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Crystals
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Synthesis and Characterization of Diamond Crystals
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Synthesis and Characterization of Diamond Crystals

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (30 June 2019) | Viewed by 30519

Special Issue Editor

Prof. Vladimir Blank

E-Mail Website
Guest Editor
1. Technological Institute for Superhard and Novel Carbon Materials, 108840, Centralnaya Str. 7a, Troitsk, 108840 Moscow, Russia
2. Department of Molecular and Chemical Physics, Moscow Institute of Physics and Technology StateUniversity, 141700, Institutskiy Per. 9, Dolgoprudny, 141700 Moscow, Russia
Interests: superhard materials; synthetic diamonds; HPHT and CVD methods; carbon phase diagram; high tech diamond products; characterization of diamond crystals, including X-ray and optic properties

Special Issue Information

Dear Colleagues,

The appearance of diamond crystal synthesis and the measurement of their structure and properties began in the middle of the 20th century, and has expanded considerably until the present, when synthetic diamonds are produced on an industrial scale. Synthetic diamonds have become widely used in key areas of modern industry (mining industry, machinery building, electronics, medicine, aerospace, and so on).

The development of this area led to the synthesis of high-purity, semiconductor and multilayer diamond crystals, which have no natural analogues. Possessing unique functional and operational properties, such diamonds are used in high-tech areas of industry and in fundamental scientific research—these two features are the main reasons for producing the current Special Issue.

This Special Issue on “Synthesis and Characterization of Diamond Crystals” will provide a unique international forum where scientists, engineers and practitioners in the field will be able to share their most recent, novel findings and understanding of basic principles, advanced techniques, and applications of synthetic diamonds.

The topics summarized in the keywords provide general examples of more subtopics. This volume is especially open for any innovative contributions related to the aspects of diamond growth and the study of their properties.

Prof. Vladimir Blank
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Synthetic diamond
  • Diamond growth
  • Diamond characterization
  • High-tech diamond application

Published Papers (6 papers)

