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Special Issue "Epitaxial Materials"

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A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (30 June 2012)

Special Issue Editor

Guest Editor
Dr. Giorgio Biasiol (Website)

AMD - Advanced Material and Devices group, CNR-IOM, TASC Laboratory Laboratory, S.S. 14, Km 163.5 in Area Science Park, 34149 Basovizza (Trieste), Italy
Fax: +39 040 226767
Interests: compound semiconductor thin films and nanostructures; crystal growth and epitaxy; kinetics of epitaxial growth; photoemission spectroscopy and microscopy; coherent transport

Special Issue Information

Dear Colleagues,

Epitaxial techniques were developed a few decades ago as convenient methods to synthesize monocrystalline films on monocrystalline substrates, with unpaired control over quality, purity, thickness and interface sharpness. Depending on the materials and the layer structure to be grown, epitaxy can be performed from the vapor, liquid or solid phases, or in the form of molecular beams in ultra-high vacuum. The materials originally grown were elemental and compound semiconductors, and these materials represent still today the most prominent application of epitaxial techniques. However, a wide range of novel epitaxial materials is nowadays synthesized, including oxides, magnetic materials, superconductors, metals, and organics. Materials grown through such techniques have become common constituents of devices we use in everyday life, in fields ranging from nano and optoelectronics, to photonics, ICT, energy production, sensing, biological and environmental applications. Besides, special modifications of epitaxial techniques allow the synthesis of low-dimensional structures, such as quantum dots, nanowires, carbon nanotubes and epitaxial graphene. In this special issue we address recent progress and new directions in the synthesis of traditional and novel materials, including low-dimensional structures, by means of the above mentioned epitaxial techniques.

Dr. Giorgio Biasiol
Guest Editor

Keywords

  • epitaxial materials
  • epitaxial nanostructures
  • molecular beam epitaxy (MBE)
  • liquid phase epitaxy (LPE)
  • vapor phase epitaxy (VPE)
  • metalorganic vapor phase epitaxy (MOVPE, MOCVD)
  • solid phase epitaxy (SPE)
  • semiconductors
  • magnetic materials
  • oxides
  • superconductors
  • organic semiconductors

Published Papers (3 papers)

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Research

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Open AccessArticle Deposition of Metal-Organic Frameworks by Liquid-Phase Epitaxy: The Influence of Substrate Functional Group Density on Film Orientation
Materials 2012, 5(9), 1581-1592; doi:10.3390/ma5091581
Received: 11 July 2012 / Revised: 27 August 2012 / Accepted: 28 August 2012 / Published: 5 September 2012
Cited by 19 | PDF Full-text (302 KB) | HTML Full-text | XML Full-text
Abstract
The liquid phase epitaxy (LPE) of the metal-organic framework (MOF) HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs) on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA), 4’-carboxyterphenyl-4-methanethiol (TPMTA) [...] Read more.
The liquid phase epitaxy (LPE) of the metal-organic framework (MOF) HKUST-1 has been studied for three different COOH-terminated templating organic surfaces prepared by the adsorption of self-assembled monolayers (SAMs) on gold substrates. Three different SAMs were used, mercaptohexadecanoic acid (MHDA), 4’-carboxyterphenyl-4-methanethiol (TPMTA) and 9-carboxy-10-(mercaptomethyl)triptycene (CMMT). The XRD data demonstrate that highly oriented HKUST-1 SURMOFs with an orientation along the (100) direction was obtained on MHDA-SAMs. In the case of the TPMTA-SAM, the quality of the deposited SURMOF films was found to be substantially inferior. Surprisingly, for the CMMT-SAMs, a different growth direction was obtained; XRD data reveal the deposition of highly oriented HKUST-1 SURMOFs grown along the (111) direction. Full article
(This article belongs to the Special Issue Epitaxial Materials)
Open AccessArticle Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes
Materials 2011, 4(12), 2092-2107; doi:10.3390/ma4122092
Received: 6 October 2011 / Revised: 14 November 2011 / Accepted: 24 November 2011 / Published: 6 December 2011
Cited by 5 | PDF Full-text (1133 KB) | HTML Full-text | XML Full-text
Abstract
An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm [...] Read more.
An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm−3, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentration, first an As-doped Si seed layer is grown with a concentration of 1016 to 1017 cm−3, after which the dopant gas arsine is turned off and a thick lightly-doped epi-layer is deposited. The final doping in the thick epi-layer relies on the segregation and incorporation of As from the seed layer, and it also depends on the final thickness of the layer, and the exact growth cycles. The obtained epi-layers exhibit a low density of stacking faults, an over-the-wafer doping uniformity of 3.6%, and a lifetime of generated carriers of more than 2.5 ms. Furthermore, the implementation of a segmented photodiode electron detector is demonstrated, featuring a 30 pF capacitance and a 90 Ω series resistance for a 7.6 mm2 anode area. Full article
(This article belongs to the Special Issue Epitaxial Materials)

Review

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Open AccessReview InN Nanowires: Growth and Optoelectronic Properties
Materials 2012, 5(11), 2137-2150; doi:10.3390/ma5112137
Received: 10 September 2012 / Revised: 12 October 2012 / Accepted: 23 October 2012 / Published: 31 October 2012
Cited by 10 | PDF Full-text (612 KB) | HTML Full-text | XML Full-text
Abstract
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the [...] Read more.
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed. Full article
(This article belongs to the Special Issue Epitaxial Materials)

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