Search Results (53)

Nanoparticle superlattices, periodic assemblies of nanoscale building blocks, offer opportunities to tailor mechanical behavior through controlled lattice geometry and interparticle interactions. Here, classical molecular dynamics simulations were performed to investigate the compressive responses of copper nanoparticle superlattices with face-centered cubic (FCC), hexagonal close-packed (HCP), body-centered cubic (BCC), and simple cubic (SC) arrangements, as well as disordered assemblies. The flow stresses span 0.5–1.5 GPa. Among the studied configurations, the FCC and HCP superlattices exhibit the highest strengths (~1.5 GPa), followed by the disordered assembly (~1.0 GPa) and the SC structure (~0.8 GPa), while the BCC superlattice exhibits the lowest strength (~0.5 GPa), characterized by pronounced stress drops and recoveries resulting from interfacial sliding. Atomic-scale analyses reveal that plastic deformation is governed by two coupled geometric factors: (i) the number of interparticle contact patches, controlling the density of dislocation sources, and (ii) their orientation relative to the loading axis, which dictates stress transmission and slip activation. A combined parameter integrating particle coordination number and contact orientation is proposed to rationalize the structure-dependent strength, providing mechanistic insight into the deformation physics of metallic nanoparticle assemblies. Full article

AlGaN-based high-electron-mobility transistors are critical for next-generation power electronics and radio-frequency applications, yet achieving stable enhancement-mode operation with a high threshold voltage remains a key challenge. In this work, we designed p-AlGaN superlattices with different structures and performed energy band structure simulations using the device simulation software Silvaco. The results demonstrate that thin barrier structures lead to reduced acceptor incorporation, thereby decreasing the number of ionized acceptors, while facilitating vertical hole transport. Superlattice samples with varying periodic thicknesses were grown via metal-organic chemical vapor deposition, and their crystalline quality and electrical properties were characterized. The findings reveal that although gradient-thickness barriers contribute to enhancing hole concentration, the presence of thick barrier layers restricts hole tunneling and induces stronger scattering, ultimately increasing resistivity. In addition, we simulated the structure of the enhancement-mode HEMT with p-AlGaN as the under-gate material. Analysis of its energy band structure and channel carrier concentration indicates that adopting p-AlGaN superlattices as the under-gate material facilitates achieving a higher threshold voltage in enhancement-mode HEMT devices, which is crucial for improving device reliability and reducing power loss in practical applications such as electric vehicles. Full article

Metal halide perovskite (MHP) nanocrystals (NCs) offer great potential for high-efficiency optoelectronic devices; however, they suffer from structural softness and chemical instability. Doping MHP NCs can overcome this issue. In this work, we synthesize Mn-doped methylammonium lead bromide (MAPbBr₃) NCs using the ligand-assisted reprecipitation method and investigate their structural and optical stability. X-ray diffraction confirms Mn²⁺ substitution at Pb²⁺ sites and lattice contraction. Photoluminescence (PL) measurements show a blue shift, significant PL quantum yield enhancement, reaching 72% at 17% Mn²⁺ doping, and a 34% increase compared to undoped samples, attributed to effective defect passivation and reduced non-radiative recombination, supported by time-resolved PL data. Mn²⁺ doping also improves long-term stability under ambient conditions. Low-temperature PL reveals the crystal-phase transitions of perovskite NCs and Mn-doped NCs to be somewhat different than those of pure MAPbBr₃. Mn²⁺ incorporation into perovskite promotes self-assembly into superlattices with larger crystal sizes, better structural order, and stronger inter-NC coupling. These results demonstrate that Mn²⁺ doping enhances both optical performance and structural robustness, advancing the potential of MAPbBr₃ NCs for stable optoelectronic applications. Full article

An electric field applied to the Bernal-stacked bilayer graphene opens an energy gap; its reversal in some regions creates domain walls and leads to the appearance of one-dimensional chiral gapless states localized at the walls. Here, we investigate the energy structure of bilayer graphene with superlattice potential defined by an external electric field. The calculations are performed within an atomistic π-electron tight-binding approximation. We study one-dimensional and two-dimensional superlattices formed by arrays of electric-field walls in the zigzag and armchair directions and investigate different field polarizations. Chiral gapless states discretize due to the superlattice potential and transform into minibands in the energy gap. As the main result, we show that the minibands can cross at the Fermi level for some field polarizations. This leads to a new kind of two-dimensional gapless states of topological character that form Dirac-like cones at the crossing points. This also has application potential: changing the field polarization can close the energy gap and change the character of the superlattice from semiconducting to metallic. Full article

