Reprint

Radiation Effects of Advanced Electronic Devices and Circuits

Edited by
June 2024
252 pages
  • ISBN978-3-7258-1481-7 (Hardback)
  • ISBN978-3-7258-1482-4 (PDF)

This is a Reprint of the Special Issue Radiation Effects of Advanced Electronic Devices and Circuits that was published in

Computer Science & Mathematics
Engineering
Summary

As integrated circuit technologies continue to scale down and electronic devices become more complex, their susceptibility to ionizing radiation has introduced numerous exciting challenges, anticipated to drive research over the next decade. Consequently, new solutions are necessary to mitigate radiation sensitivity in advanced devices and integrated circuits. The aim of this reprint is to disclose the basic mechanisms of radiation effects for advanced devices and the breakthrough of new solutions to assess and mitigate radiation sensitivity in advanced devices and integrated circuits. This reprint presents new modeling approaches that predict how radiation impacts electronic devices and circuits. Accurate models are essential for designing devices that can tolerate radiation without significant performance degradation. We also focus on the innovative design and fabrication techniques that enhance the radiation tolerance of integrated circuits. Moreover, some discussions highlight new testing protocols and methodologies that provide more accurate and comprehensive evaluations of radiation hardness, as well as the latest advancements and trends that are of particular interest to researchers and professionals in the radiation effects community. Overall, this issue offers valuable insights into the challenges and opportunities in this rapidly evolving field, highlighting the critical importance of continued innovation and collaboration to address the complex problems posed by radiation in modern electronics.

Format
  • Hardback
License and Copyright
© 2024 by the authors; CC BY-NC-ND license
Keywords
single event upset (SEU); total ionizing dose (TID); silicon-on-insulator (SOI); synergistic effect; radiation-hardened by design (RHBD); CMOS devices; single event latch-up (SEL); single event effect (SEE); resistor; pulsed laser; SiGe HBT; Geant4; TCAD simulation; single event transient; cryogenic temperature; carbon nanotube field effect transistor; total ionizing dose; radiation effect; trapped charge; SiGe heterojunction bipolar transistor; single event effect; single event transient; charge collection; TCAD simulation; VDMOS; total ionizing dose (TID); variability; oxide trapped charges; interface traps; CMOS image sensor; star sensor; hot pixel; single-event transient; star map recognition algorithm; spallation neutron; thermal neutron; Monte Carlo; system on chip; single event effect; split-gate-enhanced VDMOSFET; planar gate VDMOSFET; total ionizing dose effect; long-term reliability; CMOS image sensor; TID; radiation effects; camera resolution; single event effects; CMOS image sensor; transient bright spot; single event upset; SiC MOSFET; heavy-ion irradiation; oxide reliability; TCAD; high-dose-rate transient ionizing effect; FDSOI; TCAD simulation; supply voltage; Monte-Carlo method; total ionizing dose; radiation shielding; space radiation; reliability; SOI; MOSFET; radiation; HCI; SiC MOSFET; single-event effect; single-event gate rupture; leakage current; heavy ion irradiation; machine learning; single event transient; soft error rate; transient pulse propagation; relay protection device; Monte Carlo; fault injection; single event effect; soft error; CMOS SPAD; proton radiation; DCR; displacement damage; n/a

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