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Materials for Sources and Detectors in the GIGA-TERA-MIR Range
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Materials for Sources and Detectors in the GIGA-TERA-MIR Range

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Smart Materials".

Deadline for manuscript submissions: closed (31 December 2019) | Viewed by 15726

Special Issue Editor

Prof. Dr. Mauro Fernandes Pereira

E-Mail Website
Guest Editor
Physics Department, Khalifa University of Science and Technology, Abu Dhabi, United Arab Emirates
Interests: semiconductor materials and optics; gigahertz, terahertz, and mid-infrared radiation (GIGA-TERA-MIR); (NIR-IR); quantum cascade lasers; dilute semiconductors; nitride, bismide and antimonide-based lasers; methods, materials, and devices for sensitive gas detection, water quality control, and metabolomics; GHz-THz frequency multiplication and controllable GHz-THz nonlinearities in semiconductor superlattices; THz metamaterials, nanoparticles for medical physics applications; sensors for CBRN detection and water quality monitoring
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Recent advances in sources and detectors in the TERA-MIR field: THz (0.3 THz to 10 THz) and Mid Infrared (10 THz to 100 THz) have shown that there are a large number of applications in physics, electrical engineering and technology, applied chemistry, materials sciences and medicine/biology that would benefit from spectroscopy and imaging with frequencies in both ranges.  Even more recently, novel devices in the GIGA range from 0.1 THz to slightly below 0.3 THz, notably in medical diagnostics based on sensitive gas detection and imaging, make a review on materials, sources and detectors for the GIGA-TERA-MIR range timely to help identify common aspects within a synergetic approach.   The main emphasis of this Special Issue will be on new fundamental material properties, concepts and device designs that are likely to open the way for new products or the exploitation of new technologies in the fields of sensing, healthcare, biology, and industrial applications. End users are: Research centers, academic institutions, and well-established and start-up companies and hospitals.

Prof. Mauro Fernandes Pereira
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • TERA-MIR
  • GHz, THz, Mid infrared
  • Quantum Cascade Lasers and Interband Cascade Lasers
  • Dilute semiconductors
  • Frequency multiplication in superlattices
  • Breath Analysis
  • Sensitive Gas Detection

Published Papers (4 papers)

