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Journal: Electronics, 2024
Volume: 13
Number: 3428
Article:
Study on Novel Schottky Contact Super Barrier Rectifier with Deep Isolated MOS Trench in Epitaxial N-Drift Layer
Authors:
by
Kunfeng Zhu, Wensuo Chen, Jiaweiwen Huang, Qisheng Yu and Jian Li
Link:
https://www.mdpi.com/2079-9292/13/17/3428
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