**6. Summary and Conclusions**

This paper gives a brief overview of the state of the art of the diamond technology for power devices. It shows that strong limitations of the material for such applications have now been overcome. However, its high hardness and epitaxial growth out of equilibrium are not straightforwardly resolved and have taken some decades. Example in the characterization method and the growth of p-type and n-type diamond show the high potential of this material. High-quality vertical and lateral growth have been demonstrated, and the example of Schottky and p–n diodes as well as transistors are shown to work under high-power electronic conditions. This shows that the diamond is competitive with other WBG materials for the power electronic niche. Several device architectures have been recently manufactured, even though reliability is still a pending subject for it commercialization. Therefore, the material is close to finding some application as an electronic material, making it possible to take advantage of its outstanding electronic properties.

**Funding:** The authors thank the Ministerio de Economia y Competitividad (MINECO) of the Spanish Government for funding under Grant Nos. TEC2017-86347-C2-1-R, ESP2017-91820, PID2020-117201RB-C21, and PID2019-110219RB-100 and the Junta de Andalucia (Andalusian Government, Spain) for funding through Nos. P20\_00946, FEDER-UCA18- 106470 and FEDER-UCA18-107851 projects.

**Institutional Review Board Statement:** Not applicable.

**Informed Consent Statement:** Not applicable.

**Data Availability Statement:** The data that support the findings of this study are available from the corresponding author upon reasonable request.

**Acknowledgments:** The authors also thank IMEYMAT and SC-ICYT (University of Cadiz) for the facilities in TEM characterization.

**Conflicts of Interest:** The authors declare no conflict of interest.
