Next Article in Journal / Special Issue
Bound States and Supercriticality in Graphene-Based Topological Insulators
Previous Article in Journal
Magnetism and Pressure-Induced Superconductivity of Checkerboard-Type Charge-Ordered Molecular Conductor β-(meso-DMBEDT-TTF)2X (X = PF6 and AsF6)
Article Menu

Export Article

Open AccessArticle
Crystals 2013, 3(1), 1-13; https://doi.org/10.3390/cryst3010001

Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC

1
Department of Physics, Chemistry and Biology, Linköping University, Linköping 58183, Sweden
2
MAX-lab, Lund University, Lund 22100, Sweden
*
Author to whom correspondence should be addressed.
Received: 16 November 2012 / Revised: 17 December 2012 / Accepted: 9 January 2013 / Published: 15 January 2013
(This article belongs to the Special Issue Graphenes)
View Full-Text   |   Download PDF [1475 KB, uploaded 16 January 2013]   |  

Abstract

Graphene grown on C-face SiC substrates using two procedures, high and low growth temperature and different ambients, was investigated using Low Energy Electron Microscopy (LEEM), X-ray Photo Electron Electron Microscopy (XPEEM), selected area Low Energy Electron Diffraction (μ-LEED) and selected area Photo Electron Spectroscopy (μ-PES). Both types of samples showed formation of μm-sized grains of graphene. The sharp (1 × 1) μ-LEED pattern and six Dirac cones observed in constant energy photoelectron angular distribution patterns from a grain showed that adjacent layers are not rotated relative to each other, but that adjacent grains in general have different azimuthal orientations. Diffraction spots from the SiC substrate appeared in μ-LEED patterns collected at higher energies, showing that the rotation angle between graphene and SiC varied. C 1s spectra collected did not show any hint of a carbon interface layer. A hydrogen treatment applied was found to have a detrimental effect on the graphene quality for both types of samples, since the graphene domain/grain size was drastically reduced. From hydrogen treated samples, μ-LEED showed at first a clear (1 × 1) pattern, but within minutes, a pattern containing strong superstructure spots, indicating the presence of twisted graphene layers. The LEED electron beam was found to induce local desorption of hydrogen. Heating a hydrogenated C-face graphene sample did not restore the quality of the original as-grown sample. View Full-Text
Keywords: C-face graphene; layer registry; large grain sizes; sublimation growth; hydrogen treatment C-face graphene; layer registry; large grain sizes; sublimation growth; hydrogen treatment
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Johansson, L.I.; Xia, C.; Hassan, J.U.; Iakimov, T.; Zakharov, A.A.; Watcharinyanon, S.; Yakimova, R.; Janzén, E.; Virojanadara, C. Is the Registry Between Adjacent Graphene Layers Grown on C-Face SiC Different Compared to That on Si-Face SiC. Crystals 2013, 3, 1-13.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Crystals EISSN 2073-4352 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top