Search Results (1,525)

Nanotextured thin film metallic glasses (TFMGs) have emerged as promising antimicrobial coatings for biomedical applications; however, systematic comparisons across compositionally distinct Ti- and Zr-based systems, as well as their early-stage bactericidal mechanisms, remain limited. Here, we show, for the first time, a comparative, compositionally resolved correlation linking alloy chemistry, nanotexture, and bactericidal mechanisms across polymorphic TFMGs. Three co-sputtered biocompatible coatings (Ti₄₇Fe₄₁Cu₁₂, Zr₇₁Fe₃Al₂₆, and Zr₅₈W₃₁Cu₁₁) were deposited on medical-grade titanium and stainless steel (SS316L) via magnetron co-sputtering, producing uniform amorphous films (190–298 nm) with nanoscale roughness of 1.6 ± 0.05 to 8.1 ± 0.05 nm. Surface wettability spanned hydrophilic (71.1 ± 5.6°) to hydrophobic (106.5 ± 3.5°), modulating bacterial interactions. Antimicrobial performance against Pseudomonas aeruginosa was evaluated using live/dead fluorescence imaging, quantitative image analysis, and electron microscopy after 2–4 h incubation. All coatings reduced bacterial adhesion and viability relative to bare substrates, with Zr₅₈W₃₁Cu₁₁ achieving >60% reduction in surface-associated bacterial coverage. Time-resolved analysis revealed a rapid transition to predominantly non-viable populations on coated surfaces, in contrast to sustained viability on controls. Mechanistically, bactericidal activity arises from the synergistic coupling of nanotopography-induced membrane stress, wettability-governed adhesion energetics, and in situ formation of CuO, Fe₂O₃, WO₃, and ZrO₂ oxides that promote electrostatic interactions and proposed reactive oxygen species generation, driving oxidative membrane damage. These results establish a scalable design framework for TFMGs, while highlighting the need for long-term biofilm and electrochemical validation. Full article

Chalcopyrite-based thin-film solar cells have great potential for various applications, such as top or bottom cells in tandem devices, in addition to their use as standard single-junction modules due to their tuneable bandgap energy. A bandgap energy E_g > 1.5 eV should be targeted to realize a wide-bandgap top cell, e.g., by increasing the [Ga]/([Ga] + [In]) (GGI) ratio in Cu(In,Ga)Se₂ (CIGS) cells to the range of 0.7–1. A second approach is targeting the second theoretical efficiency maximum at a little lower E_g = 1.34 eV with a GGI around 0.6 for high-efficiency single-junction applications with reduced electrical losses. An industry-relevant (Ag,Cu)(In,Ga)Se₂ (ACIGS) co-evaporation process for wide-bandgap cells fabricated with GGI ratios above 0.6, with moderate [Ag]/([Ag] + [Cu]) (AAC) ratios < 0.1 and in-line RbF-PDT, was established on molybdenum-coated soda-lime glass substrates. Both measures, Ag alloying and RbF-PDT, can increase power conversion efficiency (PCE) mainly due to improved open-circuit voltage (V_OC). In addition, Ag addition can increase fill factor (FF)_, leading to an increase in the PCE for cells with GGI > 0.6 compared to Ag-free reference cells. (Zn,Mg)O, either with a [Mg]/([Mg] + [Zn]) ratio of 0.15 or 0.25, is a good option as high-resistive layer replacing the commonly used i-ZnO in combination with a CdS buffer. Our best ACIGS wide-bandgap solar cells with RbF-PDT and Zn_0.85Mg_0.15O (without anti-reflective coating (ARC)) from various experimental campaigns show a PCE of 12.7% (E_g = 1.50 eV), and with a slightly reduced E_g of 1.45 eV a PCE of 15.5%, with V_OC of 933 mV (V_OC deficit of 517 mV), and a good FF of 73.2%. In the case when the bandgap is significantly lowered to 1.34 eV (GGI = 0.61), to the second theoretical efficiency maximum, we achieved a PCE of 18.2% with ARC for an Ag-free CIGS cell with RbF-PDT. For this cell with a CdS/i-ZnO buffer system the V_OC deficit is 480 mV, and the FF is 78.1%. Full article

