**4. Conclusions**

We presented a H-IGBT with partial p-polySi/p-SiC heterojunction at the backside of the device, and compared the electrical characteristics of H-IGBT and C-IGBT with ATLAS simulation software. The simulation results showed that, under the appropriate doping concentration, the heterojunction part has little effect on the forward conduction characteristics, and at the same it can greatly improve the turn-off speed of the device. In the case of forward blocking, the electric field in the entire drift region of the device is raised due to the introduction of the heterojunction, so the breakdown voltage of the device is improved. Finally, compared with C-IGBT, the turn-off loss of H-IGBT is reduced by 58.4%, the breakdown voltage is increased by 13.3%, and the on-state voltage drop is increased by 8.3%.

**Author Contributions:** Conceptualization, Y.W.; Software, X.W.; Investigation, F.-w.S., H.-k.M; writing—original draft preparation, H.-k.M.; writing—review and editing, Y.W.; supervision, Y.W.

**Funding:** This work was supported in part by the National Natural Science Foundation of China (No. 61774052) and in part by the Science and Technology on Analog Integrated Circuit Laboratory (No. 6142802180507).

**Conflicts of Interest:** The authors declare no conflict of interest.
