**2. Experimental Procedure**

The glass plate was purchased from Corning company (Corning, NY, USA) and cut into pieces the size of 25 mm × 25 mm × 7 mm (length × width × thickness) using a diamond saw. The substrates were cleaned sequentially in deionized (DI) water, acetone, and IPA (isopropanol), and DI water once again in order to remove any pollutants, residual solvents, or nonorganic components from the substrate surface. The substrates were then dried in an oven at 90 ◦C until the water was completely vaporized. The thin films were prepared using a sputtering target (two-inch diameter) composed of SnO2(95%) and TiO2(5%). The Ti:SnO2 films were then deposited on the glass substrates using an RF sputtering system with a sputtering power of 60 W, an argon gas flow rate of 29 sccm, an oxygen flow rate of 1 sccm, and a bias of 7.5 mTorr. The sputtering process was performed without substrate heating. The purpose of this experiment was to study the impact of different process parameters and conditions on the characteristics of a transparent conductive film. Following the deposition process, the Ti:SnO2 films were annealed at temperatures of 200, 300, 400, and 500 ◦C for 30 min. The structures of the annealed thin films were examined by X-ray diffraction (XRD, Bruker, Billerica, MA, USA). In addition, the surface roughness and crystal size were determined by atomic force microscopy (AFM, NTMDT-AFM, Bruker, Billerica, MA, USA) and scanning electron microscopy (SEM, JEOL JSM-7000F, JEOL, Kyoto, Janpan), respectively. The photoelectric property data consisted of light transmittance, resistivity, carrier concentration by spectrophotometer (UV Spectrophotometer, Hitachi 2900, Hitachi, Tokyo, Japan), and a Hall measuring instrument(AHM-800B, Advnaced Design Technology, Taipei, Taiwan), respectively. In this paper, the measurement for each condition was performed six times to confirm the data.
