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Electronics
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Nano-materials Based 3D Electronics
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Nano-materials Based 3D Electronics

A special issue of Electronics (ISSN 2079-9292).

Deadline for manuscript submissions: closed (31 August 2018) | Viewed by 12534

Special Issue Editor

Dr. Yifeng Fu

E-Mail Website
Guest Editor
Electronics Materials and Systems Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden
Interests: electronics packaging; thermal management; 3d integration; carbon nanotube; graphene

Special Issue Information

Dear Colleagues,

As Moore’s law is going to hit the wall imposed by quantum effects, the further miniaturization of microelectronic systems is expected to be driven by 3D heterogeneous integration. In order to realize high-density and high-performance integration in a 3D fashion, stacking chips in the vertical direction is a key step. To enable communication among stacked chips, new materials and semiconductor processes have to be developed. In this perspective, nano-materials have attracted a great deal of attention due to their special electrical, mechanical, thermal and chemical properties. In addition, high density integration of components in microsystems places the challenging-enough thermal management problem on fire. In this Special Issue of Electronics, we would like to report on the most recent progresses in 3D integration of microsystems. Contributions on all dimensions of 3D integration are welcome.

Dr. Yifeng Fu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 3D integration
  • nano-materials
  • interconnect
  • through silicon via
  • thermal management

Published Papers (2 papers)

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Research

13 pages, 4785 KiB  
Article
MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures
by Yue Bian, Yifan Gu, Xu Ding, Zhiyu Wang, Jiongjiong Mo and Faxin Yu
Electronics 2018, 7(9), 208; https://doi.org/10.3390/electronics7090208 - 19 Sep 2018
Cited by 1 | Viewed by 4180
Abstract
Nowadays, more and more MMICs (Microwave Monolithic Integrated Circuit), such as limiters and switches, are designed to have balanced and unbalanced test pad structures to solve the challenging size restrictions and integration requirements for MMICs. Hybrid balanced and unbalanced RF (Radio Frequency) probes [...] Read more.
Nowadays, more and more MMICs (Microwave Monolithic Integrated Circuit), such as limiters and switches, are designed to have balanced and unbalanced test pad structures to solve the challenging size restrictions and integration requirements for MMICs. Hybrid balanced and unbalanced RF (Radio Frequency) probes are adopted for an on-wafer test of the heteromorphy structures. The thru standard based on single balanced or unbalanced structures cannot meet the impedance matching requirements of the hybrid RF probes at the same time, which leads to a dramatic decreasing of the calibration accuracy and cannot satisfy the requirement of MMIC test. Therefore, in this paper, the calibration error estimating of hybrid RF probes based on traditional SOLR (Short Open Load Reciprocal) calibration method is performed, and an on-wafer test approach of MMIC based on hybrid balanced and unbalanced RF probes is proposed which combines the OSL (Open Short Load) second-order de-embedding technique with vector error correction and the matrix transformation technique. The calibration reference plane can be accurately shifted to the probe tip with this method, which greatly improves the test accuracy, and an automatic test system is built for this method based on the object-oriented C# language. Full article
(This article belongs to the Special Issue Nano-materials Based 3D Electronics)
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5253 KiB  
Article
A Nonlinear Drift Memristor Model with a Modified Biolek Window Function and Activation Threshold
by Valeri Mladenov and Stoyan Kirilov
Electronics 2017, 6(4), 77; https://doi.org/10.3390/electronics6040077 - 03 Oct 2017
Cited by 30 | Viewed by 8023
Abstract
The main idea of the present research is to propose a new memristor model with a highly nonlinear ionic drift suitable for computer simulations of titanium dioxide memristors for a large region of memristor voltages. For this purpose, a combination of the original [...] Read more.
The main idea of the present research is to propose a new memristor model with a highly nonlinear ionic drift suitable for computer simulations of titanium dioxide memristors for a large region of memristor voltages. For this purpose, a combination of the original Biolek window function and a weighted sinusoidal window function is applied. The new memristor model is based both on the Generalized Boundary Condition Memristor (GBCM) Model and on the Biolek model, but it has an improved property—an increased extent of nonlinearity of the ionic drift due to the additional weighted sinusoidal window function. The modified memristor model proposed here is compared with the Pickett memristor model, which is used here as a reference model. After that, the modified Biolek model is adjusted so that its basic relationships are made almost identical with these of the Pickett model. After several simulations of our new model, it is established that its behavior is similar to the realistic Pickett model but it operates without convergence problems and due to this, it is also appropriate for computer simulations. The modified memristor model proposed here is also compared with the Joglekar memristor model and several advantages of the new model are established. Full article
(This article belongs to the Special Issue Nano-materials Based 3D Electronics)
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