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Research

14 pages, 5149 KiB  
Article
A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN
by Mohamadali Malakoutian, Matthew A. Laurent and Srabanti Chowdhury
Crystals 2019, 9(10), 498; https://doi.org/10.3390/cryst9100498 - 25 Sep 2019
Cited by 21 | Viewed by 5141
Abstract
Diamond has the most desirable thermal properties for applications in electronics. In principle, diamond is the best candidate for integration with other materials for thermal management due to its high thermal conductivity. Therefore, if low thermal boundary resistance can be developed between diamond [...] Read more.
Diamond has the most desirable thermal properties for applications in electronics. In principle, diamond is the best candidate for integration with other materials for thermal management due to its high thermal conductivity. Therefore, if low thermal boundary resistance can be developed between diamond and the semiconductor material, it would most effectively channel the heat away from areas of high power dissipation. Recent advancement of N-polar GaN in high power RF and conventional power electronics motivated us to study the diamond/Si3N4/GaN interface to understand how effectively the heat can be transferred from the GaN channel to diamond heat-sink. Prior studies showed that there are challenges in incorporating diamond with GaN while still maintaining the high crystalline quality necessary to observe the desirable thermal properties of the material. Therefore, in this study we investigated the influence of methane concentration (0.5–6%), gas pressure (40–90 Torr), sample surface temperature (600–850 °C), and growth duration (1~5 h) on polycrystalline diamond growth. The diamond/Si3N4/GaN interface looks abrupt with no signs of etching of the GaN for the samples with methane concentration above 2%, pressures up to 90 Torr, and temperatures < 850 °C, allowing for incorporation of diamond close to the active region of the device. This approach contrasts with most prior research, which require surface roughening and thick growth on the backside. Full article
(This article belongs to the Special Issue Synthesis and Characterization of Diamond Crystals)
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11 pages, 4106 KiB  
Article
The Influence of B, N and Si Doping on the CH3 Adsorption on the Diamond Surface Based on DFT Calculations
by Liang Wang, Jiangshan Liu and Tang Tang
Crystals 2019, 9(8), 427; https://doi.org/10.3390/cryst9080427 - 17 Aug 2019
Cited by 5 | Viewed by 4518
Abstract
To better understand the influence mechanism of boron, nitrogen and silicon dopants on the growth of chemical vapor deposition (CVD) diamond film, density functional calculations have been performed to reveal the different impact of the impurities on the CH3 adsorption on diamond [...] Read more.
To better understand the influence mechanism of boron, nitrogen and silicon dopants on the growth of chemical vapor deposition (CVD) diamond film, density functional calculations have been performed to reveal the different impact of the impurities on the CH3 adsorption on diamond surface. The substituted doping and radical doping of diamond (111) and (100) − 2 × 1 surface are both considered. The calculation results indicate that the CH3 radicals are hardly adsorbed on nitrogen atoms and thus may cause vacancy in the diamond lattice easily. Boron substituted doping will disfavor the adsorption of CH3 due to the lacking of valence electron. However, the empty p orbitals of boron atom will help the chemical adsorbing of CH3 radicals. The substituted silicon doping has little influence on the CH3 adsorption, as Si atom has the same outer valence electron structure with C atom. In the case of radical doping, the adsorption energy of CH3 will be reduced due to the steric hindrance between NH2 or SiH3 with CH3. The adsorption energy can be slightly enhanced when BH2 radical is pre-adsorbed on diamond (111) surface. However, the BH2 pre-adsorbed on diamond (100) − 2 × 1 surface may interact with surface radical carbon site and result in a large reduction of CH3 adsorption energy. Thus, the boron doping may hinder the formation of the (100) facet during the CVD diamond deposition under a certain condition. Full article
(This article belongs to the Special Issue Synthesis and Characterization of Diamond Crystals)
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11 pages, 3470 KiB  
Article
Selection of CVD Diamond Crystals for X-ray Monochromator Applications Using X-ray Diffraction Imaging
by Stanislav Stoupin, Thomas Krawczyk, Zunping Liu and Carl Franck
Crystals 2019, 9(8), 396; https://doi.org/10.3390/cryst9080396 - 31 Jul 2019
Cited by 6 | Viewed by 5777
Abstract
A set of 20 single crystal diamond plates synthesized using chemical vapor deposition (CVD) was studied using X-ray diffraction imaging to determine their applicability as side-bounce (single-reflection) Laue monochromators for synchrotron radiation. The crystal plates were of optical grade (as provided by the [...] Read more.
A set of 20 single crystal diamond plates synthesized using chemical vapor deposition (CVD) was studied using X-ray diffraction imaging to determine their applicability as side-bounce (single-reflection) Laue monochromators for synchrotron radiation. The crystal plates were of optical grade (as provided by the supplier) with (001) nominal surface orientation. High dislocation density was found for all samples. Distortions in the crystal lattice were quantified for low-index Laue reflections of interests using rocking curve topography. Maps of effective radius of curvature in the scattering plane were calculated using spline interpolation of the rocking curve peak position across the studied plates. For several selected plates, nearly flat regions with large effective radius of curvature were found ( R 0 ≳ 30 − 70 m, some regions as large as 1 × 4 mm 2 ). The average width of the rocking curve for these regions was found to be about 150 μ rad (r.m.s.). These observations suggest that the selected CVD diamond plates could be used as intermediate-bandwidth monochromators refocusing the radiation source to a specific location downstream with close to 1:1 distance ratio. Full article
