- Article
Optimizing the PECVD Process for Stress-Controlled Silicon Nitride Films: Enhancement of Tensile Stress via UV Curing and Layered Deposition
- Jianping Ning,
- Chunjie Niu,
- Zhen Tang,
- Yue Sun,
- Hao Yan and
- Dayu Zhou
Silicon nitride (SiN) films deposited via plasma-enhanced chemical vapor deposition (PECVD) exhibit tunable tensile stress, which is critical for various microelectronic and optoelectronic applications. In this paper, the effects of silane (SiH4) flo...