Recent Advances in Functional Semiconductor Nanostructures: From Properties to Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: 10 October 2024 | Viewed by 1094

Special Issue Editors


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Guest Editor
CNR Institute for Microelectronics and Microsystems, 73100 Lecce, Italy
Interests: epitaxial growth and self-assembly; optical properties of semiconductor nano-/heterostructures; nanowires; nanodevices for photonics; nano-optoelectronics; photovoltaics and quantum science and technology

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Guest Editor
Tyndall National Institute, University College Cork, Cork, Ireland
Interests: epitaxy; growth modeling; heterointerfaces; quantum dots; quantum optics; entangled photons and photonic qubits

Special Issue Information

Dear Colleagues,

In the last decades, rapid technological progress has enabled the realization of semiconductor structures down to the nanometer scale with great precision, by using highly sophisticated nanoepitaxial growth techniques and nanofabrication. Today, low-dimensional heterostructures continue to receive remarkable attention due to their unique properties. These systems are considered ideal building blocks for the fabrication of efficient devices exhibiting novel functionalities. As such, they are pivotal to several emerging technologies and advanced applications in areas as diverse as photonics, nanoelectronics, sensing, photovoltaics, and quantum science.

This Special Issue aims to collect recent advances on the comprehension of the fundamental properties, the diverse methods for the synthesis/fabrication, and the physical–chemical characterization of such emerging nanostructures, along with novel applications. It focuses on the different semiconductor nanostructures, including zero-dimensional (quantum dots) and one-dimensional (nanowires) nanostructures, as well as two-dimensional layered materials and related van der Waals heterostructures.

Dr. Paola Prete
Dr. Emanuele Pelucchi
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor-based zero-dimensional nanostructures (quantum dots)
  • nanowire heterostructures, core-shell and multi-shell nanowires
  • quantum dots in nanowire structures
  • graphene and graphene-like materials
  • two-dimensional layered materials and related heterostructures
  • semiconductor- and carbon-based nanotubes
  • Van der Waals epitaxy
  • nanoepitaxy
  • MOVPE/MBE epitaxial growth and self-assembly
  • nanodevices for photonics, nanoelectronics, sensing, and photovoltaics
  • semiconductor nanostructures for quantum science and technology

Published Papers (1 paper)

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Research

11 pages, 2824 KiB  
Article
Synthesis and Characterization of SiO2-Based Graphene Nanoballs Using Copper-Vapor-Assisted APCVD for Thermoelectric Application
by Nurkhaizan Zulkepli, Jumril Yunas, Muhammad Aniq Shazni Mohammad Haniff, Dedi, Mohamad Shukri Sirat, Muhammad Hilmi Johari, Nur Nasyifa Mohd Maidin, Aini Ayunni Mohd Raub and Azrul Azlan Hamzah
Nanomaterials 2024, 14(7), 618; https://doi.org/10.3390/nano14070618 - 1 Apr 2024
Viewed by 755
Abstract
This study describes a method by which to synthesize SiO2-based graphene nanoballs (SGB) using atmospheric pressure chemical vapor deposition (APCVD) with copper vapor assistance. This method should solve the contamination, damage, and high costs associated with silica-based indirect graphene synthesis. The [...] Read more.
This study describes a method by which to synthesize SiO2-based graphene nanoballs (SGB) using atmospheric pressure chemical vapor deposition (APCVD) with copper vapor assistance. This method should solve the contamination, damage, and high costs associated with silica-based indirect graphene synthesis. The SGB was synthesized using APCVD, which was optimized using the Taguchi method. Multiple synthesis factors were optimized and investigated to find the ideal synthesis condition to grow SGB for thermoelectric (TE) applications. Raman spectra and FESEM-EDX reveal that the graphene formed on the silicon nanoparticles (SNP) is free from copper. The prepared SGB has excellent electrical conductivity (75.0 S/cm), which shows better results than the previous report. Furthermore, the SGB nanofillers in bismuth telluride (Bi2Te3) nanocomposites as TE materials exhibit a significant increment in Seebeck coefficients (S) compared to the pure Bi2Te3 sample from 109 to 170 μV/K at 400 K, as well as electrical resistivity decrement. This approach would offer a simple strategy to improve the TE performance of commercially available TE materials, which is critical for large-scale industrial applications. Full article
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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Title: High sensitivity and selectivity carbon-based FET for biosensing applications : A review
Authors: Anis Amirah Alim, Azrul Azlan Hamzah
Affiliation: Universiti Kebangsaan Malaysia
Abstract: Carbon-based field-effect transistors (FETs) have garnered significant research attention due to their potential in detecting a wide range of analytes with great sensitivity and selectivity. Comprehensive analysis of high-performance carbon-based field-effect transistors (FETs) utilised in the detection of proteins and DNA. The fundamental principles of FET operation highlight the unique properties of carbon-based materials such as graphene, carbon nanotubes (CNTs), and graphene oxide (GO) and discuss their integration into FETs for biosensing applications. In this review, we discuss the intrinsic properties of carbon-based materials that make them ideal for FET biosensing applications, including their high carrier mobility and ease of functionalisation. The techniques applied to enhance the sensitivity are critically examined, such as surface modification with nanomaterials, the incorporation of bioreceptors, and the optimisation of the FET device architecture. Special emphasis is placed on novel approaches like using hybrid nanostructures, doping strategies, and integrating advanced materials like metal nanoparticles and 2D materials to boost the signal-to-noise ratio. Furthermore, we explore the methods to increase selectivity, including the design of highly specific recognition elements, such as aptamers and molecularly imprinted polymers. This review also highlights the real-time and multiplexed detection capabilities, positioning carbon-based FET biosensors at the forefront of the next-generation diagnostic tools. Finally, by identifying the key challenges and future directions, this review aims to inspire further research and development in carbon-based FET biosensors, ultimately contributing to the advancement of highly sensitive and selective biosensing technologies for medical applications.

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