Wake-Up and Imprint Effects in Hafnium Oxide-Based Ferroelectric Capacitors during Cycling with Different Interval Times
Abstract
:1. Introduction
2. Device Processing and Characterization Method
3. Results
3.1. Imprint Caused by Depolarization Filed
3.2. Wake-Up Mechanism Analysis
4. Discussion
5. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Ding, Y.; Weng, Z.; Lan, Z.; Yan, C.; Cai, D.; Qu, Y.; Zhao, Y. Wake-Up and Imprint Effects in Hafnium Oxide-Based Ferroelectric Capacitors during Cycling with Different Interval Times. Electronics 2024, 13, 1021. https://doi.org/10.3390/electronics13061021
Ding Y, Weng Z, Lan Z, Yan C, Cai D, Qu Y, Zhao Y. Wake-Up and Imprint Effects in Hafnium Oxide-Based Ferroelectric Capacitors during Cycling with Different Interval Times. Electronics. 2024; 13(6):1021. https://doi.org/10.3390/electronics13061021
Chicago/Turabian StyleDing, Yaru, Zeping Weng, Zhangsheng Lan, Chu Yan, Daolin Cai, Yiming Qu, and Yi Zhao. 2024. "Wake-Up and Imprint Effects in Hafnium Oxide-Based Ferroelectric Capacitors during Cycling with Different Interval Times" Electronics 13, no. 6: 1021. https://doi.org/10.3390/electronics13061021