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Crystals
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Hydride Vapor Phase Epitaxy Growth of Crystals
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Hydride Vapor Phase Epitaxy Growth of Crystals

A special issue of Crystals (ISSN 2073-4352).

Deadline for manuscript submissions: closed (31 March 2019) | Viewed by 15150

Special Issue Editor

Prof. Dr. Tania Paskova

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695, USA
Interests: Wide bandgap nitrides and oxides, crystal growth; epitaxy, microstructure, strain, emission properties, electrical and thermal transport; surface science, technology roadmaps

Special Issue Information

Dear Colleagues,

Hydride vapor phase epitaxy (HVPE) is one of the epitaxial growth techniques pioneered by V.S. Ban and C.H. Park’s group in the United States, and Philips Laboratoire d’Electronique et de PhysiqueApplique´e in Europe, in the 1960s and 1970s, for growth of III-V semiconductor epilayers. Significant progress has been demonstrated for a variety of III-V compounds, alloys and even heterostructures. The method attracted a renewed strong interest in the 1990s when it proved successful for nitride growth, and particularly for growth of so-called quasi-bulk substrates. Due to the enormous difficulties experienced in growing bulk nitrides using conventional bulk crystal growth methods, the HVPE made a significant impact, due to its ability to achieve very high growth rates of hundreds of micrometers per hour, enabling growth of thick epitaxial layers on foreign substrates that could subsequently be released from the substrates to produce quasi-bulk nitride wafers. The importance of this method was further validated by more recent demonstrations of HVPE ability to grow planar layers on nonplanar substrates, as well as submicrometer scale structures and high quality nanowires.

HVPE was always considered to be a challenging method, sometimes lacking reproducibility and versatility despite its flexibility due to its almost equilibrium character, high growth rate, selectivity and anisotropy growth capability. The properties of the materials and structures grown by HVPE have often been controversially reported, reflecting the vast promises and critical challenges of the method and provoking researchers to further explore its full potential.

The current Special Issue of Crystals provides a forum for discussion and presentations on all research aspects of HVPE growth, properties and applications of materials and structures grown by this technique. We invite investigators to submit original articles on their studies. Potential topics include, without being limited to:

  • HVPE growth technology
  • Thermodynamics and kinetics modeling
  • HVPE growth mechanisms and limitations
  • Heteroepitaxial challenges
  • Buffers and strain mitigation
  • Selective area growth and orientation-controlled growth
  • Planar growth on nonplanar substrates
  • HVPE growth of nanowires
  • Crystal properties and applications

Prof. Tania Paskova
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • HVPE
  • III-V semiconductors
  • thermodynamics and growth kinetics
  • bulk crystal growth
  • epitaxial thin films
  • planar growth on nonplanar substrates
  • nanowiries
  • point defects, doping
  • strain and dislocations
  • material characterization

Published Papers (2 papers)

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Research

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14 pages, 3558 KiB  
Article
III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy
by John Simon, Kevin L. Schulte, Kelsey A. W. Horowitz, Timothy Remo, David L. Young and Aaron J. Ptak
Crystals 2019, 9(1), 3; https://doi.org/10.3390/cryst9010003 - 20 Dec 2018
Cited by 45 | Viewed by 8511
Abstract
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the [...] Read more.
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market. Full article
(This article belongs to the Special Issue Hydride Vapor Phase Epitaxy Growth of Crystals)
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Review

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46 pages, 14242 KiB  
Review
Thick Hydride Vapor Phase Heteroepitaxy: A Novel Approach to Growth of Nonlinear Optical Materials
by Vladimir L. Tassev and Shivashankar R. Vangala
Crystals 2019, 9(8), 393; https://doi.org/10.3390/cryst9080393 - 30 Jul 2019
Cited by 10 | Viewed by 5399
Abstract
At the time when many nonlinear optical (NLO) materials for frequency conversion of laser sources in the mid and long-wave infrared have achieved their fundamental or technological limits, we propose heteroepitaxy as a solution to develop novel NLO materials. Heteroepitaxy, is the most [...] Read more.
At the time when many nonlinear optical (NLO) materials for frequency conversion of laser sources in the mid and long-wave infrared have achieved their fundamental or technological limits, we propose heteroepitaxy as a solution to develop novel NLO materials. Heteroepitaxy, is the most applied method to combine two different materials—by growing one material on another. In this work we show that combining two binary materials in a ternary may significantly improve the NLO properties that are of great importance for the pursued applications. Plus, due to the closer lattice match to the related substrate, a ternary is always a more favorable heteroepitaxial case than the two completely different materials. We also discuss combining different growth methods—one close-to-equilibrium (e.g., hydride vapor phase epitaxy—HVPE) with one far-from-equilibrium (e.g., metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE)) growth processes—to explore new opportunities for the growth of novel heterostructures, including ternary layers with gradual change in composition. The combination of different materials by nature—organics with inorganics—in a hybrid quasi-phase matching (QPM) structure is another topic we briefly discuss, along with some innovative techniques for the fabrication of orientation-patterned (OP) templates, including such that are based on the most universal semiconductor material—Si. Still, the focus in this work is on a series of NLO materials—GaAs, GaP, ZnSe, GaSe, ZnTe, GaN… and some of their ternaries grown with high surface and crystalline quality on non-native substrates and on non-native OP templates using hydride vapor phase epitaxy (HVPE). The grown thick device quality QPM structures were used for further development of high power, compact, broadly tunable frequency conversion laser sources for the mid and longwave infrared with various applications in defense, security, industry, medicine and science. Full article
(This article belongs to the Special Issue Hydride Vapor Phase Epitaxy Growth of Crystals)
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