallow acceptor | shallow acceptor | Ev + 1.05 |
Ca | shallow acceptor | shallow acceptor | ||
Zn | Ev + 0.2 (1/2) | shallow acceptor | Ev + 1.22 | |
Cd | Ev + 0.3 (3/4) | shallow acceptor | ||
group 15 | N | Ev + 0.2 (3/4) | Ev + 0.1 | |
N-H | Ev + 0.35 (1/2) | |||
transition metals | Fe | Ec − 1.0 (5/6) | ||
Co | Ev + 1.3 (6/6) | Ev + 1~1.5 | ||
Ni | Ec − 1.0 (1/2), −0.5 (0/2) | Ev + 1.0 | ||
Cu | Ev + 0.9 (2/2), +1.2 (0/2) | Ev + 0.15 |
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Ichimura, M. Theoretical Study of Doping in GaOOH for Electronics Applications. Electron. Mater. 2023, 4, 148-157. https://doi.org/10.3390/electronicmat4040013
Ichimura M. Theoretical Study of Doping in GaOOH for Electronics Applications. Electronic Materials. 2023; 4(4):148-157. https://doi.org/10.3390/electronicmat4040013
Chicago/Turabian StyleIchimura, Masaya. 2023. "Theoretical Study of Doping in GaOOH for Electronics Applications" Electronic Materials 4, no. 4: 148-157. https://doi.org/10.3390/electronicmat4040013