Recent Advances in Thermoelectric Performance of Half-Heusler Compounds
Abstract
:1. Introduction
2. Results and Discussion
2.1. High Dimensionless Figures of Merit (zT) in Half-Heusler Compounds
2.2. Power-Conversion Efficiency of TE Modules Based on HH Compounds
2.3. Mitigation of Lattice Strain to Enhance zT
2.4. Formation of Resonant Dopant States to Enhance zT
3. Conclusions
Funding
Acknowledgments
Conflicts of Interest
References
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N Type HH Compounds | ||||
Compounds | zT (K) | Enabling factors | Effects | References |
Ti0.5Zr0.25Hf0.25NiSn | 1.2 (830 K) | Phase separation | Lower k | [10] |
Hf0.6Zr0.4NiSn0.995Sb0.005 | 1.2 (860 K) | Strain reduction | Higher ρ and S, lower k | [11] |
Hf0.65Zr0.25Ti0.15 NiSn0.995Sb0.005 | 1.3 (830 K) | Embedded nano-oxide | Higher ρ and S, lower k | [12] |
Hf0.594Zr0.396V0.01NiSn0.995Sb0.005 | 1.3 (900 K) | Dopant resonant states | Higher ρ and S, lower k | [13] |
Ti0.5Zr0.5NiSn0.98Sb0.02 Ti0.5Zr0.25Hf0.25NiSn0.98Sb0.02 | ~1.2 (820 K) | Presence of nanograin | Higher ρ and S, lower k | [14] |
Ti0.5Zr0.25Hf0.25NiSn | 1.5 (820 K) | Similar to Reference [14] | Higher S, lower ρ and k | [15] |
P-Type HH Compounds | ||||
FeNb0.88Hf0.12Sb FeNb0.86Hf0.14Sb | 1.5 (1200 K) | Heavy hole band, high dopant content, heavy atomic mass | Lower ρ, low k Retain high S | [16] |
ZrCoBi0.65Sb0.15Sn0.20 | ~1.4 (970 K) | High band degeneracy, high dopant content, heavy atomic mass | Lower ρ, low k Retain high S | [17] |
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Poon, S.J. Recent Advances in Thermoelectric Performance of Half-Heusler Compounds. Metals 2018, 8, 989. https://doi.org/10.3390/met8120989
Poon SJ. Recent Advances in Thermoelectric Performance of Half-Heusler Compounds. Metals. 2018; 8(12):989. https://doi.org/10.3390/met8120989
Chicago/Turabian StylePoon, S. Joseph. 2018. "Recent Advances in Thermoelectric Performance of Half-Heusler Compounds" Metals 8, no. 12: 989. https://doi.org/10.3390/met8120989