**5. Conclusions**

An IA suitable for bioimpedance-based IoT applications and based on the ICF technique has been presented. The SSF structure has been incorporated in the design of the IA in order to reduce input referred noise and silicon area. In addition, a FD implementation has been selected to enhance the overall performance of the circuit. The proposed ICF FD IA been designed and fabricated in 180 nm CMOS technology to operate with a supply voltage of 1.8 V and provide a voltage gain of 4 V/V. Measurements on 10 different samples of the silicon prototype showed wide bandwidth, high CMRR and linear signal processing, thus confirming the suitability of the proposed solution for the intended application.

**Author Contributions:** Conceptualization, I.C., J.M.C. and J.L.A.; methodology, I.C., J.M.C. and J.L.A.; software, I.C. and J.M.C.; formal analysis, J.M.C. and R.P.-A.; investigation, I.C., J.M.C. and J.L.A.; resources, I.C., J.M.C. and M.Á.D.; data curation, I.C., J.M.C., M.Á.D. and R.P.A.; writing original draft preparation, I.C., J.M.C. and J.L.A.; writing—review and editing, I.C., J.M.C., J.L.A., M.Á.D., R.P.-A. and J.F.D.-C.; visualization, I.C. and J.M.C.; supervision, J.M.C. and J.L.A.; project administration, J.F.D.-C.; funding acquisition, J.L.A. and J.F.D.-C. All authors have read and agreed to the published version of the manuscript.

**Funding:** Work funded by projects RTI2018-095994-B-I00, from MCIN/AEI/10.13039/501100011033, and IB18079, from *Junta de Extremadura* R&D Plan, and by Fondo Europeo de Desarrollo Regional (FEDER) Una manera de hacer Europa. Silicon samples granted by EUROPRACTICE MPW and design tool support.

**Conflicts of Interest:** The authors declare no conflict of interests.
