**Fabrizio Roccaforte**

He received the M.Sc. Degree in Physics from the University of Catania (Italy) in 1996, and the Ph.D. from the University of Gottingen (Germany) in 1999. Then, he was visiting scientist at ¨ the University of Gottingen, and scientific consultant at STMicroelectronics (Italy). In December ¨ 2001, he joined the permanent staff of CNR-IMM in Catania as a Researcher, and he became Senior Researcher in 2007 and Research Director in 2020. At CNR-IMM is team leader of the "Power- and High-frequency devices group".

His research interests are mainly focused in the field of wide band gap (WBG) semiconductors, (e.g., SiC, GaN, Ga2O3) materials and devices processing for power electronics devices. In particular, he has a recognized experience on metal/semiconductor and dielectric/semiconductor interfaces on WBG semiconductors.

He is co-author of about 350 papers in international journals and conference proceedings (scopus h-index=43), several review articles, 8 book chapters, 5 patents, and he has given several invited talks and lectures on SiC and GaN at international conferences.

He has been the chairperson of the conferences HeteroSiC-WASMPE2009, WOCSDICE2011, and ICSCRM2015. Currently, he is member of the Steering Committee of the conferences ECSCRM and EXMATEC and Section Editor-in-Chief of the journal *Materials* (MDPI).

He is or has been responsible for the CNR-IMM research unit in several European and National projects, bilateral collaborations with other European institutions, and industrial research contracts.