In this work, we demonstrated the epitaxial growth of a gallium nitride (GaN) buffer structure on 200 mm SOI (silicon-on-insulator) substrates. This epitaxial layer is grown using a reversed stepped superlattice buffer (RSSL), which is composed of two superlattice (SL) layers with different Al component ratios stacked in reverse order. The upper layer, with a higher Al component ratio, introduces tensile stress instead of accumulative compressive stress and reduces the in situ curvature of the wafer, thereby achieving a well-controlled wafer bow ≤ ±50 µm for a 3.3 µm thick buffer. Thanks to the compliant SOI substrate, good crystal quality of the grown GaN layers was obtained, and a breakdown voltage of 750 V for a 3.3 µm thick GaN buffer was achieved. The breakdown field strength of the epitaxial GaN buffer layer on the SOI substrate is estimated to be ~2.27 MV/cm, which is higher than the breakdown field strength of the GaN-on-Si epitaxial buffer layer. This RSSL buffer also demonstrated a low buffer dispersion of less than 10%, which is good enough for the further processing of device and circuit fabrication. A D-mode GaN HEMT was fabricated on this RSSL buffer, which showed a good on/off ratio of ~10⁹ and a breakdown voltage of 450 V. Full article

Recently, the quest for high-Tc superconductors has evolved from the trial-and-error methodology to the growth of nanostructured artificial high-Tc superlattices (AHTSs) with tailor-made superconducting functional properties by quantum design. Here, we report the growth by molecular beam epitaxy (MBE) of a superlattice of Mott insulator metal interfaces (MIMIs) made of nanoscale superconducting layers of quantum confined-space charge in the Mott insulator La₂CuO₄ (LCO), with thickness L intercalated by normal metal La_1.55Sr_0.45CuO₄ (LSCO) with period d. The critical temperature shows the superconducting dome with Tc as a function of the geometrical parameter L/d showing the maximum at the magic ratio L/d = 2/3 where the Fano–Feshbach resonance enhances the superconducting critical temperature. The normal state transport data of the samples at the top of the superconducting dome exhibit Planckian T-linear resistivity. For L/d > 2/3 and L/d < 2/3, the heterostructures show a resistance following Kondo universal scaling predicted by the numerical renormalization group theory for MIMI nanoscale heterostructures. We show that the Kondo temperature, T_K, and the Kondo scattering amplitude, R_0K, vanish at L/d = 2/3, while T_K and R_0K increase at both sides of the superconducting dome, indicating that the T-linear resistance regime competes with the Kondo proximity effect in the normal phase of MIMIs. Full article

Helium ions implanted into metals can form ordered bubbles that are isomorphic to the host lattice. While long-range elastic interactions are generally believed to drive bubble superlattice formation, the interactions between individual helium solutes are not yet fully understood. Our first-principles calculations reveal that in molybdenum, Friedel oscillations induced by individual helium atoms generate potential barriers and wells that influence helium pairing and clustering at short He-He distances. These repulsive and attractive interactions at high concentrations provide thermodynamic driving forces that align randomly distributed helium atoms into Mo-He superlattices. Friedel oscillations may have broad impacts on solute–solute interactions in alloys. Full article

Transition metal dichalcogenides (TMDCs), represented by MX₂ (where M = Mo, W and X = S, Se, and Te), and more recently, their moiré superlattices (i.e., formed by superimposing layers of TMDCs with different rotation angles) have attracted considerable interest due to their excellent physical properties and unique nanoscale functionalities. Compared to graphene, the literature indicates that TMDCs offer a competitive advantage in optoelectronic technologies, primarily owing to their compositionally controlled non-zero bandgap. These two-dimensional (2D) nanostructured single or multiple layers exhibit remarkable properties that differ from their bulk counterparts. Moreover, stacking different TMDC monolayers also forms heterostructures and introduces unique quantum effects and extraordinary electronic properties, which is particularly promising for next-generation optoelectronic devices and photo(electro)catalytic applications. Therefore, in this review, we also highlight the new possibilities in the formation of 2D/2D heterostructures of MX₂-based materials with moiré patterns and discuss the main critical challenges related to the synthesis and large-scale applications of layered MX₂ and MX₂-based composites to spur significant advances in emerging optoelectronic and photo(electro)catalytic applications. Full article

