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Electronics
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Microwave, Millimeter and Terahertz Wave Power Electronic Devices
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Microwave, Millimeter and Terahertz Wave Power Electronic Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microwave and Wireless Communications".

Deadline for manuscript submissions: closed (31 January 2024) | Viewed by 10502

Special Issue Editors

Dr. Guo Liu

E-Mail Website
Guest Editor
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Interests: vacuum electronic devices; passive pulse compressor; microwave biosensor; dielectric microwave measurement
Special Issues, Collections and Topics in MDPI journals
Dr. Yan Wang

E-Mail Website
Guest Editor
School of Information Science and Technology, Fudan University, Shanghai 200433, China
Interests: antenna theory and design; mm-wave system design; intelligent beamforming
Special Issues, Collections and Topics in MDPI journals
Dr. Xianfeng Tang

E-Mail Website
Guest Editor
School of Physical Science and Technology, Southwest Jiaotong University, Chengdu Sichuan 611756, China
Interests: microwave; millimeter and terahertz vacuum electronic devices; metamaterial; antenna
Dr. Guoxiang Shu

E-Mail Website
Guest Editor
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
Interests: vacuum electronic devices; millimeter-wave/THz passive devices; dielectric microwave measurement
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Power sources based on the semiconductor and vacuum electronic device in the microwave, millimeter, and terahertz waves bands are now greatly changing our life in all aspects of living spaces, including communication, IoT, medical, bio-science, security, etc. Especially, with the development of advanced fabricated technologies such as MEMS, additive manufacturing and emerging materials such as metamaterials, graphene, and perovskite, the performance of powered electronic devices is improved greatly. Based on this consideration, we organized this Special Issue, “Microwave, Millimeter and Terahertz Wave Power Electronic Devices”. In this issue, we are looking for research papers, short communications, and review articles focusing on the latest theories, technologies, and applications related to solid-state semiconductors and vacuum electronic devices. The operating frequency can cover microwave, millimeter-wave, and terahertz-wave bands. Therefore, we invite scientists and engineers to contribute original research articles to this Special Issue. The topics can included but not limited to, the following:

  • Solid state power amplifiers (SSPA) and oscillators;
  • Vacuum electronic devices (VED);
  • Theory, modeling, fabrication, and measurement techniques for the power electronics;
  • Microwave, millimeter, and terahertz wave components, circuits, systems, and their applications in antennas, beamforming, sensors, communications, radars, etc.

We are looking forward to receiving your submissions and contributions to this Special Issue!

Dr. Guo Liu
Dr. Yan Wang
Dr. Xianfeng Tang
Dr. Guoxiang Shu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (6 papers)

