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Materials 2012, 5(12), 2597-2608; doi:10.3390/ma5122597

Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, Vilnius 10222, Lithuania
Odessa I.I. Mechnikov National University, Dvoryanskaya str. 2, Odessa 65082, Ukraine
Author to whom correspondence should be addressed.
Received: 8 November 2012 / Revised: 23 November 2012 / Accepted: 23 November 2012 / Published: 4 December 2012
(This article belongs to the Special Issue Compound Semiconductor Materials)
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Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.
Keywords: Cu2S-CdS heterojunctions; CdS polycrystalline layers; carrier traps; optical injection DLTS; photo-ionization spectroscopy Cu2S-CdS heterojunctions; CdS polycrystalline layers; carrier traps; optical injection DLTS; photo-ionization spectroscopy
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Gaubas, E.; Brytavskyi, I.; Ceponis, T.; Kalendra, V.; Tekorius, A. Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures. Materials 2012, 5, 2597-2608.

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