*Article* **Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers**

#### **Ying Zhang, Haiting Xie and Chengyuan Dong \***

Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; Zhangying0036@sjtu.edu.cn (Y.Z.); haitingx@163.com (H.X.)

**\*** Correspondence: cydong@sjtu.edu.cn; Tel.: +86-021-3420-8271

Received: 17 October 2019; Accepted: 11 November 2019; Published: 14 November 2019

**Abstract:** To improve the electrical performance and bias-stress stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs), we fabricated and characterized buried-channel devices with multiple-stacked channel layers, i.e., a nitrogen-doped a-IGZO film (front-channel layer), a conventional a-IGZO film (buried-channel layer), and a nitrogen-doped a-IGZO film (back-channel layer). The larger field-e ffect mobility (5.8 cm2V−1s−1), the smaller subthreshold swing value (0.8 V/dec, and the better stability (smaller threshold voltage shifts during bias-stress and light illumination tests) were obtained for the buried-channel device relative to the conventional a-IGZO TFT. The specially designed channel-layer structure resulted in multiple conduction channels and hence large field-e ffect mobility. The in situ nitrogen-doping caused reductions in both the front-channel interface trap density and the density of deep states in the bulk channel layers, leading to a small subthreshold swing value. The better stability properties may be related to both the reduced trap states by nitrogen-doping and the passivation e ffect of the nitrogen-doped a-IGZO films at the device back channels.

**Keywords:** amorphous InGaZnO; thin-film transistor; nitrogen-doping; buried-channel; stability
