Reprint
Recent Advances in Thin Film Electronic Devices
Edited by
October 2022
152 pages
- ISBN978-3-0365-5294-1 (Hardback)
- ISBN978-3-0365-5293-4 (PDF)
This is a Reprint of the Special Issue Recent Advances in Thin Film Electronic Devices that was published in
Chemistry & Materials Science
Engineering
Physical Sciences
Summary
This reprint is a collection of the papers from the Special Issue “Recent Advances in Thin Film Electronic Devices” in Micromachines. In this reprrint, 1 editorial and 11 original papers about recent advances in the research and development of thin film electronic devices are included. Specifically, three research fields are covered: device fundamentals (5 papers), fabrication processes (5 papers), and testing methods (1 paper). The experimental data, simulation results, and theoretical analysis presented in this reprint should benefit those researchers in flat panel displays, flat panel sensors, energy devices, memories, and so on.
Format
- Hardback
License and Copyright
© 2022 by the authors; CC BY-NC-ND license
Keywords
solution method; laser treatment; active layer; metal oxide semiconductor thin film transistor; amorphous InGaZnO (a-IGZO); thin-film transistor (TFT); positive bias stress (PBS); annealing atmosphere; oxygen vacancy; foreign material; laser sensor; area charge-coupled device; color filter; thin-film transistor; annealing; dielectric; gate-all-around (GAA); hot-carrier injection (HCI); power consumption; punch-through; reliability; logic transistors; artificial synapse; long-term synaptic plasticity; short-term synaptic plasticity; halide perovskite; flexible electronics; wrinkling; shape-memory polymer; lift-off; hybrid structure; multilayer conductive films; wearable electronics; band-to-band tunneling; epitaxial growth; ground plane region; gate-all-around field-effect-transistors (GAA FETs); nanosheet FETs (NS FETs); parasitic channel leakage; punch-through; a-IGZO TFTs; sub-gap states; nitrogen-doping; numerical simulation; stability; zinc oxide films; solution-processing electronics; Schottky barrier diodes; semiconductor defects; polarization filter; photonic crystal fiber; surface plasmon resonance; plasmonic sensor; silver; electrodeposition; ITO; morphology; thin films; TiO2; n/a