*Review* **Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices**

**Anthony Calzolaro 1,2,\*, Thomas Mikolajick 1,2 and Andre Wachowiak <sup>2</sup>**


**\*** Correspondence: anthony.calzolaro@namlab.com

**Abstract:** Insulated-gate GaN-based transistors can fulfill the emerging demands for the future generation of highly efficient electronics for high-frequency, high-power and high-temperature applications. However, in contrast to Si-based devices, the introduction of an insulator on (Al)GaN is complicated by the absence of a high-quality native oxide for GaN. Trap states located at the insulator/(Al)GaN interface and within the dielectric can strongly affect the device performance. In particular, although AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) provide superior properties in terms of gate leakage currents compared to Schottky-gate HEMTs, the presence of an additional dielectric can induce threshold voltage instabilities. Similarly, the presence of trap states can be detrimental for the operational stability and reliability of other architectures of GaN devices employing a dielectric layer, such as hybrid MIS-FETs, trench MIS-FETs and vertical FinFETs. In this regard, the minimization of trap states is of critical importance to the advent of different insulated-gate GaN-based devices. Among the various dielectrics, aluminum oxide (Al2O<sup>3</sup> ) is very attractive as a gate dielectric due to its large bandgap and band offsets to (Al)GaN, relatively high dielectric constant, high breakdown electric field as well as thermal and chemical stability against (Al)GaN. Additionally, although significant amounts of trap states are still present in the bulk Al2O<sup>3</sup> and at the Al2O3/(Al)GaN interface, the current technological progress in the atomic layer deposition (ALD) process has already enabled the deposition of promising high-quality, uniform and conformal Al2O<sup>3</sup> films to gate structures in GaN transistors. In this context, this paper first reviews the current status of gate dielectric technology using Al2O<sup>3</sup> for GaNbased devices, focusing on the recent progress in engineering high-quality ALD-Al2O3/(Al)GaN interfaces and on the performance of Al2O<sup>3</sup> -gated GaN-based MIS-HEMTs for power switching applications. Afterwards, novel emerging concepts using the Al2O<sup>3</sup> -based gate dielectric technology are introduced. Finally, the recent status of nitride-based materials emerging as other gate dielectrics is briefly reviewed.

**Keywords:** GaN; gate dielectric; aluminum oxide; interface; traps; instability
