Search Results (1,761)

To optimize the performance of indium oxide (In₂O₃)-based thermoelectric materials, this study prepared Nb-doped In₂O₃ via mechanical alloying and spark plasma sintering (SPS), investigating its regulatory mechanism on the crystal structure, as well as on thermoelectric and mechanical properties. X-ray diffraction (XRD) showed that Nb was incorporated into the In₂O₃ lattice; with increasing Nb doping, the lattice constant decreased due to the ionic radius difference between Nb (64 pm) and In³⁺ (80 pm) plus Nb’s strong polarization effect. In electrical properties, Nb doping significantly improved conductivity: pure In₂O₃ had ~53.42 S/cm, reaching 272.07 S/cm (over 5x increase) at x = 0.005, which is attributed to Nb releasing free electrons and increasing the carrier concentration; though carrier mobility slightly decreased, carrier concentration growth dominated conductivity improvement. The absolute Seebeck coefficient decreased (from −185.24 μV/K to −120.12 μV/K at x = 0.005), but electrical conductivity increased and far exceeded the decrease in the square of the Seebeck coefficient, leading to a high-temperature power factor of 5.10 μW/(cm·K²). In terms of thermal properties, Nb doping reduced thermal conductivity and lattice thermal conductivity. Collectively, the x = 0.004 sample achieved a ZT value of 0.302 at 800 K, which is over 5 times higher than that of pure In₂O₃ (0.055 at 973 K); meanwhile, Nb doping enhanced the Vickers hardness, realizing the optimization of thermoelectric and mechanical properties. Full article

Liquid metal embrittlement (LME) occurs when a normally ductile alloy undergoes brittle fracture in contact with a liquid metal. The mechanisms behind LME remain unclear, and most of the models rely on post mortem analyses. In this work, we overcome this limitation by performing in situ scanning electron microscopy (SEM) notched micro-bending tests on α-brasses exposed to the gallium–indium eutectic (EGaIn) at room temperature, enabling real-time correlation between load–displacement curves and crack evolution during LME. In the Cu-30%Zn alloy, LME was observed only after prior plastic deformation and ductile crack growth, confirming that liquid metal did not influence early plasticity. A two-step experiment further showed that a pre-existing crack in contact with EGaIn, under continued loading, was sufficient to trigger brittle fracture. The Cu-20%Zn alloy displayed alternating ductile and brittle events, with brittle cracks propagating horizontally before arresting in undeformed zones, leading to stepped load–displacement curves. By contrast, pure Cu and Cu-15%Zn showed only ductile fracture despite continuous contact with EGaIn. These results demonstrate that LME in the Cu-Zn/EGaIn system acts during crack propagation rather than initiation. The present in situ SEM methodology provides direct evidence of fracture mechanisms and a framework for future experimental modeling comparisons. Full article

Indium, widely used in indium–tin oxide (ITO) coatings for liquid crystal displays (LCDs), is a scarce and strategically important metal with increasing demand. Recycling waste LCD panels offers an efficient secondary source to address supply risks and environmental concerns. In this study, a hydrometallurgical flow sheet was developed under mild conditions for indium (In) recovery. Leaching trials with sulphuric acid at varying concentrations, pulp densities, temperatures, and times showed that 5% H₂SO₄ (v/v) with 100 g/L pulp density at 60 °C for 30 min achieved ~98% dissolution of In, while minimizing the co-leaching of Al and Sn. Kinetic analysis indicated a diffusion-controlled mechanism for In dissolution with an activation energy of 21.2 kJ mol⁻¹. The leached liquor was further purified through solvent extraction by 20% Cyanex 921 (v/v), achieving optimum In extraction at pH 2.5 with an organic-to-aqueous phase ratio of 1/3, reaching equilibrium within 15 min. The McCabe–Thiele plot shown indicates the complete In extraction in two stages. FT-IR studies confirmed the In-extractant bonding at optimized conditions. 10% H₂SO₄ (v/v) was used for the stripping of In from the loaded organic, ensuring nearly complete back-transfer of indium with excellent phase separation. The integrated process yielded ~97% In recovery in stripping. The pure salt of Indium could be obtained by evaporation/crystallization of pure indium solution. The developed process has the potential to be transferred for commercial exploitation after scale-up and pilot trial. Full article

