**6. Conclusions**

The proposed intelligent control method has good EMI suppression for voltage and current compared with the classical gate driving method, the hard switching method. It has been proved that the intelligent control method can shape the SiC MOSFET switching transition effectively. Compared with the common method, it achieves control of drain-source voltage and drain current simultaneously. This method requires a precise fit of the voltage control signal and the current control signal so that a high frequency signal generator is needed. However, the proposed method needs longer switching time than classic driver so that the proposed method causes more power loss. Therefore, it is needed to tradeo ff the EMI and switching loss. According to [20], it is an e ffective way to adjust the rise and fall switching time to reduce switching loss. Control signals can be obtained by convolution calculations and generated by high frequency multi-channel arbitrary signal generators. However, there are certain limitations, for example, voltage and current oscillations during circuit switching. The future work is to study the finite time stability of the circuit when two circuits work at the same time.

**Author Contributions:** Conceptualization, C.X. and Q.M.; Methodology, C.X.; Validation, C.X., Q.M., P.X. and C.T.; Investigation, C.X.; Writing—original draft preparation, C.X.; Writing—review and editing, C.X., Q.M., P.X. and C.T.

**Funding:** This research received no external funding.

**Acknowledgments:** The authors would like to thank Beihang University, Beijing, China for the financial support in executing this work successfully. This work has been carried out as a part of research work in the School of Automation Science and Electrical Engineering, Beihang University, Beijing, China.

**Conflicts of Interest:** The authors declare no conflict of interest.
