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Journal: Electronics, 2013
Volume: 2
Number: 234

Article: Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)
Authors: by Ivan S. Esqueda, Cory D. Cress, Travis J. Anderson, Jonathan R. Ahlbin, Michael Bajura, Michael Fritze and Jeong-S. Moon
Link: https://www.mdpi.com/2079-9292/2/3/234

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