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Research

11 pages, 3035 KiB  
Article
A Reconfigurable Three-Dimensional Electromagnetically Induced Transparency Metamaterial with Low Loss and Large Group Delay
by Pei Cheng, Zhongyin Xiao, Xuxian Jiang, Yulong Liu and Xianshun Cai
Electronics 2023, 12(24), 4930; https://doi.org/10.3390/electronics12244930 - 8 Dec 2023
Viewed by 3915
Abstract
In this paper, a solid-state plasma (SSP) metamaterial for an analog of the electromagnetically induced transparency phenomenon is designed and investigated. This electromagnetically induced transparency metamaterial has the ability to interact with both incident electric and magnetic fields, and its low-loss characteristics, slow-wave [...] Read more.
In this paper, a solid-state plasma (SSP) metamaterial for an analog of the electromagnetically induced transparency phenomenon is designed and investigated. This electromagnetically induced transparency metamaterial has the ability to interact with both incident electric and magnetic fields, and its low-loss characteristics, slow-wave effect, band reconfigurability, and polarization-insensitive characteristics are researched and explored. According to the tunable SSP, we have successfully implemented two modes of operation (mode 1 and mode 2) by whether the SSP resonance unit is excited or not. Low-loss characteristics and polarization-insensitive properties are achieved by rotating the split-ring resonator (SRR) by 180° in the plane and rotating the overall plane framework 90° to form a three-dimensional structure. After that, the maximum group delay of 261.51 ps and 785.09 ps as well as the delay bandwidth product of 17.51 and 62.96 at mode 1 and mode 2, respectively, are discussed respectively. This indicates a good slow-wave effect as well as a high efficiency of communication devices. After all, in mode 1, a transmission peak at 0.541 THz is observed for a transmission ratio of 92.05%; and in mode 2, a transmission peak at 0.741 THz is observed for a transmission ratio of 93.01%, resulting in a bandwidth shift of 0.2 THz. Due to the uniqueness of the developed metamaterial, it holds potential for a wide range of applications in slow-wave devices, modulators, sensors, and communications equipment. Full article
(This article belongs to the Special Issue Microwave, Millimeter and Terahertz Wave Power Electronic Devices)
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12 pages, 6018 KiB  
Article
Theoretical Design of a Dual-Band TE01/TE02 Mode Gyrotron Traveling Wave Tube
by Rutai Chen, Tianzhong Zhang, Qixiang Zhao and Sheng Yu
Electronics 2023, 12(15), 3282; https://doi.org/10.3390/electronics12153282 - 30 Jul 2023
Viewed by 835
Abstract
A dual-band (K/Ka) TE01/TE02 mode gyrotron traveling wave tube is presented in this article. To suppress parasitic oscillations, a lossy-dielectric-loaded interaction circuit is employed. The particle-in-cell simulation results show that when it operates in K-band, the operating mode is the [...] Read more.
A dual-band (K/Ka) TE01/TE02 mode gyrotron traveling wave tube is presented in this article. To suppress parasitic oscillations, a lossy-dielectric-loaded interaction circuit is employed. The particle-in-cell simulation results show that when it operates in K-band, the operating mode is the TE01 mode, with a peak output power of 87.1 kW, a saturated gain of 42.74 dB, and a −3 dB bandwidth of 0.7 GHz, and when it operates in Ka-band, the operating mode is the TE02 mode, with a peak output power of 62 kW, a saturated gain of 60.76 dB, and a −3 dB bandwidth of 2 GHz. Moreover, in the operating frequency range of the Ka-band, the overall gain is greater than 57 dB. To meet the requirements of dual-band operating, a dual-state magnetic injection gun is designed, a dual-mode coaxial cavity input coupler is proposed, and a dual-band output system is developed. All of these components showed excellent performance in simulations. Full article
(This article belongs to the Special Issue Microwave, Millimeter and Terahertz Wave Power Electronic Devices)
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16 pages, 9126 KiB  
Article
A Wide-Band Modeling Research of Voltage Transformer in EMU
by Yan Wu, Yongwang Che, Qingfeng Wang, Jianqiong Zhang, Xiangqiang Li and Xianfeng Tang
Electronics 2023, 12(13), 2844; https://doi.org/10.3390/electronics12132844 - 27 Jun 2023
Cited by 1 | Viewed by 826
Abstract
Considering that current voltage transformer models of electrical multiple units (EMUs) are narrow-band models or transformer models, this paper introduces a wide-band model of EMU voltage transformers based on the vector fitting method, circuit synthesis theory and black-box model theory. The admittances of [...] Read more.
Considering that current voltage transformer models of electrical multiple units (EMUs) are narrow-band models or transformer models, this paper introduces a wide-band model of EMU voltage transformers based on the vector fitting method, circuit synthesis theory and black-box model theory. The admittances of voltage transformers from 30 kHz to 5 MHz are measured by the vector network analyzer, the branch admittances in the pi-type equivalent circuit are calculated according to the equation of a two-port network equivalent circuit. Based on the vector matching method, the rational function formulas of branch admittances are obtained, and the formulas are converted into the circuit models by circuit synthesis theory. The pi-type equivalent circuit model is constructed in the simulation software, and so is the voltage transformer model in the range of 30 kHz–5 MHz. The frequency sweeping method is used to measure the transmission characteristics from direct current (DC)to 30 kHz. The pi-type model is modified according to transmission characteristics, whereby the wide-band model in DC-5 MHz is obtained. Fast pulse experiments are carried out on the voltage transformer, and the actual injected fast pulse voltage is used as the excitation source in the simulation model. The measurement and simulation results on the secondary side of the voltage transformer show that the wide-band model has a high accuracy. Full article
