*2.1. HZO Thin Film Deposition by PEALD*

For HZO thin film deposition, a substrate comprising a 50 nm TiN bottom electrode deposited on a SiO2(100 nm)/Si wafer was used. HZO thin film deposition was performed by PEALD (iOV-dx2, iSAC research, Hwaseong, Korea) using the experimental setup illustrated in Figure 1, and tetrakis(ethylmethylamido)-hafnium (TEMA-Hf, iChems, Hwaseong, Korea) and tetrakis(ethylmethylamido)-zirconium (TEMA-Zr, iChems, Hwaseong, Korea) were used as the precursors of HfO2 and ZrO2, respectively. To fabricate the HZO thin films, HfO2 and ZrO2 were alternately deposited in a 1:1 ratio, and this cycle was repeated until a thin film with a thickness of 10 nm was obtained. To obtain an optimal HZO thin film, deposition was performed in a temperature range of 100 to 280 ◦C. O2 gas was injected as a reactant, and oxidation was induced through a 200 W plasma discharge to form oxides. The detailed PEALD process conditions are outlined in Table 1. To prepare the top electrode for the evaluation of the electrical properties, a shadow mask was used, and a TiN electrode with a diameter of 200 μm was deposited at a thickness of 50 nm by reactive sputtering. Next, as shown in Table 2, crystallization of the HZO thin films was performed by post-annealing using rapid thermal annealing (RTA). Post-annealing was performed for 30 s in a temperature range of 500 to 700 ◦C in a nitrogen ambient of 5 Torr.