Visual impairments pose a significant global health challenge, and visual electrophysiological (EP) acquisition plays a pivotal role in diagnosing ophthalmic diseases. However, traditional electrodes still encounter limitations such as inadequate mechanical adaptability and reusability. This study proposes a stretchable and transparent electrode (STE) consisting of a conductive paste/indium tin oxide layer on a polymethyl methacrylate substrate. Leveraging an island–bridge design, the STE renders reliable performance even after being subjected to 1000 cycles of 25% lateral strain and 18% diagonal strain, exhibiting exceptional mechanical flexibility and realizing seamless attachment to soft tissue. Furthermore, optimized conductive paste layer thickness yields a signal-to-noise ratio comparable to commercial electrodes, achieving equivalent performance to Ag/AgCl electrodes in electroretinogram (ERG), electrooculography (EOG), and visual evoked potential (VEP) acquisition. The STE’s mechanical suitability and inconspicuous features hold significant potential for widespread clinical adoption in ophthalmic diagnostics and personalized eye healthcare, offering improved comfort, reusability, and diagnostic precision. Full article

We theoretically investigate the supercurrent and superconducting diode effect (SDE) in an Aharonov–Bohm (AB) interferometer sandwiched between two aluminium-based superconducting leads. The interferometer features a quantum dot (QD), which is created in an indium arsenide (InAs) semiconductor nanowire by local electrostatic gating, inserted in one of its arms and a magnetic flux threading through the ring structure. The magnetic flux breaks the system time-reversal symmetry by modulating the quantum phase difference between electronic transport through the QD path and the direct arm, which enhances constructive interference in one direction and destructive interference in the other. This leads to a discrepancy between the magnitudes of the forward and reverse critical supercurrents and is the core mechanism that induces the SDE. We demonstrate that the critical supercurrents exhibit Fano line shapes arising from the interference between discrete Andreev bound states in the QD and continuous states in the direct arm. It is found that when electron transport is dominated by the QD-containing path as compared to the direct arm path of the interferometer, the diode efficiency reaches a maximum, with values as high as 80%. In contrast, when the direct arm path dominates transport, the diode efficiency becomes weak. This attenuation is attributed to the participation of higher-order quantum interference processes, which disrupt the nonreciprocal supercurrent balance. Importantly, the proposed AB interferometer system has a relatively simple structure, and the realization of the SDE within it is feasible using current nano-fabrication technologies. Full article

Indium phosphide (InP) is a promising photoactive material for solar-driven hydrogen production owing to its optimal bandgap, high carrier mobility, and broad solar absorption. However, conventional InP fabrication relies on costly wafers and toxic precursors, limiting its scalability and sustainability. Here, we demonstrate a simple and environmentally friendly route to synthesize n-type InP thin-film photoanodes by phosphidating indium films prepared via doctor blade coating on ITO substrates, using NaH₂PO₂ as a phosphorus source. Structural and spectroscopic analyses (XRD, Raman, XPS, PL) confirmed the successful formation of crystalline InP with optimum quality at 425 °C. Photoelectrochemical measurements revealed a significant photocurrent density of 1.8 mA·cm⁻² under AM 1.5 illumination, with extended photoresponse into the near-infrared region. Mott–Schottky and EIS analyses indicated efficient charge separation, low transfer resistance, and unintentional n-type doping due to Sn diffusion from the ITO substrate. This facile and green synthesis route not only provides a scalable approach to III–V semiconductors but also highlights InP thin films as cost-effective and efficient photoanodes for sustainable solar hydrogen generation. Full article

