Metal Oxides Based Futuristic Resistive Switching and Triboelectric Energy Harvesting

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 10 December 2024 | Viewed by 31

Special Issue Editors


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Guest Editor
Department of Ocean System Engineering, Jeju National University, Jeju 690-756, Republic of Korea
Interests: functional electronic polymeric materials; printed electronics; energy harnessing and storage systems

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Guest Editor
School of Physics and Chemistry, Queensland University of Technology, Brisbane 4000, QLD, Australia
Interests: material science; printed electronics; sensors; energy harvesting and storage systems

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Guest Editor
Department of Ocean System Engineering, Jeju National University, Jeju 690-756, Republic of Korea
Interests: functional electronic polymeric materials; printed electronics; layer peeling problem; optical signal processing
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Special Issue Information

Dear Colleagues,

Non-volatile memory (NVM), as the fourth fundamental passive circuit element proposed in 1971, can store two distinctive resistance states (the high-resistance state (HRS) and low-resistance state (LRS)). Since then, a variety of resistive switching devices have been developed in the hope of finding the next generation of NVMs, offering the advantage of being highly scalable: for example, 4F2 in a single layer could be further reduced to 4F2/n, where F is half of the pitch in a crossbar arrangement and n is the number of stacks of physical layers in resistive switching devices. However, these devices can incur several severe issues that result in frequent read/write errors and unnecessary power consumption. To enhance the performance of RRAM devices, researchers have proposed various approaches with regard to novel materials, designs, and properties. These advances will enable RRAM devices to be employed in futuristics neuroelectric technology. Hence, this Special Issue will consider all RRAM devices based on metal oxides and will publish both original research papers and review papers that contribute to this research topic.

Owing to the development of the Internet of Things (IoTs) and artificial intelligence (AI), the world has started to embrace complex distributed arrays of electronics and sensors, which create an urgent demand for distributed energy harvesters. In recent years, energy-harvesting devices have attracted tremendous attention, and a variety of energy-harvesting devices are now available for harnessing various types of energies. Among them, triboelectric nanogenerators (TENGs) are a novel energy-harnessing technology that can transform ubiquitous mechanical energy into valuable electricity based on the coupling effect of contact electrification and electrostatic induction. The transition metal oxide-based composites comprising antiferromagnetic and ferromagnetic constituents are of particular unique interest due to their large tunability, culminating in potential triboelectric technological applications. This Special Issue will include research, review, and comment articles related to metal oxide-based energy harvesting, considering various random motions in the universe. 

Dr. Qazi Muhammad Saqib
Dr. Mahesh Y. Chougale
Prof. Dr. Jinho Bae
Guest Editors

Manuscript Submission Information

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Keywords

  • metal oxides
  • resistive switching
  • neuromorphic devices
  • smart skin
  • sensor
  • triboelectric nanogenerators
  • energy harvesting
  • artificial intelligence

Published Papers

This special issue is now open for submission.
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