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Molecules
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Organic Memory Devices
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Organic Memory Devices

A special issue of Molecules (ISSN 1420-3049). This special issue belongs to the section "Molecular Diversity".

Deadline for manuscript submissions: closed (31 August 2016)

Special Issue Editor

Prof. Dr. Jianyong Ouyang

E-Mail Website
Guest Editor
Department of Materials Science & Engineering, National University of Singapore, 7 Engineering Drive 1, Singapore, Singapore
Interests: conductive and semicondutive polymers and organic molecules; organic memory devices; perovskite solar cells; organic solar cells; stretchable electronics; nanoelectronics

Special Issue Information

Dear Colleagues,

Memory devices with organic or organic/nano hybrid materials have many unique advantages, such as low fabrication cost and high mechanical flexibility. They are regarded as next-generation memory devices. Great progress has been made in the development and understanding of organic memory devices. This Special Issue aims to provide a forum for the dissemination of the latest information on the materials, device fabrication, and mechanism of organic memory devices.

Prof. Dr. Jianyong Ouyang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Molecules is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Resistive switching
  • Current hysterisis
  • Charge transfer
  • Electron donor and acceptor

Published Papers (1 paper)

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Research

3432 KiB  
Article
Single-Walled Carbon-Nanotubes-Based Organic Memory Structures
by Sundes Fakher, Razan Nejm, Ahmad Ayesh, Amal AL-Ghaferi, Dagou Zeze and Mohammed Mabrook
Molecules 2016, 21(9), 1166; https://doi.org/10.3390/molecules21091166 - 02 Sep 2016
Cited by 9 | Viewed by 5741
Abstract
The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and [...] Read more.
The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance–voltage (C–V) for MIS structures, as well as output and transfer characteristics for transistors). Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states. Full article
(This article belongs to the Special Issue Organic Memory Devices)
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