Reliable power generation from solar cells is critical for spacecraft operation. High-energy laser irradiation poses a significant threat, as it can potentially cause irreversible damage to solar cells, which is difficult to detect remotely using conventional techniques such as radar or optical imaging. Spectral detection offers a potential approach through unique “spectral fingerprints,” but the spectral characteristics of laser-damaged solar cells remain insufficiently documented. This study investigates the scattering spectral characteristics of triple-junction GaAs (Gallium Arsenide) solar cells subjected to nanosecond pulsed laser irradiation to establish spectral signatures for damage assessment. GaAs solar cells were irradiated at varying energy densities. Bidirectional Reflectance Distribution Function (BRDF) spectra (400–1200 nm) were measured. A thin-film interference model was used to simulate damage effects by varying layer thicknesses, thereby interpreting experimental results. The results demonstrate that as the laser energy density increases from 0.12 to 2.96 J/cm², the number of absorption peaks in the visible range (400–750 nm) decreases from three to zero, and the oscillation in the near-infrared range vanishes completely, indicating progressive damage to the GaInP (Gallium Indium Phosphide) and GaAs layers. This study provides a spectral-based approach for remote assessment of laser-induced damage to solar cells, which is crucial for satellite health monitoring. Full article

This study investigates the influence of post-deposition thermal annealing temperature on the crystal structure, chemical composition, and electrical performance of solution-processed indium oxide (In₂O₃) thin films. Based on thermogravimetric analysis (TGA) of the precursor solution, annealing temperatures of 350, 450, and 550 °C were adopted. The resulting In₂O₃ films were characterized using ultraviolet–visible (UV–Vis) spectroscopy, atomic force microscopy (AFM), Raman spectroscopy, and Hall-effect measurements to evaluate their optical, morphological, crystalline polymorphism, and electrical properties. The results revealed that the film annealed at 450 °C exhibited a field-effect mobility of 4.28 cm²/V·s and an on/off current ratio of 2.15 × 10⁷. The measured hysteresis voltages were 3.11, 1.80, and 0.92 V for annealing temperatures of 350, 450, and 550 °C, respectively. Altogether, these findings indicate that an annealing temperature of 450 °C provides an optimal balance between the electrical performance and device stability for In₂O₃-based thin-film transistors (TFTs), making this condition favourable for high-performance oxide electronics. Full article

This work presents a novel Gallium Nitride (GaN) high-electron-mobility transistor (HEMT)-based ultraviolet (UV) photodetector architecture that integrates advanced material and structural design strategies to enhance detection performance and stability under room-temperature operation. This study is conducted as a fully numerical simulation using the Silvaco Atlas platform, providing detailed electrothermal and optoelectronic analysis of the proposed device. The device is constructed on a high-thermal-conductivity silicon carbide (SiC) substrate and incorporates an n-GaN buffer, an indium nitride (InN) channel layer for improved electron mobility and two-dimensional electron gas (2DEG) confinement, and a dual-passivation scheme combining silicon nitride (SiN) and hexagonal boron nitride (h-BN). A p-GaN layer is embedded between the passivation interfaces to deplete the 2DEG in dark conditions. In the device architecture, the metal contacts consist of a 2 nm Nickel (Ni) adhesion layer followed by Gold (Au), employed as source and drain electrodes, while a recessed gate embedded within the substrate ensures improved electric field control and effective noise suppression. Numerical simulations demonstrate that the integration of a hexagonal boron nitride (h-BN) interlayer within the dual passivation stack effectively suppresses the gate leakage current from the typical literature values of the order of ${10}^{-8}$ A to approximately ${10}^{-10}$ A, highlighting its critical role in enhancing interfacial insulation. In addition, consistent with previous reports, the use of a SiC substrate offers significantly improved thermal management over sapphire, enabling more stable operation under UV illumination. The device demonstrates strong photoresponse under 360 nm ultraviolet (UV) illumination, a high photo-to-dark current ratio (PDCR) found at approximately ${10}^6$, and tunable performance via structural optimization of p-GaN width between 0.40 μm and 1.60 μm, doping concentration from $5\times {10}^{16}$ ${\mathrm{cm}}^{-3}$ to $5\times {10}^{18}$ ${\mathrm{cm}}^{-3}$, and embedding depth between 0.060 μm and 0.068 μm. The results underscore the proposed structure’s notable effectiveness in passivation quality, suppression of gate leakage, and thermal management, collectively establishing it as a robust and reliable platform for next-generation UV photodetectors operating under harsh environmental conditions. Full article