(This article belongs to the Special Issue Microwave, Millimeter and Terahertz Wave Power Electronic Devices)
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9 pages, 3990 KiB  
Communication
Electronic System of Remote Optical Control of LiNbO3 Mach-Zehnder Modulator Operating Point
by Peter Agruzov, Mikhail Parfenov, Aleksandr Tronev, Andrei Varlamov, Igor Ilichev, Anna Usikova and Aleksandr Shamrai
Electronics 2023, 12(1), 206; https://doi.org/10.3390/electronics12010206 - 31 Dec 2022
Cited by 2 | Viewed by 1496
Abstract
A system for integrated optical LiNbO3 Mach–Zehnder modulator operating point remote control and stabilization was developed. It consisted of a conventional telecom photodiode and a passive electronic circuit at the bias input of the modulator. Light from an amplitude-modulated laser was used [...] Read more.
A system for integrated optical LiNbO3 Mach–Zehnder modulator operating point remote control and stabilization was developed. It consisted of a conventional telecom photodiode and a passive electronic circuit at the bias input of the modulator. Light from an amplitude-modulated laser was used to remotely set the output voltage of the electronic circuit at the bias input of the Mach–Zehnder modulator. Information regarding the current operating point that had been provided with feedback system implementation was taken from DC values of high frequency photodetector currents. Efficient remote control of the modulator operating point over 1 km of a single-mode optical fiber, which multiplexes an optical carrier at 1550 nm and a low frequency control signal with a peak power of 2 mW at 1310 nm, was demonstrated. The results could be of interest for antenna remoting, radio-over-fiber (RoF) technology, and other applications with broadband optical transmission from remote sources in a distributed network. Full article
(This article belongs to the Special Issue Microwave, Millimeter and Terahertz Wave Power Electronic Devices)
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12 pages, 5968 KiB  
Article
Improved Algorithms for Calculating the Space-Charge Field in Vacuum Devices
by Jiezhong Luo, Hao Zhang, Hang Du, Ruifeng Zhang, Han Lai, Fei Xiao and Huarong Gong
Electronics 2022, 11(18), 2852; https://doi.org/10.3390/electronics11182852 - 9 Sep 2022
Cited by 1 | Viewed by 1104
Abstract
The space-charge field (SCF) is a key factor in vacuum electronic devices, accelerators, free electron lasers and plasma systems, etc. The calculation of the SCF is very important since it has a great influence on the precision of numerical simulation results. However, calculating [...] Read more.
The space-charge field (SCF) is a key factor in vacuum electronic devices, accelerators, free electron lasers and plasma systems, etc. The calculation of the SCF is very important since it has a great influence on the precision of numerical simulation results. However, calculating the SCF usually takes a lot of time, especially when the number of simulated particles is large. In this paper, we used a vectorization, parallelization and truncation method to optimize the calculation of the SCF based on the traditional calculation algorithms. To verify the validity of the optimized SCF calculation algorithm, it was applied in the performance simulation of a millimeter wave traveling wave tube. The results showed that the time cost was reduced by three orders compared with conventional treatment. The proposed algorithm also has great potential applications in free electron lasers, accelerators and plasma systems. Full article
(This article belongs to the Special Issue Microwave, Millimeter and Terahertz Wave Power Electronic Devices)
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6 pages, 2542 KiB  
Article
Performance Analysis of Custom Dual-Finger 250 nm InP HBT Devices for Implementation of 255 GHz Amplifiers
by Yoon Kyeong Koh, Yang Woo Kim and Moonil Kim
Electronics 2022, 11(16), 2614; https://doi.org/10.3390/electronics11162614 - 20 Aug 2022
Viewed by 1276
Abstract
The performances of WR-3.4 monolithic amplifiers fabricated using dual-finger 6 µm InP HBT devices are investigated. While one amplifier uses the dual-finger devices formed by simply connecting two existing standard single-finger HBTs, the second amplifier uses newly formed devices that share a common [...] Read more.
The performances of WR-3.4 monolithic amplifiers fabricated using dual-finger 6 µm InP HBT devices are investigated. While one amplifier uses the dual-finger devices formed by simply connecting two existing standard single-finger HBTs, the second amplifier uses newly formed devices that share a common collector metal on a single merged device isolation area. The amplifiers using two types of devices based on the identical matching networks are fabricated for on-wafer probing tests. The custom merged-device amplifier shows clear performance advantages over the separate-device amplifier, showing a peak gain of 10.5 dB and the maximum output power of 5.2 dBm at 255 GHz. Full article
(This article belongs to the Special Issue Microwave, Millimeter and Terahertz Wave Power Electronic Devices)
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