Reprint
Wide Bandgap Semiconductor Based Micro/Nano Devices
Edited by
April 2019
138 pages
- ISBN978-3-03897-842-8 (Paperback)
- ISBN978-3-03897-843-5 (PDF)
This book is a reprint of the Special Issue Wide Bandgap Semiconductor Based Micro/Nano Devices that was published in
Chemistry & Materials Science
Engineering
Physical Sciences
Summary
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
Format
- Paperback
License
© 2019 by the authors; CC BY-NC-ND license
Keywords
optical band gap; tungsten trioxide film; annealing temperature; electrochromism; AlGaN/GaN HEMT; DIBL effect; channel length modulation; power amplifier; W band; high electron mobility transistors; high electron mobility transistor (HEMT); AlGaN/GaN; ohmic contact; regrown contact; ammonothermal GaN; power amplifier; I–V kink effect; AlGaN/GaN HEMT; large signal performance; 4H-SiC; MESFET; ultrahigh upper gate height; power added efficiency; harsh environment; space application; 1T DRAM; wide-bandgap semiconductor; high-temperature operation; TCAD; amorphous InGaZnO (a-IGZO); thin-film transistor (TFT); positive gate bias stress (PGBS); passivation layer; characteristic length; edge termination; silicon carbide (SiC); junction termination extension (JTE); breakdown voltage (BV); Ku-band; GaN high electron mobility transistor (HEMT); power amplifier; asymmetric power combining; amplitude balance; phase balance; micron-sized patterned sapphire substrate; growth of GaN; sidewall GaN; flip-chip light-emitting diodes; distributed Bragg reflector; light output power; external quantum efficiency; threshold voltage (Vth) stability; gallium nitride (GaN); high electron mobility transistors (HEMTs); analytical model; high-temperature operation; T-anode; GaN; buffer layer; anode field plate (AFP); cathode field plate (CFP); n/a