Few-layer hexagonal boron nitride (hBN) is a promising two-dimensional dielectric for electronic and neuromorphic devices. However, its practical deployment is often hindered by the thickness nonuniformity of as-grown samples and by defects introduced during the transfer-stacking process of assembled samples. In particular, the influence of the initial hBN quality on the final stacked-film quality remains insufficiently understood. Here, we report a wafer-scale strategy for fabricating high-quality few-layer hBN based on ultraflat single-crystal hBN (USC-hBN) monolayers. Compared with transfer-stacked hBN grown on Cu foil (rough hBN), stacked few-layer USC-hBN shows a much lower surface roughness and a drastically reduced wrinkle density, indicating superior flatness and interfacial cleanliness. Furthermore, memristors fabricated from six-layer USC-hBN exhibit clearer resistive-switching behavior and a higher ON/OFF ratio than those based on rough hBN, owing to the more uniform surface/interface. These results demonstrate that source-material flatness is a critical determinant of transfer-stacked hBN quality and device performance. This work provides an effective route toward reliable integration of high-quality two-dimensional dielectric films. Full article

The high-rate recycling of scrap steel introduces persistent residual copper (Cu), which accumulates at prior austenite grain boundaries at the surface, during high-temperature reheating, leading to Cu-induced sensitization and deleterious “hot shortness”. To address this, a predictive analytical framework was derived using Fick’s Second Law and the Sekerka, Jeanfils, and Heckel (SJH) approach to model the dissolution of Cu-rich films as a 1D planar moving boundary problem. The validity of this analytical framework was first established through experimentation on controlled Cu-coated steel wire rods, where theoretical concentration profiles showed strong agreement with empirical depth profiles. When applied to a 0.21 wt.% Cu steel at 1000 °C, the model predicted a critical extinction time (t*) of approximately 8.57 min for the complete dissolution of a 20 nm sensitized film. Experimental trials on sensitized wire rods confirmed this prediction, demonstrating an 89% reduction in the frequency of detectable sensitized zones and a significant decrease in zone width following a 10 min thermal dwell. The approach provides a standardized, scalable, and composition-adaptable methodology, grounded in a 1D planar approximation, for optimizing desensitization heat treatments across a range of Cu contents, offering a practical strategy to increase scrap steel utilization while mitigating hot shortness. Full article

Chitosan-based copper composites have attracted considerable interest for biomedical and antimicrobial uses due to their biocompatibility, adjustable dielectric characteristics, and ion-mediated antimicrobial effectiveness. In this study, chitosan films doped with Cu(NO₃)₂, containing 3, 6, and 9 wt% of copper nitrate were produced using a solution-casting method at room temperature. This was done to explore the relationship between structural interactions, dielectric relaxation, optical properties, and antimicrobial efficacy. The resulting composite has been investigated physically using FTIR, XRD, optical analysis, and dielectric spectroscopy, and biologically for its antimicrobial activity. FTIR revealed the molecular structure of Cs-Cu(NO₃)₂ and changes resulting from new bond(s) formation and/or decomposition. XRD indicated that there are no peaks assigned for CuO, which weakens the composite antimicrobial activity. Optical analysis showed an increase in the band gap with copper (II) nitrate concentration over 3%. Additionally, the electrical impedance of the resulting composite increased by approximately one decade. A detailed electrical analysis of the charge-carrier types is provided. Moreover, the antimicrobial activity of chitosan is slightly enhanced by the additive copper (II) nitrate in a dose-dependent manner. The current research offers a mechanistic understanding of the structure–property relationships that govern the behavior of Cu(NO₃)₂–chitosan composites, emphasizing the significant influence of processing conditions on adapting of their dielectric and biological properties. Full article

