Reprint
Fundamentals and Recent Advances in Epitaxial Graphene on SiC
Edited by
May 2021
140 pages
- ISBN978-3-0365-1179-5 (Hardback)
- ISBN978-3-0365-1178-8 (PDF)
This is a Reprint of the Special Issue Fundamentals and Recent Advances in Epitaxial Graphene on SiC that was published in
Biology & Life Sciences
Chemistry & Materials Science
Computer Science & Mathematics
Engineering
Environmental & Earth Sciences
Physical Sciences
Summary
This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.
Format
- Hardback
License and Copyright
© 2022 by the authors; CC BY-NC-ND license
Keywords
epitaxial graphene; copper; redox reaction; electrodeposition; voltammetry; chronoamperometry; DFT; epitaxial graphene; silicon carbide; Raman spectroscopy; 2D peak line shape; G peak; charge density; strain; epitaxial graphene; atomic layer deposition; high-k insulators; ion implantation; Raman; AFM; XPS; graphene; epitaxial graphene; SiC; 3C-SiC on Si; substrate interaction; carrier concentration; mobility; intercalation; buffer layer; surface functionalization; twistronics; twisted bilayer graphene; flat band; SiC; epitaxial graphene on SiC; buffer layer; quasi-free-standing graphene; monolayer graphene; high-temperature sublimation; terahertz optical Hall effect; free charge carrier properties; epitaxial graphene; sublimation; SiC; buffer layer; electronic properties; material engineering; deposition