**SiC-MOSFET and Si-IGBT-Based dc-dc Interleaved Converters for EV Chargers: Approach for Efficiency Comparison with Minimum Switching Losses Based on Complete Parasitic Modeling**

**Jelena Loncarski 1,2,\*,†, Vito Giuseppe Monopoli 1,† and Giuseppe Leonardo Cascella 1,† and Francesco Cupertino 1,†**


Received: 5 August 2020; Accepted: 27 August 2020; Published: 3 September 2020

**Abstract:** Widespread dissemination of electric mobility is highly dependent on the power converters, storage systems and renewable energy sources. The efficiency and reliability, combined with the emerging and innovative technologies, are crucial when speaking of power converters. In this paper the interleaved dc–dc topology has been considered for EV charging, due to its improved reliability. The efficiency comparison of the SiC-MOSFET and Si-IGBT-based converters has been done on wide range of switching frequency and output inductances. The interleaved converters were considered with the optimal switching parameters resulting from the analysis done on a detailed parasitic circuit model, ensuring minimum losses and maintaining the safe operating area. The analysis included the comparison of different inductors, and for the selected ones the complete system efficiency and cost were conducted. The results indicate the benefits when SiC-MOSFETs are applied to the interleaved dc–dc topology for wide ranges of output inductances and switching frequencies, and most importantly, they offer lower total volume but also total cost. The realistic and dynamic models of power devices obtained from the manufacturer's experimental tests have been considered in both LTspice and PLECS simulation tools.

**Keywords:** electric vehicle (EV); fast charging; interleaved dc–dc converter, SiC devices; Si devices
