**6. Patents**

Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer, US 9,515,211 B2 (2016).

**Author Contributions:** Investigation, K.C.M., J.W.K., and S.K.C.; Supervision, K.C.M., Writing—Original draft, K.C.M., S.K.C., and J.W.K.; Writing—Review and editing, K.C.M., and S.K.C. All authors have read and agreed to the published version of the manuscript.

**Funding:** This work was partly supported by the DOE O ffice of Nuclear Energy's Nuclear Energy University Program (NEUP), Grant No. DE-AC07-051D14517, DE-NE0008662, and by Los Alamos National Laboratory/DOE (Grant #143479). The work was also supported in part by the Advanced Support Program for Innovative Research Excellence-I (ASPIRE-I) of the University of South Carolina (UofSC), Columbia, Grant No. 15530-E404.

**Conflicts of Interest:** The authors declare no conflicts of interest. The funding sponsors had no role in the design of the study; in the collection, analyses, or interpretation of data; in the writing of the manuscript, and in the decision to publish the results.
