Silicon Nanodevices

doi:10.3390/books978-3-0365-4677-3

Reprint

Download Flyer

Silicon Nanodevices

Edited by

August 2022

238 pages

ISBN978-3-0365-4678-0 (Hardback)
ISBN978-3-0365-4677-3 (PDF)

https://doi.org/10.3390/books978-3-0365-4677-3

Free download (PDF)

This book is a reprint of the Special Issue Silicon Nanodevices that was published in

Chemistry & Materials Science

Engineering

Summary

This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.

Format

Hardback

License

Keywords

silicon; yolk−shell structure; anode; lithium-ion batteries; in-plane nanowire; site-controlled; epitaxial growth; silicon; germanium; nanowire-based quantum devices; HfO₂/Si_0.7Ge_0.3 gate stack; ozone oxidation; Si-cap; interface state density; passivation; GOI; photodetectors; dark current; responsivity; prussian blue nanoparticles; organotrialkoxysilane; silica beads; arsenite; arsenate; water decontamination; vertical gate-all-around (vGAA); digital etch; quasi-atomic-layer etching (q-ALE); selective wet etching; HNO₃ concentration; doping effect; vertical Gate-all-around (vGAA); p⁺-Ge_0.8Si_0.2/Ge stack; dual-selective wet etching; atomic layer etching (ALE); stacked SiGe/Si; epitaxial grown; Fin etching; FinFET; short-term potentiation (STP); long-term potentiation (LTP); charge-trap synaptic transistor; band-to-band tunneling; pattern recognition; neural network; neuromorphic system; Si-MOS; quantum dot; spin qubits; quantum computing; GeSn; CVD; lasers; detectors; transistors; III-V on Si; heteroepitaxy; threading dislocation densities (TDDs); anti-phase boundaries (APBs); selective epitaxial growth (SEG); n/a