In this study, the PV performance of Au/BSF/CTS/CdS/i-ZnO/ITO thin-film solar cell (TFC) structure was systematically investigated using SCAPS-1D software. The effects of several critical parameters, including interface defect density, recombination mechanisms, absorber defect density, operating temperature, parasitic resistances, and different back surface field (BSF) layers, were comprehensively analyzed. The SCAPS-1D software results reveal that the photovoltaic performance is highly sensitive to the defect density at the absorber layer interface. When the interface defect density increased from 10¹² cm⁻³ to 10¹⁶ cm⁻³, the open-circuit voltage ($V_{OC}$) decreased from approximately 0.68 V to 0.45 V, while the power conversion efficiency (PCE) declined from nearly 19% to about 7%. Similarly, an increase in absorber defect density enhanced the Shockley–Read–Hall recombination rate, thereby reducing carrier lifetime and significantly deteriorating PV parameters. The influence of radiative and Auger recombination ($B_{Auger}$) processes was also examined, revealing that higher recombination coefficients lead to substantial reductions in current density and efficiency due to increased carrier losses. Furthermore, the impact of parasitic resistances was evaluated, demonstrating that decrease the series resistance from 9.5 Ω·cm² to 0.5 Ω·cm² increased the fill factor ($FF$) from about 48% to nearly 78%, while the device efficiency improved to approximately 32%. In addition to these parameters, particular emphasis was placed on the investigation of different BSF materials to enhance back contact performance. Various BSF layers, including SnS, PbS, V₂O₅, and Sb₂S₃, were examined to improve band alignment and suppress minority carrier recombination at the rear interface. Among these materials, the SnS BSF layer provided the most favorable band alignment with the CTS absorber, leading to a notable improvement in PV parameters and increasing the efficiency to approximately 25%. Overall, the results demonstrate that optimizing defect densities, recombination mechanisms, parasitic resistances, and especially the selection of appropriate BSF materials plays a crucial role in improving the performance of CTS-based TFCs. Full article

The need for sustainable and cost-effective thermoelectric materials has brought attention to earth-abundant and mineral compounds, like Cu₂ZnSnS₄ (CZTS). In this work, CZTS nanoparticles (NPs) were synthesized via the sol–gel method using environmentally friendly solvents based on water and ethanol mixtures. The resulting CZTS NPs were then processed into inks through ball milling to produce a thin-film thermoelectric generator (TEG). Structural and microstructural properties were investigated via X-ray diffraction and Raman spectroscopy, confirming the kesterite CZTS phase upon sintering. The chalcogenide exhibited p-type semiconductor behaviour, with a Seebeck coefficient reaching ~69 µV/K at 385 K. Van-der-Pauw measurements of conductivity confirmed a non-degenerate semiconducting behaviour, achieving ~1.77 S/cm at 323 K. A two-leg CZTS thin-film TEG reaching a maximum power output of 32(3) nW at a ΔT ~160 K was used, measured with a home-made setup. The volume-specific power of the generator reached $4\times {10}^{-4}$μW cm⁻³ K⁻². These results point to an effective use of sol–gel-based techniques to produce a functional thermoelectric generator, providing a costless and environmentally friendly approach to CZTS NPs. Full article

