**About the Editor**

**Farid Medjdoub** is a CNRS Senior Scientist and has led a team focused on wide bandgap materials and devices at IEMN in France since 2014. He received his Ph.D. in Electrical Engineering from the University of Lille in 2004. Then, he moved to the University of Ulm in Germany where he served as a Research Associate before joining IMEC as a Senior Scientist in 2008. Multiple state-of-the-art results have been realized in the frame of his work. Among others, a world record thermal stability up to 1000 °C for a field effect transistor, the best combination of cut-off frequency/breakdown voltage or highest lateral GaN-on-silicon breakdown voltage using a local substrate removal have been achieved.

His research interests are in the design, fabrication, characterization, and simulation of innovative wide bandgap devices. He is author and co-author of more than 170 papers in this field. He holds several patents derived from his research.

#### *Editorial* **Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications**