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Research

17 pages, 3215 KiB  
Article
Highly Selective CMOS-Compatible Mid-Infrared Thermal Emitter/Detector Slab Design Using Optical Tamm-States
by Gerald Pühringer and Bernhard Jakoby
Materials 2019, 12(6), 929; https://doi.org/10.3390/ma12060929 - 20 Mar 2019
Cited by 6 | Viewed by 2741
Abstract
In this work, we propose and evaluate a concept for a selective thermal emitter based on Tamm plasmons suitable for monolithic on-chip integration and fabrication by conventional complementary metal oxide semiconductor (CMOS)-compatible processes. The original design of Tamm plasmon structures features a purely [...] Read more.
In this work, we propose and evaluate a concept for a selective thermal emitter based on Tamm plasmons suitable for monolithic on-chip integration and fabrication by conventional complementary metal oxide semiconductor (CMOS)-compatible processes. The original design of Tamm plasmon structures features a purely one-dimensional array of layers including a Bragg mirror and a metal. The resonant field enhancement next to the metal interface corresponding to optical Tamm states leads to resonant emission at the target wavelength, which depends on the lateral dimensions of the bandgap structure. We demonstrate the application of this concept to a silicon slab structure instead of deploying extended one dimensional layers thus enabling coupling into slab waveguides. Here we focus on the mid-infrared region for absorption sensing applications, particularly on the CO2 absorption line at 4.26 µm as an example. The proposed genetic-algorithm optimization process utilizing the finite-element method and the transfer-matrix method reveals resonant absorption in case of incident modes guided by the slab and, by Kirchhoff’s law, corresponds to emittance up to 90% depending on different choices of the silicon slab height when the structure is used as a thermal emitter. Although we focus on the application as an emitter in the present work, the structure can also be operated as an absorber providing adjusted lateral dimensions and/or exchanged materials (e.g., a different choice for metal). Full article
(This article belongs to the Special Issue Materials for Sources and Detectors in the GIGA-TERA-MIR Range)
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13 pages, 2955 KiB  
Article
Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes
by Justinas Glemža, Vilius Palenskis, Andrejus Geižutis, Bronislovas Čechavičius, Renata Butkutė, Sandra Pralgauskaitė and Jonas Matukas
Materials 2019, 12(4), 673; https://doi.org/10.3390/ma12040673 - 24 Feb 2019
Cited by 7 | Viewed by 3157
Abstract
GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should [...] Read more.
GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified. A detailed study of near-infrared 1.09 μm wavelength GaAsBi type-I laser diodes using the low-frequency noise spectroscopy in a temperature range of (180–300) K is presented. Different types of voltage fluctuation spectral density dependencies on the forward current far below the lasing threshold have been observed. According to this, investigated samples have been classified into two groups and two equivalent noise circuits with the corresponding voltage noise sources are presented. Calculations on the voltage spectral density of the electrical noise and current-voltage characteristic approximations have been performed and the results are consistent with the experimental data. The analysis showed that one group of LDs is characterized by 1/fα-type electrical fluctuations with one steep electrical bump in the electrical noise dependence on forward current, and the origin of these fluctuations is the surface leakage channel. The LDs of the other group have two bumps in the electrical noise dependence on current where the first bump is determined by overall LD defectiveness and the second bump by Bi-related defects in the active area of LD with characteristic Lorentzian-type fluctuations having the activation energy of (0.16–0.18) eV. Full article
(This article belongs to the Special Issue Materials for Sources and Detectors in the GIGA-TERA-MIR Range)
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8 pages, 2190 KiB  
Article
An Ultra-Wideband THz/IR Metamaterial Absorber Based on Doped Silicon
by Huafeng Liu, Kai Luo, Shihao Tang, Danhua Peng, Fangjing Hu and Liangcheng Tu
Materials 2018, 11(12), 2590; https://doi.org/10.3390/ma11122590 - 19 Dec 2018
Cited by 20 | Viewed by 4361
Abstract
Metamaterial-based absorbers have been extensively investigated in the terahertz (THz) range with ever increasing performances. In this paper, we propose an all-dielectric THz absorber based on doped silicon. The unit cell consists of a silicon cross resonator with an internal cross-shaped air cavity. [...] Read more.
Metamaterial-based absorbers have been extensively investigated in the terahertz (THz) range with ever increasing performances. In this paper, we propose an all-dielectric THz absorber based on doped silicon. The unit cell consists of a silicon cross resonator with an internal cross-shaped air cavity. Numerical results suggest that the proposed absorber can operate from THz to far-infrared regimes, having an average power absorption of ∼95% between 0.6 and 10 THz. Experimental results using THz time-domain spectroscopy show a good agreement with simulations. The underlying mechanisms for broadband absorption are attributed to the combined effects of multiple cavities modes formed by silicon resonators and bulk absorption in the doped silicon substrate, as confirmed by simulated field patterns and calculated diffraction efficiency. This ultra-wideband absorption is polarization insensitive and can operate across a wide range of the incident angle. The proposed absorber can be readily integrated into silicon-based photonic platforms and used for sensing, imaging, energy harvesting and wireless communications applications in the THz/IR range. Full article
(This article belongs to the Special Issue Materials for Sources and Detectors in the GIGA-TERA-MIR Range)
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10 pages, 1678 KiB  
Article
Terahertz Spectroscopy of Amorphous WSe2 and MoSe2 Thin Films
by Gianpaolo Papari, Can Koral, Toby Hallam, Georg Stefan Duesberg and Antonello Andreone
Materials 2018, 11(9), 1613; https://doi.org/10.3390/ma11091613 - 04 Sep 2018
Cited by 8 | Viewed by 4997 | Correction
Abstract
Time domain spectroscopy is used to determine the THz electromagnetic response of amorphous transition metal dichalcogenides WSe2 and MoSe2 in thin-film form. The dielectric function is obtained using a rigorous transmission model to account for the large etalon effect. The Drude–Smith [...] Read more.
Time domain spectroscopy is used to determine the THz electromagnetic response of amorphous transition metal dichalcogenides WSe2 and MoSe2 in thin-film form. The dielectric function is obtained using a rigorous transmission model to account for the large etalon effect. The Drude–Smith model is applied to retrieve the dielectric function, and from there, the sample conductivity. Full article
(This article belongs to the Special Issue Materials for Sources and Detectors in the GIGA-TERA-MIR Range)
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