Reprint

Feature Papers in Electronic Materials Section

Edited by
February 2022
438 pages
  • ISBN978-3-0365-3227-1 (Hardback)
  • ISBN978-3-0365-3226-4 (PDF)

This book is a reprint of the Special Issue Feature Papers in Electronic Materials Section that was published in

Chemistry & Materials Science
Engineering
Physical Sciences
Summary

This book entitled "Feature Papers in Electronic Materials Section" is a collection of selected papers recently published on the journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power- and high-frequency electronics, optoelectronic devices, detectors, etc.). In the first part of the book, many articles are dedicated to wide band gap semiconductors (e.g., SiC, GaN, Ga2O3, diamond), focusing on the current relevant materials and devices technology issues. The second part of the book is a miscellaneous of other electronics materials for various applications, including two-dimensional materials for optoelectronic and high-frequency devices. Finally, some recent advances in materials and flexible sensors for bioelectronics and medical applications are presented at the end of the book.

Format
  • Hardback
License
© 2022 by the authors; CC BY-NC-ND license
Keywords
vertical GaN; quasi-vertical GaN; reliability; trapping; degradation; MOS; trench MOS; threshold voltage; nanomanufacturing; high-throughput method; material printing; flexible bioelectronics; nanomembrane; hybrid integration; GaAs; InGaAs channel; epitaxial lift-off; HEMT; van der Waals; 3C-SiC; stacking faults; doping; KOH etching; silicon carbide; radiation hardness; proton and electron irradiation; charge removal rate; compensation; irradiation temperature; 3C-SiC; heteroepitaxy; bulk growth; compliant substrates; defects; stress; 3C-SiC; cubic silicon carbide; power electronics; thin film; iron-based superconductor; pulsed laser deposition; transmission electron microscopy; diamond; MPCVD growth; power electronics; electron microscopy; chemical vapour deposition; 2D materials; MoS2; silica point defects; optical fibers; radiation effects; 4H-SiC; ohmic contact; SIMS; Ti3SiC2; simulation; silicon carbide; 4H-SiC; Schottky barrier; Schottky diodes; electrical characterization; graphene absorption; Fabry–Perot filter; radio frequency sputtering; CVD graphene; diamond; GaN; HEMT; thermal management; GaN-on-diamond; CVD; arrhythmia detection; cardiovascular monitoring; soft biosensors; wearable sensors; flexible electronics; GaN; gate dielectric; aluminum oxide; interface; traps; instability; insulators; binary oxides; high-κ dielectrics; power electronics; wide band gap semiconductors; energy electronics; ultra-wide bandgap; power electronics; diodes; transistors; gallium oxide; Ga2O3; spinel; ZnGa2O4