**3. Experiments on Determining the Carrier Removal Rate**

" " Frequently, the radiation hardness of a semiconductor is evaluated by the parameter "carrier removal rate" Vd, defined by

$$\mathbf{V\_d} = \frac{\mathbf{N\_0} - \mathbf{N\_1}}{\Delta \mathbf{D}} \tag{9}$$

– – concentration in the epitaxial layer after the irradiation; and ΔD the irradiation dose. where N<sup>0</sup> is the concentration Na–N<sup>d</sup> in the epitaxial layer prior to irradiation; N<sup>1</sup> the Na–N<sup>d</sup> concentration in the epitaxial layer after the irradiation; and ∆D the irradiation dose.

The value of V<sup>d</sup> for Schottky diodes (SBDs) and junction-barrier Schottky (JBS) diodes under irradiation with electrons and protons are listed in Table 1, which also presents the carrier removal rates for silicon under the same irradiation conditions. It can be seen that V<sup>d</sup> for SiC is approximately twice as small as that for Si.


**Table 1.** Comparison of carrier removal rates in devices based on SiC and Si.

Figures 2 and 3 present the dependences Nd–N<sup>a</sup> = F(∆D) under irradiation with electrons and protons of SiC Schottky diodes manufactured by CREE company. It can be seen that this dependence is linear, which confirms the conclusion made in Section 2 about the mechanism of the radiation compensation of SiC via formation of deep acceptor levels. – = F(ΔD) under irradiation with elec- – = F(ΔD) under irradiation with elec-

– – **Figure 2.** Dependence of the concentration Nd–N<sup>a</sup> in Schottky diodes (CREE) with the blocking voltage of (**a**) 600 V and (**b**) 1200 V on the electron irradiation dose at room temperature. Different symbols correspond to different diodes from the same batch.

– **Figure 3.** Dependence of the concentration Nd–N<sup>a</sup> in Schottky diodes (CREE) with the blocking voltage of 600 V. Irradiation with protons at room temperature. Different symbols correspond to different diodes from the same batch.