Cobalt/copper (Co/Cu) multilayers are prototypical systems for giant magnetoresistance (GMR)-based spintronic devices, where interfacial quality and spin-dependent scattering critically determine performance. In this work, Co/Cu multilayers were fabricated by pulsed laser deposition (PLD) on SITAL ceramics, Si(100), and BK7 substrates, with 10, 20, and 40 bilayer repetitions, in order to elucidate the interplay between microstructure, interfacial diffusion, and magnetotransport properties. Systematic characterization combining atomic force microscopy (AFM), scanning electron microscopy (SEM), SIMS/SNMS depth profiling, vibrating sample magnetometry (VSM), and Hall effect measurements reveals that PLD enables controlled multilayer growth with low background roughness and well-defined periodic structures, despite the presence of characteristic particulates. A clear dependence of the GMR response on both bilayer number and substrate type is observed. Increasing the number of repetitions enhances spin-dependent scattering at Co/Cu interfaces, leading to a progressive increase in the magnetoresistance amplitude, reaching ~−14% for 40-period multilayers on SITAL substrates. This enhancement is attributed to the higher interface density and improved interfacial coherence, as confirmed by SIMS/SNMS analysis showing reduced interdiffusion in thicker stacks. In parallel, Hall effect measurements indicate a reduction in carrier density and an increase in carrier mobility with increasing multilayer thickness, consistent with improved charge transport stability. A pronounced substrate effect is demonstrated: SITAL-supported multilayers exhibit enhanced GMR sensitivity (up to ~44%·T⁻¹) due to increased diffuse spin-dependent scattering at rougher interfaces, whereas Si(100) substrates promote smoother growth, improved structural coherence, and more stable electronic transport. While sputtering typically enables smoother interfaces and higher GMR ratios, PLD offers enhanced flexibility in tailoring interfacial morphology and diffusion processes, which can lead to improved sensitivity under specific conditions. These results establish PLD as a versatile route for tailoring Co/Cu multilayers, enabling controlled optimization of the trade-off between sensitivity and structural quality for advanced spin-valve and magnetic sensor applications. Full article

CuO thin layers were synthesized using the sol–gel method and deposited onto glass substrates through the dip-coating technique. The impact of annealing temperatures on the structural, optical, and electrical characteristics of the developed CuO thin layers was comprehensively assessed through X-ray diffraction, UV–visible spectrophotometry, and four-point techniques, respectively. X-ray diffraction analysis revealed the formation of CuO thin layers with a distinctive monoclinic tenorite phase structure. The UV–visible spectrophotometer results demonstrated a decrease in transmittance from approximately 30% to about 7% as the annealing temperature increased from 200 °C to 400 °C. The semiconducting properties exhibited temperature-dependent variations, with the band gap narrowing from 1.70 to 1.48 eV as the temperature increased from 200 to 400 °C. Additionally, the electrical conductivity of the CuO layers exhibited a significant increase from 48 to 61 S.m⁻¹ over the same temperature range. Collectively, the findings suggest that an annealing temperature of 400 °C is optimal for achieving well-crystallized CuO layers with desirable characteristics, including high absorbance, low transmittance, a reduced energy band gap, and enhanced electrical conductivity. These results underscore our ability to manipulate CuO properties, offering insights for tailoring them to meet specific requirements, particularly in the context of gas sensor applications. Full article

X-band copper resonating cavities are key components of future pulsed GHz normal-conductive multi-TeV accelerators. High electric field gradients are required for emerging applications; however, as gradients increase, components’ lifetime decreases, primarily due to radiofrequency (RF) breakdown. Coating technologies are being investigated in several laboratories to improve RF structure, performance and lifetime. To this end, we investigated the feasibility of fabricating nanometer-periodic Cu/Mo metallic multilayers on three-dimensional (3D) aluminum mandrels designed to replicate X-band copper resonating cavities. These nanometer-period multilayers are proposed to mitigate surface degradation due to electric breakdown at high accelerating gradients by stabilizing inner cavity surfaces against dislocation evolution and roughening caused by thermo-mechanical fatigue. High-Power Impulse Magnetron Sputtering (HiPIMS) in a bias-controlled dual closed-field magnetron configuration was employed to deposit alternating Mo and Cu nano-layers onto the 3D geometries. Given the complexity of HiPIMS technology, plasma pulse evolution was studied by combining time-resolved optical emission spectroscopy with electrical measurements of the pulse discharge. The influence of the process parameters, particularly the applied DC bias, on film growth was studied using non-destructive microprobe α-particle elastic backscattering spectrometry (µEBS) and scanning transmission electron microscopy (STEM). STEM and µEBS analyses confirmed that Mo layers with thicknesses of approximately 5–35 nm were successfully deposited repeatedly on thicker Cu layers (30–150 nm), preserving individual layer properties with minimal interdiffusion and alloying. The layers were deposited inside trenches with an aspect ratio of 5:1 representative of X-band irises. This technology, coupled with the replica process, could be applied to highly engineered nanostructured coatings for X-band cavity treatment in compact particle accelerator prototypes, as it may improve electrical breakdown lifetime under high accelerating fields, at least for degradation processes driven by the high mobility of copper dislocations. Full article

