materials-logo

Journal Browser

Journal Browser

Thin Films and Semiconductor Heterostructures: From Fundamental to Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 20 December 2024 | Viewed by 1119

Special Issue Editor


E-Mail Website
Guest Editor
Institute of Electronics and Photonics, Slovak University of Technology, Bratislava, Slovakia
Interests: advanced semiconductors and organic semiconductors; thin-film technology and nanotechnology; nanostructures materials; device physics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor heterostructures are engineered materials composed of different semiconducting materials that are stacked or layered together to bring unique electronic properties. In addition, the thin-film technology provides an ideal tool for the design of nanostructured interfaces offering novel quantum effects. These structures are designed to combine the favorable properties of multiple semiconductors, enabling the development of high-performance electronic devices. Semiconductor heterostructures offer a versatile platform for tailoring the electronic properties of materials, enabling the creation of high-performance electronic devices. Through the strategic combination of different semiconductors and the manipulation of carrier behavior, these heterostructures play a crucial role in advancing technologies such as optoelectronics, quantum computing, and high-speed electronics.

This Special Issue will compile recent developments in the field of thin films and semiconductor heterostructures. The articles presented in this Special Issue will cover various topics, including advanced semiconductor materials and 2D materials, the optimization of deposition methods, thin-film device fabrication, and device characterization techniques. Topics are open to metal oxide thin film deposition and characterization for the development of applications.

Prof. Dr. Martin Weis
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • advanced semiconductors and 2D materials
  • thin-film technology and nanotechnology
  • heterostructures and quantum‒well structures
  • device fabrication techniques
  • novel device characterization techniques

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

13 pages, 2282 KiB  
Article
Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates
by Marco Girolami, Matteo Bosi, Sara Pettinato, Claudio Ferrari, Riccardo Lolli, Luca Seravalli, Valerio Serpente, Matteo Mastellone, Daniele M. Trucchi and Roberto Fornari
Materials 2024, 17(2), 519; https://doi.org/10.3390/ma17020519 - 22 Jan 2024
Cited by 1 | Viewed by 912
Abstract
Orthorhombic κ-Ga2O3 thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic properties of the obtained heterostructures were evaluated by optical [...] Read more.
Orthorhombic κ-Ga2O3 thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic properties of the obtained heterostructures were evaluated by optical microscopy, X-ray diffraction, current-voltage measurements, and spectral photoconductivity, respectively. Results show that a very slow cooling, performed at low pressure (100 mbar) under a controlled He flow soon after the growth process, is mandatory to improve the quality of the κ-Ga2O3 epitaxial thin film, ensuring a good adhesion to the diamond substrate, an optimal morphology, and a lower density of electrically active defects. This paves the way for the future development of novel hybrid architectures for UV and ionizing radiation detection, exploiting the unique features of gallium oxide and diamond as wide-bandgap semiconductors. Full article
Show Figures

Figure 1

Back to TopTop