Annealing Effect on the Characteristics of Co40Fe40W10B10 Thin Films on Si(100) Substrate
Abstract
:1. Introduction
2. Materials and Methods
3. Results
3.1. X-ray Diffraction
3.2. Full-Width at Half Maximum (FWHM) and Grain Size Distribution
3.3. Magnetic Analysis
3.4. Contact Angle and Surface Energy
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Thickness (nm) | After Annealing at 200 °C (Hz) | After Annealing at 250 °C (Hz) | After Annealing at 300 °C (Hz) | After Annealing at 350 °C (Hz) |
---|---|---|---|---|
10 | 500 | 250 | 500 | 250 |
20 | 500 | 250 | 100 | 250 |
30 | 100 | 500 | 200 | 250 |
40 | 50 | 50 | 100 | 50 |
50 | 50 | 250 | 250 | 500 |
60 | 250 | 500 | 100 | 100 |
70 | 250 | 1000 | 250 | 250 |
80 | 250 | 50 | 250 | 50 |
90 | 250 | 100 | 500 | 250 |
100 | 250 | 50 | 250 | 250 |
Process | Thickness | Contact Angle with DI Water (θ) | Contact Angle with Glycerol (θ) | Surface Energy (mJ/mm2) |
---|---|---|---|---|
Post-annealing 200 °C | 10 nm | 90.0° | 73.2° | 22.87 |
20 nm | 80.7° | 65.7° | 24.50 | |
30 nm | 85.8° | 81.4° | 21.31 | |
40 nm | 84.3° | 72.6° | 27.09 | |
50 nm | 80.5° | 71.5° | 28.15 | |
Post-annealing 200 °C | 60 nm | 83.7° | 79.4° | 22.69 |
70 nm | 84.9° | 84.0° | 22.43 | |
80 nm | 87.4° | 81.7° | 23.77 | |
90 nm | 87.4° | 83.0° | 21.02 | |
100 nm | 84.4° | 72.7° | 27.13 | |
Post-annealing 250 °C | 10 nm | 82.5° | 80.7° | 26.77 |
20 nm | 85.6° | 76.0° | 25.69 | |
30 nm | 86.5° | 83.2° | 26.01 | |
40 nm | 80.7° | 80.0° | 24.75 | |
50 nm | 84.2° | 61.9° | 28.49 | |
Post-annealing 250 °C | 60 nm | 80.3° | 77.3° | 31.01 |
70 nm | 73.7° | 70.0° | 29.84 | |
80 nm | 80.0° | 71.4° | 29.35 | |
90 nm | 75.5° | 70.6° | 29.30 | |
100 nm | 77.2° | 75.2° | 29.19 | |
Post-annealing 300 °C | 10 nm | 82.2° | 78.0° | 26.49 |
20 nm | 77.2° | 77.2° | 27.62 | |
30 nm | 80.5° | 51.0° | 26.68 | |
40 nm | 77.8° | 74.9° | 28.90 | |
50 nm | 83.4° | 81.9° | 27.61 | |
Post-annealing 300 °C | 60 nm | 80.8° | 78.2° | 31.18 |
70 nm | 79.6° | 65.9° | 37.93 | |
80 nm | 76.5° | 72.4° | 35.24 | |
90 nm | 77.7° | 76.6° | 43.26 | |
100 nm | 83.7° | 73.0° | 50.56 | |
Post-annealing 350 °C | 10 nm | 78.3° | 73.6° | 27.60 |
20 nm | 75.6° | 75.4° | 28.85 | |
30 nm | 76.9° | 71.7° | 29.61 | |
40 nm | 71.6° | 68.5° | 31.48 | |
50 nm | 81.1° | 79.6° | 35.24 | |
Post-annealing 350 °C | 60 nm | 80.0° | 78.0° | 41.06 |
70 nm | 80.9° | 77.2° | 47.79 | |
80 nm | 81.8° | 79.7° | 51.65 | |
90 nm | 80.7° | 73.9° | 49.08 | |
100 nm | 81.7° | 75.6° | 54.95 |
Material | Maximum χac (a.u.) | Optimal Resonance Frequency, fres (Hz) | Surface Energy (mJ/mm2) | Crystallinity |
---|---|---|---|---|
Si(100)/Co40Fe40V10B10 [34] 10–50 nm at RT | 0.013–0.019 | 50–200 | 34.2–51.5 | Weak |
Si(100)/Co40Fe40W10B10 [*] 10–100 nm at annealed conditions[*]: Current research | 0.24–1.17 | 50–1000 | 21.0–54.9 | Strong |
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Liu, W.-J.; Chang, Y.-H.; Chen, Y.-T.; Chang, C.-Y.; Lai, J.-X.; Lin, S.-H.; Wu, T.-H.; Chi, P.-W. Annealing Effect on the Characteristics of Co40Fe40W10B10 Thin Films on Si(100) Substrate. Materials 2021, 14, 6017. https://doi.org/10.3390/ma14206017
Liu W-J, Chang Y-H, Chen Y-T, Chang C-Y, Lai J-X, Lin S-H, Wu T-H, Chi P-W. Annealing Effect on the Characteristics of Co40Fe40W10B10 Thin Films on Si(100) Substrate. Materials. 2021; 14(20):6017. https://doi.org/10.3390/ma14206017
Chicago/Turabian StyleLiu, Wen-Jen, Yung-Huang Chang, Yuan-Tsung Chen, Chun-Yu Chang, Jian-Xin Lai, Shih-Hung Lin, Te-Ho Wu, and Po-Wei Chi. 2021. "Annealing Effect on the Characteristics of Co40Fe40W10B10 Thin Films on Si(100) Substrate" Materials 14, no. 20: 6017. https://doi.org/10.3390/ma14206017