Cathodic electrodeposition of copper on molybdenum and stainless-steel substrates has been investigated with the aim of examining their potential to produce thin copper foils (TCFs). Copper in the form of a thin film was electrodeposited galvanostatically from the acidic sulfate electrolyte without and with an addition of suppressor/activator additives, such as chloride ions, polyethylene glycol 6000 and 3–mercapto–1–propanesulfonic acid. The cathodes and electrodeposited Cu films were characterized by SEM, AFM, and XRD techniques, while the adhesion of Cu films, as a crucial parameter in the production of Cu foils, was estimated by a lab-made prototype of a bending test machine made by applying additive technology. The adhesion parameter named “critical cycle number” (n_c), which defines the minimal number of cycles leading to a delamination (separation) of the film from the cathode was used for assessing the adhesion features of the films. The easiest delamination, i.e., the smallest n_c, showed nanocrystalline films obtained with the addition of all additives, whereupon the values were significantly smaller than the values obtained for microcrystalline films obtained without and with a partial combination of the additives. The easy delamination of the nanocrystalline films indicated that both substrates have a high potential for application in the production of TCFs. Full article

In nuclear power, marine engineering, and other fields, a matching system composed of duplex steel and copper alloy is a common combination for rotating components in a seawater environment. However, this system is susceptible to galvanic corrosion that seriously threatens its service safety and service life, with ZCuAl10Fe5Ni5 being the main component corroded. Additionally, current corrosion research on this system has evident gaps. Specifically, the influence of area ratio on galvanic corrosion remains insufficiently understood, and the action mechanism of Cl⁻ on the ZCuAl10Fe5Ni5-based corrosion product film in seawater, as well as the product evolution path, has not been fully revealed, which restricts the development of targeted protection technologies. This study explores the degradation mechanism of ZCuAl10Fe5Ni5 in a specific high-salinity environment (20,000 mg/L Cl⁻), characteristic of nuclear power plant service conditions. The results show that due to the significant electrode potential difference between the SAF2507 duplex steel and ZCuAl10Fe5Ni5 copper alloy, a stable galvanic couple is formed, with ZCuAl10Fe5Ni5 acting as the anode and undergoing dissolution corrosion. When the area ratio of ZCuAl10Fe5Ni5 (anode) to SAF2507 duplex steel (cathode) is 1:50, a significantly stronger galvanic effect is observed. The high concentration of Cl⁻ in seawater can damage the surface of the ZCuAl10Fe5Ni5-based corrosion product film, leading to intensified local corrosion. The ZCuAl10Fe5Ni5-derived corrosion products have a layered structure mainly comprising a mixed system of Cu-Al-Mg oxides/hydroxides, and the corrosion process is accompanied by selective aluminum depletion corrosion. This study provides insight into the corrosion mechanism and key influencing factors of ZCuAl10Fe5Ni5 in the matching system, as well as a theoretical basis and technical support for the design of compatibility metal materials in a seawater environment and the control of corrosion in ZCuAl10Fe5Ni5. Full article

CuIn₅Se₈ is reported as a remarkable copper-deficient layer that contains ordered vacancy compounds (OVCs) for high-efficiency chalcopyrite-based solar cells; however, the understanding of its carrier characteristics has remained limited. OVCs could naturally form on the surface of chalcopyrite absorber. In this study, the carrier dynamics characteristics of OVCs were investigated by constructing a junction consisting of chalcopyrite absorber and CdS buffer layer. At first, the band structure of CuIn₅Se₈ was studied to determine the bandgap properties. Then, thermodynamic stability, defect formation energy, defects and carrier concentration, defect transition energy level of CuIn₅Se₈ and its Cd doping state (caused by CdS) were comparatively studied. The results suggest that Cd doping has different effects on the defect and carrier characteristics of OVCs with various chemical potentials. However, the OVC always remains n-type under the whole thermodynamically stable region, with contribution from the hallow-level In_Cu donor defect. Finally, the OVC’s carrier dynamics characteristics were assessed using the collected defect and carrier data. It is indicated that the OVC layer may contribute to the formation of a p-n homojunction in solar cells. Under selenium-rich conditions, the OVC layer increases the carrier density on the n-type side of p-n junction nearly 30-fold, which helps reduce the difference in carrier density and minority current density between two sides of the p-n junction. The conversion efficiency of the solar cell with OVC shows a 7.25% improvement when compared to the control. The distinct behavior of OVCs may serve as a valuable reference for the creation or improvement of a related functional film layer or device. Full article

