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Journal: Nanomaterials, 2025
Volume: 15
Number: 1469

Article: Highly Selective Isotropic Etching of Si to SiGe Using CF4/O2/N2 Plasma for Advanced GAA Nanosheet Transistor
Authors: by Jiayang Li, Xin Sun, Ziqiang Huang and David Wei Zhang
Link: https://www.mdpi.com/2079-4991/15/19/1469

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