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Sensors 2013, 13(2), 1856-1871; doi:10.3390/s130201856
Article

A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI

*  and
Microelectronics EMC Group, Eln. Department, Politecnico di Torino, Corso Duca degli Abruzzi, 24, I-10129 Torino, Italy
* Author to whom correspondence should be addressed.
Received: 8 November 2012 / Revised: 27 December 2012 / Accepted: 8 January 2013 / Published: 31 January 2013
(This article belongs to the Special Issue State-of-the-Art Sensors Technology in Italy 2012)
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Abstract

This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor.
Keywords: current sensor; CMOS integrated circuit; smart power; electromagnetic interference (EMI); electromagnetic compatibility (EMC); senseFET; miller effect current sensor; CMOS integrated circuit; smart power; electromagnetic interference (EMI); electromagnetic compatibility (EMC); senseFET; miller effect
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Aiello, O.; Fiori, F. A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI. Sensors 2013, 13, 1856-1871.

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