(This article belongs to the Special Issue Synthesis and Characterization of Diamond Crystals)
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10 pages, 6009 KiB  
Article
Influence of the Heat Dissipation Mode of Long-Flute Cutting Tools on Temperature Distribution during HFCVD Diamond Films
by Tao Zhang, Yizheng Qian, Shu Wang, Guodong Huang, Lijun Zhang and Zhe Xue
Crystals 2019, 9(8), 394; https://doi.org/10.3390/cryst9080394 - 30 Jul 2019
Cited by 9 | Viewed by 2567
Abstract
The distribution of substrate temperature plays a decisive role on the uniformity of polycrystalline diamond films on cemented carbide tools with a long flute, prepared by a hot filament chemical vapor deposition (HFCVD). In this work, the heat dissipation mode at the bottom [...] Read more.
The distribution of substrate temperature plays a decisive role on the uniformity of polycrystalline diamond films on cemented carbide tools with a long flute, prepared by a hot filament chemical vapor deposition (HFCVD). In this work, the heat dissipation mode at the bottom of tools is a focal point, and the finite volume method (FVM) is conducted to simulate and predict the temperature field of tools, with the various materials of the holder placed under the tools. The simulation results show that the thermal conductivity of the holder affects the temperature difference of the individual tools greatly, but only affects the temperature of different tools at the same XY plane slightly. Moreover, the ceramic holder can reduce the difference in temperature of an individual tool by 54%, compared to a copper one. Afterwards, the experiments of the deposition of diamond films is performed using the preferred ceramic holder. The diamond coatings on the different positions present a highly uniform distribution on their grain size, thickness, and quality. Full article
(This article belongs to the Special Issue Synthesis and Characterization of Diamond Crystals)
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11 pages, 2899 KiB  
Article
Simulation-Based Development of a New Cylindrical-Cavity Microwave-Plasma Reactor for Diamond-Film Synthesis
by Qijun Wang, Gai Wu, Sheng Liu, Zhiyin Gan, Bo Yang and Junheng Pan
Crystals 2019, 9(6), 320; https://doi.org/10.3390/cryst9060320 - 24 Jun 2019
Cited by 15 | Viewed by 6223
Abstract
A 2.45 GHz microwave-plasma chemical-vapor deposition (MPCVD) reactor was designed and built in-house by collaborating with Guangdong TrueOne Semiconductor Technology Co., Ltd. A cylindrical cavity was designed as the deposition chamber and a circumferential coaxial-mode transformer located at the top of the cavity [...] Read more.
A 2.45 GHz microwave-plasma chemical-vapor deposition (MPCVD) reactor was designed and built in-house by collaborating with Guangdong TrueOne Semiconductor Technology Co., Ltd. A cylindrical cavity was designed as the deposition chamber and a circumferential coaxial-mode transformer located at the top of the cavity was adopted as the antenna. Two quartz-ring windows that were placed far away from the plasma and cooled by water-cooling cavity walls were used to affix the antenna to the cavity and act as a vacuum seal for the reactor, respectively. This design improved the sealing and protected the quartz windows. In addition, a numerical simulation was proposed to predict the electric-field and plasma-density distributions in the cavity. Based on the simulation results, a microwave-plasma reactor with TM021 mode was built. The leak rate of this new reactor was tested to be as low as 1 × 10−8 Pa·m3·s−1, and the maximal microwave power was as high as 10 kW. Then, single-crystal diamond films were grown with the morphology and crystalline quality characterized by an optical microscope, atomic force microscope (AFM), Raman spectrometer, photoluminescence (PL) spectrometer, and high-resolution X-ray diffractometer. It was shown that the newly developed MPCVD reactor can produce diamond films with high quality and purity. Full article
(This article belongs to the Special Issue Synthesis and Characterization of Diamond Crystals)
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Graphical abstract

9 pages, 3006 KiB  
Article
Single Crystal Diamond Deposited by Dual Radio-Frequency Plasma Jet CVD with High Growth Rate
by Hao Liu, Jia-jun Li, Zhen-rui Li, Kai Xu, Zheng-jia Chen and Guang-chao Chen
Crystals 2019, 9(1), 32; https://doi.org/10.3390/cryst9010032 - 10 Jan 2019
Cited by 8 | Viewed by 5564
Abstract
Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The [...] Read more.
Single crystal diamonds were deposited on high pressure high temperature (HPHT) substrate with high growth rate, up to 18.5 μm/h, by using dual radio-frequency inductive coupled plasma jet. The methane flux was found to influence the growth rate of single crystal diamond. The reason for this might be ascribed to the electron temperature increase, raising the flux of methane, based on the plasma diagnosis results by optical emission spectra (OES). The results of Raman spectroscopy and the X-ray rocking-curve indicated that as-deposited diamonds are of good quality. Full article
(This article belongs to the Special Issue Synthesis and Characterization of Diamond Crystals)
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