**3. Transistor Model and Parameter Extraction Methodology**

In the last decades, a noticeable e ffort has been made to develop models for SiC MOSFETs, a review of them being o ffered in [10]. Here we propose a slightly modified version of the behavioral model presented in [7,9] and used for ET simulations in [7,9,11]. Such a model, unlike those hitherto described in the literature, concurrently enjoys the following benefits: (i) it is simple, ye<sup>t</sup> accurate enough, with a few parameters easy to extract; (ii) it can be implemented with a subcircuit compatible with *any* SPICE-like program; (iii) it includes all the key physical parameters and their specific temperature dependence up to very high temperatures; (iv) it also accounts for avalanche e ffects due to impact ionization (II); (v) the nonlinear nature of the intrinsic capacitances can be activated.
