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Journal: Electronics, 2024
Volume: 13
Number: 3428

Article: Study on Novel Schottky Contact Super Barrier Rectifier with Deep Isolated MOS Trench in Epitaxial N-Drift Layer
Authors: by Kunfeng Zhu, Wensuo Chen, Jiaweiwen Huang, Qisheng Yu and Jian Li
Link: https://www.mdpi.com/2079-9292/13/17/3428

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