We present a systematic study of the fundamental optical properties of indium selenide (InSe) single crystals over a temperature range of 17 K to 300 K. The high structural quality of the β-polytype crystals was confirmed through X-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy, demonstrating excellent crystallinity and a nearly stoichiometric In:Se ratio. The temperature-dependent absorption and photoluminescence (PL) spectra are characterized by a prominent free exciton (FX) resonance. At 17 K, the photoluminescence spectrum exhibits a distinct fine-structure splitting of the Wannier–Mott exciton, yielding a triplet state at 1.333 eV and a singlet state at 1.336 eV. Additionally, a biexciton (XX) is localized at an energy of 1.322 eV as confirmed by the nonlinear dependence of intensity on excitation power density. At low temperatures, the absorption spectrum exhibits the free exciton ground state (n = 1) at 1.338 eV together with the first excited state (n = 2) at 1.350 eV. We systematically tracked and analyzed the temperature evolution of these quasiparticle energies. These findings enhance our understanding of the intrinsic many-body interactions in high-quality InSe, providing essential parameters for advancing its applications in innovative optoelectronic and quantum light-emitting devices. Full article

Perfect absorbers operating in the terahertz (THz) band are key enablers for next-generation wireless systems. However, conventional metal–dielectric designs suffer from Ohmic losses and limited reconfigurability. Here, we propose an all-dielectric indium antimonide (InSb) cylindrical pillar metasurface that achieves near-unity absorption at $f_0=1.83$ THz with a high quality factor of $Q=72.3$. Critical coupling between coexisting electric and magnetic dipoles enables perfect impedance matching, while InSb’s low damping minimizes energy loss. The resonance is tunable via temperature and magnetic bias at sensitivities of $S_T\approx 2.8\mathrm{GHz}·{\mathrm{K}}^{-1}$, $S_B^{\mathrm{TE}}\approx -132.7\mathrm{GHz}·{\mathrm{T}}^{-1}$, and $S_B^{\mathrm{TM}}\approx -34.7\mathrm{GHz}·{\mathrm{T}}^{-1}$, respectively, without compromising absorption strength. At zero magnetic bias ($B=0$), the metasurface is polarization-independent under normal incidence; under magnetic bias ($B\ne 0$), it maintains near-unity absorbance for both TE and TM, while the resonance frequency becomes polarization-dependent. Additionally, the 90% absorptance bandwidth ($\Delta f_{A\ge 0.9}$) can be modulated from 8.3 GHz to 3.3 GHz with temperature, or broadened from 8.5 GHz to 14.8 GHz under magnetic bias. This allows gapless suppression of up to 14 consecutive 1 GHz-spaced channels. This standards-agnostic bandwidth metric illustrates dynamic spectral filtering for future THz links and beyond-5G/6G research. Owing to its sharp selectivity, dual-mode tunability, and metal-free construction, the proposed absorber offers a compact and reconfigurable platform for advanced THz filtering applications. Full article

The experimental study has been carried out using advanced computer vision methods in order to visualize the moment of excitation and further propagation of a non stationary isotropic domain in a hybrid aligned nematic (HAN) microsized volume under the effect of a laser beam focused on a bounding liquid crystal surface. It has been shown that, when the laser power exceeds a certain threshold value, in bulk of the HAN microvolume, an isotropic circular domain is formed. We also observed a structure of alternating concentric rings around the isotropic circular region, which increases with distance from the center of the isotropic domain. The formation of a sequence of rings in a polarizing microscopic image indicates the formation of a complex topology of the director field in the HAN cell under study. The following evolution of the texture can be represented by two modes. Firstly, the “fast” heating mode, which is responsible for the formation and explosive expansion of an isotropic zone in bulk of the HAN microvolume with characteristic time ${\tau }_1$ due to a laser spot heating on the upper indium tin oxide (ITO) layer. Secondly, the “slow” heating mode, when an isotropic zone and concentric rings slowly expand with characteristic time ${\tau }_2$ mainly due to the finite thermoconductivity of ITO layer. When the laser power significantly exceeds the threshold value, damped oscillations of the isotropic domain are observed. We also introduced the metrics that allows quantitatively estimate the behavior of texture observed. The results obtained form an experimental basis for further investigation of thermomechanical force appearing in the LC system with coupled gradients of temperature and director fields. Full article

