*2.6. Measurements*

A semiconductor parameter analyzer (Keithley 4200, Beaverton, OR, USA) and resistivity meter (Loresta-GX MCP-T700, Mitsubishi Chemical Analytech, Yamato, Japan) were used to measure electrical properties and perform bending tests on the devices. Photocurrent measurements were performed for deep UV and visible regions using a UV lamp (8 W, Vilber Lourmat, Collégien, France) and a halogen lamp (FOK-100W, Fiber Optic Korea, Cheonan, Korea). The surface morphology was also investigated using atomic force microscopy (AFM; Nanoscope IIIa, Digital Instruments, Bresso, Italy) and scanning electron microscopy (SEM; JSM-7500F, Tokyo, Japan).
