**5. Conclusions**

The investigation proves that if the temperatures are measured both inside the microprocessor structure and outside of it, e.g., at the cooling fin, the difference between the temperatures gives very useful information. It means that it is possible to increase the power dissipation in the mentioned periods

of time without the temperature rising over assumed limit. As a consequence, the microprocessor's throughput increases. Some examples carried out by the authors show that it is possible to improve the throughput even by 7% without any changes in the semiconductor structure, as has been published recently.

However, it has been clearly demonstrated in this paper that it is necessary to put the temperature-sensing device inside the heat source. As soon as the sensor is located at a certain distance, serious errors occur if one wants to measure the transient temperature behaviour. Regarding the steady-state temperature, a simple correction factor can be used, but for a transient problem, the inevitable delay cannot be adjusted by a simple correction factor.

**Author Contributions:** The conceptualization, formal analysis and methodology presented in this manuscript and their evaluation were carried out by all authors G.D.M. and A.K. The funding acquisition of the financial support for the project leading to this publication was made by A.K. All authors have read and agreed to the published version of the manuscript.

**Funding:** The research was supported financially from the AGH University of Science and Technology, Krakow, Poland subvention no. 16.16.230.434. The authors also want to express thanks to P. Fluder for his valuable contributions to the experimental measurements.

**Conflicts of Interest:** The authors declare no conflict of interest.
