Radiation Effects in Carbon Nanoelectronics
AbstractWe experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nanoelectronics devices.
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Cress, C.D.; McMorrow, J.J.; Robinson, J.T.; Landi, B.J.; Hubbard, S.M.; Messenger, S.R. Radiation Effects in Carbon Nanoelectronics. Electronics 2012, 1, 23-31.
Cress CD, McMorrow JJ, Robinson JT, Landi BJ, Hubbard SM, Messenger SR. Radiation Effects in Carbon Nanoelectronics. Electronics. 2012; 1(1):23-31.Chicago/Turabian Style
Cress, Cory D.; McMorrow, Julian J.; Robinson, Jeremy T.; Landi, Brian J.; Hubbard, Seth M.; Messenger, Scott R. 2012. "Radiation Effects in Carbon Nanoelectronics." Electronics 1, no. 1: 23-31.