**7. Conclusions**

• Silicon carbide of *n*-type is compensated under irradiation due to the transition of carriers to the acceptor-type radiation defects being formed. As a result, the concentration difference Nd–N<sup>a</sup> (Na–Nd) linearly decreases with increasing irradiation dose.

– –


*Φ* ≈ V

**Author Contributions:** A.A.L.: Conceptualization, Project administration, Writing—original draft, V.V.K.: Investigation, Data curation. M.E.L.: Investigation, formal analysis, K.S.D.: Investigation, software. All authors have read and agreed to the published version of the manuscript.

**Funding:** This research received no external funding.

**Institutional Review Board Statement:** Not applicable.

**Informed Consent Statement:** Not applicable.

**Data Availability Statement:** The data underlying this article will be shared on reasonable request from the corresponding author.

**Conflicts of Interest:** The authors declare no conflict of interest.
