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Journal: Nanomaterials, 2022
Volume: 12
Number: 3712

Article: Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET)
Authors: by Chong-Jhe Sun, Chen-Han Wu, Yi-Ju Yao, Shan-Wen Lin, Siao-Cheng Yan, Yi-Wen Lin and Yung-Chun Wu
Link: https://www.mdpi.com/2079-4991/12/20/3712

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