Luminescent organic–inorganic Cu(I) halide hybrid molecular crystals exhibit remarkable structural diversity and photophysical properties, but their application in aqueous environments is often limited by insufficient stability. Herein, we report portable and reusable photoluminescent sensors based on Cu(I)–I triethylenediamine derivatives [Cu₄I₆(pr-ted)₂] and [Cu₃I₅(bz-ted)₂] (pr-ted = 1-propyl-1,4-diazabicyclo[2.2.2]octan-1-ium; bz-ted = 1-benzyl-1,4-diazabicyclo[2.2.2]octan-1-ium). Their submicrometric particles exhibit intense UV-excited emissions and high photoluminescence quantum yields but limited water stability. To address this limitation, ultrasound sonication was employed to control particle size and produce stable suspensions that can be incorporated into polymeric matrices via 3D printing with photocurable resins or polylactic acid (PLA) films by drop-casting, yielding mechanically robust composites that retain their structural and optical properties. The devices used act as selective turn-off luminescent sensors for Fe³⁺ in aqueous media, with nanomolar detection limits (1.33–1.58 nM) below regulatory thresholds for drinking water. Moreover, [Cu₃I₅(bz-ted)₂] enables tetracycline detection in river water with a limit of detection of 0.038 nM. Mechanistic studies indicate that reversible photoinduced electron transfer is the primary quenching pathway, while composites maintain sensing performance over multiple reuse cycles. Full article

The study of wide-bandgap nanomaterials has gained considerable attention in recent years, especially in the case of semiconductor oxides that exhibit full or partial optical transparency in fundamental research and technological applications. These include optoelectronic devices, gas sensors and photovoltaic cells, among others. The activation or adjustment of optical and structural properties, especially the bandgap and the parameters of unit cell lattice, can be achieved by varying the dopant concentration during the synthesis of semiconductor thin films in these applications. In this context, copper oxide has emerged as a valuable material, owing to its thoroughly analyzed structural behavior and its broad potential across multiple technological fields. The present work focuses on the synthesis of zinc-doped copper oxide (Zn_xCu_1−xO) thin films on silicon and quartz substrates through ultrasonic spray pyrolysis. The effects of varying the zinc doping concentration (0.0, 5.0, 10.0 and 20.0 at. %) on the morphological, structural, and optical characteristics of the Zn_xCu_1−xO films were analyzed. Scanning electron microscopy (SEM) analysis indicated a gradual increase in nanoparticle size, rising from 221 nm for CuO to approximately 322 nm for the Zn_0.2Cu_0.8O samples as the zinc content increased. Structural characterization via X-ray diffraction (XRD) confirmed a monoclinic crystal arrangement belonging to the $C_{2h}^6$ (c2/c) space group. As the percentage of zinc increased, the XRD peaks shifted to lower angles, consequently increasing the volume and crystal lattice parameters of the Zn_xCu_1−xO structure; this finding was additionally supported by a redshift observed in the Raman analysis. The transmittance spectra of the films showed low transmittance between 40 and 44%. The optical bandgap of the Zn_xCu_1−xO thin films was estimated from the transmittance data by applying the Tauc plot method. A decrease in the band gap was observed at higher doping concentrations. It can be confirmed that no secondary phases are observed at a doping level of 20.0 at. % of zinc, indicating good solubility of zinc in CuO. The analysis and discussion of these findings are included throughout this work to elucidate the controversies noted in the literature. Full article