Cell 2—Border Cell

With cell two as border cell, temperature gaps of Δ*T* = 3.8 ◦C for the thermal-coupled and of Δ*T* = 15.8 ◦C for the thermal isolated cells raised at discharge. This caused higher current differences and delayed crossing points of the cell currents and resulted in increasing SoC gaps within the parallel cells. For discharging this significantly influenced the current distribution after the crossing point. The OCV bending at low SoC led to a rapid voltage drop of cell one, which resulted in a current peak of cell two. This effect is more distinct with increasing SoC difference, which shows up in an increasing current gap from *I*2 = 0.73 · *I*Batt to *I*2 = 0.81 · *I*Batt comparing the thermal-coupled and the isolated scenario. For charging similar effects can be seen. As the current load starts at the point of the highest OCV bending and therefore no distinct SoC gaps have been raised, the rapid current decrease is not seen for charging.
