**5. Conclusions**

To meet high requirements for industrial applications like the electric vehicle, electric aircraft, deep-earth oil and gas exploration, and geothermal energy development, developing the high-temperature power electronics with a significant increase of power density, e fficiency, and reliability is indispensable. Compared with conventional Si power electronic devices, SiC power electronic devices have many advantages, including improved converter performance, reduced volume and weight, and simplified heat dissipation structure. This paper presented an overview of the development of high-temperature component profiles. It indicated that the advanced materials and technologies are vital for the performance promotion of high-temperature converters. Three typical application examples of SiC high-temperature converters and MEMS devices have been studied, which show the application status in several fields and uncover the main existing issues. Although many researchers are currently focusing on high-temperature packaging and integration technologies, high-temperature power electronics with SiC devices appear promising for reliable operation in a wide temperature range. Indeed, the performance of SiC converters and MEMS devices can be further enhanced when the high-temperature packaging and gate drive progress, and when the measurement and parameter matching problems are well resolved.

**Author Contributions:** X.G. investigated high-temperature power electronic applications, and high-temperature components, Q.X. conducted the literature reviews on chanllenges to develop high-temperature electronics, and proofread the manuscript. Z.L. collected data and references about high temperature converters, and S.D. conducted the literature reviews on high temperature MEMS devices.

**Funding:** This work was supported by the National Natural Science Foundation of China under gran<sup>t</sup> No. 61573136, and Zhejiang Science and Technology Project under gran<sup>t</sup> No. LGG18F030009 and No. 2016C31115.

**Acknowledgments:** Thanks to Dr. Changfu Zou for proofreading the manuscript.

**Conflicts of Interest:** The authors declare no conflict of interest.
