Reprint

Advanced Inorganic Semiconductor Materials

Edited by
April 2024
164 pages
  • ISBN978-3-7258-0723-9 (Hardback)
  • ISBN978-3-7258-0724-6 (PDF)

This is a Reprint of the Special Issue Advanced Inorganic Semiconductor Materials that was published in

Chemistry & Materials Science
Summary

This Reprint is based on the Special Issue with the same title in Inorganics. It aims to immerse the reader in the most current research and ideas in inorganic semiconductors, from traditional to novel two-dimensional semiconductor materials and one-dimensional quantum dots. In this Reprint, leading experts in the field summarize contemporary findings and share their insights, research findings, and visions for the future. It contains diverse studies, including those on experimental fabrication and characterization as well as the electronic, electrical, magnetic, optoelectronic, and thermal properties of inorganic semiconductors.

In total, 11 contributions were published, of which 9 are original papers and 2 are topical reviews. These contributions will help readers increase their knowledge in the field of inorganic semiconductor materials and be a new source of inspiration for novel, focused investigations, which we sincerely hope will contribute to the next edition of this Special Issue, “Advanced Inorganic Semiconductor Materials: 2nd Edition”.

Format
  • Hardback
License and Copyright
© 2024 by the authors; CC BY-NC-ND license
Keywords
colloidal quantum dots; supraparticles; auger recombination; fluorescence resonance energy transfer; adsorption; metal atoms; 2D SiC; magnetism; first-principles calculations; monolayer semiconductor; bandgap; electronic structure; biaxial strain; DFT calculations; optoelectronics; avalanche photodiode; Ge/Si heterojunction; avalanche multiplication; photodetector; optical fiber telecommunication; inverse opal; photonic crystals; fabrication methods; photocatalytic application; n/a; β-Ga2O3; Ohmic contact; ion implantation; interface; annealing temperature; optical absorption coefficient; spherical quantum dots; Schrödinger equation; hydrogenic impurity; Woods–Saxon potential; lead halide perovskites; MA1-xFAxPbCl3; Raman spectroscopy; Brillouin spectroscopy; Ag2TexS1−x QDs; ternary alloying; band gap engineering; photodetectors; two-dimensional (2D) BN sheet; electronic band structure; density of states; anisotropic properties; magnetism; plasticity; hafnium dioxide; channel; interlay; n/a