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Field-Effect Transistors for Chemical Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Chemical Sensors".

Deadline for manuscript submissions: closed (31 December 2019) | Viewed by 2525

Special Issue Editor

Department of Electronics Engineering, Chang Gung University, Taoyuan City 33302, Taiwan
Interests: sensitive membranes; ferroelectric materials; ion-sensitive field-effect transistors (ISFETs); extended-gate ield-effect transistors (EGFETs); thin-film transistors (TFTs); biosensors
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Special Issue Information

Dear Colleagues,

Recently, intensive research has been developed in the field-effect transistors (FETs) with superior sensing performance (i.e., sensitivity, selectivity and stability). Nanowires, nanoribbons, nanotubes, nanorods, monolayers, and hierarchical nanomaterials have been synthesized by a wide variety of techniques, including solution synthesis, smart anodization, spray pyrolysis, or chemical vapor deposition, for FET-based chemical sensor applications. The integration of these nanomaterials onto different FET devices for obtaining chemical sensors has been the subject of many studies, in which yield, reproducibility, reliability, and long-term stability have been addressed for chemical analysis and measurement, clinical diagnosis, industrial wastewater measurement, and environmental pollution monitoring. This Special Issue of Sensors will be dedicated to highlight the emerging technologies of FET-based chemical sensors and their applications, and aims at presenting the latest technologies and methodologies developed in this interdisciplinary field of science. Full papers, communications and reviews are welcome. Topics include, but are not limited to, the following:

  • Synthesis, functionalization and chemical sensing properties of FET-based chemical sensors (including single-crystalline, polycrystalline, nanostructured metal oxides).
  • Synthesis, functionalization and chemical sensing properties of carbon FET-based chemical sensors (including carbon nanofibers, carbon nanotubes and graphene or graphene-like nanomaterials.
  • Synthesis and chemical sensing properties of hierarchical FET-based chemical sensors.
  • Chemical sensing devices employing silicon or other semiconductor nanowires.
  • Chemical sensing devices employing organic nanomaterials
  • New applications of chemical sensors
Dr. Tung-Ming Pan
Guest Editor

Manuscript Submission Information

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Keywords

  • Field-Effect Transistors (FETs)
  • Chemical Sensors

Published Papers (1 paper)

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Research

13 pages, 2102 KiB  
Article
Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta2O5-SiO2-Si Structure During Long-Term Operation
by Boris Podlepetsky, Nikolay Samotaev, Marina Nikiforova and Andrew Kovalenko
Sensors 2019, 19(8), 1855; https://doi.org/10.3390/s19081855 - 18 Apr 2019
Cited by 5 | Viewed by 2179
Abstract
We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta2O5-SiO2-Si. The n-channel MISFET elements were fabricated on silicon single chips together with temperature sensors [...] Read more.
We present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta2O5-SiO2-Si. The n-channel MISFET elements were fabricated on silicon single chips together with temperature sensors and heater-resistors by means of conventional -technology. Two hundred cycles of responses to different hydrogen concentrations were measured during eight weeks using special measuring and temperature stabilization circuitries with a feedback loop based on the chip’s thermo-sensor and heater. We show how the response parameters change during long-term tests of sensors under repeated hydrogen impacts. There were two stages of time-dependent response instability, the degradation of which depends on operating conditions, hydrogen concentrations, and time. To interpret results, we proposed the models, parameters of which were calculated using experimental data. These models can be used to predict performances of MISFET-based gas analysis devices for long-term operation. Full article
(This article belongs to the Special Issue Field-Effect Transistors for Chemical Sensors)
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