This study investigates the morphological evolution of epitaxial indium antimonide (InSb) nanowires (NWs) grown via chemical vapor deposition (CVD). We systematically explored the influence of key growth parameters—temperature (300 °C to 480 °C), source material composition, gold (Au) nanoparticle catalyst size, and growth duration—on the resulting NW morphology, specifically focusing on NW length and tapering. Our findings reveal that the competition between axial and radial growth modes, which are governed by different growth mechanisms, dictates the final nanowire shape. An optimal growth condition was identified that yields straight and minimally tapered InSb NWs. High-resolution transmission electron microscopy (TEM) confirmed that these nanowires grow preferentially along the <110> direction, and electrical characterization via field-effect transistor (NW-FET) measurements showed that they are n-type semiconductors. Full article

This work presents a low-cost and scalable method for fabricating thin-film transistors (TFTs) using a single-step, 3D-printed shadow mask approach. Room temperature growth of both aluminum-doped zinc oxide (AZO) thin film was used as the semiconductor channel, and zirconium oxide (ZrO₂) as the high-k dielectric, and the films were never exposed to any post-annealing treatment. Structural and morphological characterization confirmed smooth, compact films with stable dielectric behavior. Electrical measurements revealed a field-effect mobility of 13.1 cm²/V·s, a threshold voltage of ~4.1 V, and an on/off ratio of ~10⁴, validating effective gate modulation and drain current saturation. The off-state current, estimated from AZO conductivity measurements, was ~10⁻¹⁰ A, while the on-state current reached ~10⁻⁶ A. Benchmarking against state-of-the-art devices shows that these transistors rival ALD-processed IGZO TFTs and significantly outperform reported indium-free ZnO/AZO devices, while avoiding scarce indium and costly high-temperature or photolithographic processing. These findings establish 3D-printed shadow masks as a practical alternative to conventional lithography for oxide TFT fabrication. The method offers high device performance with simplified, indium-free, and room-temperature processing, underscoring its potential for scalable, transparent, and flexible electronics. Full article

This study presents a novel approach to analysing the early stages of the combustion process by measuring the surface temperature of a kerosene droplet from its point of ignition through to its evaporation. An indium arsenide antimonide (InAsSb) photodiode-based infrared radiation thermometer (IRT), operating between 3 μm and 11 μm in wavelength, was designed to enable non-contact, low-temperature sensing with an acquisition time of 500 μs. Integrated with a data acquisition unit (DAQ), the instrument captures the transient combustion stages occurring below the droplet’s boiling point of 300 °C. The instrument was assessed against industry standards and demonstrated a measurement uncertainty of ±2 °C, confirming suitability within the performance bounds of commercial instrumentation. The IRT was deployed to measure the temperature of a kerosene droplet within an enclosed combustion chamber upon ignition, in direct comparison with a contact thermocouple. The instrument demonstrated its capability to measure the droplet’s surface temperature changes throughout its early-stage combustion. Furthermore, the wavelength specificity of the IRT eliminates thermal interference from the subsequent flame, a capability which contact thermocouples lack, thereby enabling measurement of the droplet’s temperature in isolation. This study focuses on single-droplet Jet A kerosene combustion under controlled conditions, using a transferable methodology adaptable to other fuels and environments. It supports the use of IRT for non-contact temperature measurement of fuel droplets and early-stage combustion, aiding fuel characterisation and the development of future fuels such as SAF. Full article