*3.11. Defects in 3C-SiC: Point Defects*

Point defects can be observed in 3C-SiC by PL measurements on different samples grown in different conditions. In particular, the PL spectra in the wavelength range of 1100–1600 nm of different samples grown at different temperatures with the same growth rate are reported in Reference [64]. It was possible to observe that carbon vacancy (VC), carbon–silicon vacancy (VCVSi), carbon vacancy–Si antisite (VCCSi), and Al-related defects are present [65]. The growth rate and growth temperature seem to be the main parameters that influence the point defect formation during the growth, as also reported in a previous simulation paper [66].