First, a recently developed eigenfunction expansion technique, based in part on the separation of the thickness variable and partly utilizing a modified Frobenius-type series expansion technique in conjunction with the Eshelby–Stroh formalism, is employed to derive three-dimensional singular stress fields in the vicinity of the front of an interfacial crack weakening an infinite bicrystalline superlattice plate, made of orthorhombic (cubic, hexagonal, and tetragonal serving as special cases) phases of finite thickness and subjected to the far-field extension/bending, in-plane shear/twisting, and anti-plane shear loadings, distributed through the thickness. Crack-face boundary and interface contact conditions as well as those that are prescribed on the top and bottom surfaces of the bicrystalline superlattice plate are exactly satisfied. It also extends a recently developed concept of the lattice crack deflection (LCD) barrier to a superlattice, christened superlattice crack deflection (SCD) energy barrier for studying interfacial crack path instability, which can explain crack deflection from a difficult interface to an easier neighboring cleavage system. Additionally, the relationships of the nature (easy/easy, easy/difficult, or difficult/difficult) interfacial cleavage systems based on the present solutions with the structural chemistry aspects of the component phases (such as orthorhombic, tetragonal, hexagonal, as well as FCC (face-centered cubic) transition metals and perovskites) of the superlattice are also investigated. Finally, results pertaining to the through-thickness variations in mode I/II/III stress intensity factors and energy release rates for symmetric hyperbolic sine-distributed loads and their skew-symmetric counterparts that also satisfy the boundary conditions on the top and bottom surfaces of the bicrystalline superlattice plate under investigation also form an important part of the present investigation. Full article

In order to shift the light emission of nitride quantum structures towards the red color, the technological problem of low In incorporation in InGaN−based heterostructures has to be solved. To overcome this problem, we consider superlattices grown on InGaN buffers with different In content. Based on the comparison of the calculated ab initio superlattice band gaps with the photoluminescence emission energies obtained from the measurements on the specially designed samples grown by metal-organic vapor phase epitaxy, it is shown that by changing the superlattice parameters and the composition of the buffer structures, the light emission can be shifted to lower energies by about 167 nm (0.72 eV) in comparison to the case of a similar type of superlattices grown on GaN substrate. The importance of using superlattices to achieve red emission and the critical role of the InGaN buffer are demonstrated. Full article

This article discusses the micromechanical properties and true microhardness determination of nanostructured tribological coatings (NTCs) based on a multilayered alternating nitride/carbonitride bilayer substructure for transition metals. The constituent nitride/carbonitride bilayers in the superlattice structure of the NTC were alloyed with refractory metals, denoted as Me = Me₁ or Me₂= Cr, Hf, Nb, W, and Zr. The resulting NTC coatings were deposited onto 100Cr6 steel substrates using an advanced physical vapor deposition (PVD) technique, referred to here as high-power ion-plasma magnetron sputtering (HiPIPMS). The comprising crystalline nanometer-scale TiAlSiMe₁-N/TiMe₂-CN nanoparticles strengthened by Me additives significantly increased the NTC microhardness to over 3200 HV. The primary focus of this research was to determine the true microhardness of the NTC film samples. The apparent microhardness (H_a) of the film/substrate system for various NTC samples was measured during microindentation testing using the Vickers method. Nine NTC samples were tested, each generating a corresponding microindentation dataset containing between 430 and 640 imprints, depending on the specific NTC sample. These datasets were analyzed using three distinct empirical approaches: (i) the inverse power-law model (IPL-Model), (ii) the sigmoid-like decay model (SLD-Model), and (iii) the error function model (ERF-Model). The observed solid correlation between the proposed models and experiments suggests that the true microhardness estimates (H_f) obtained through the empirical mathematical modeling approach are reliable. Full article

Superlattices (SLs) comprising layers of a soft ferromagnetic metal La_2/3Sr_1/3MnO₃ (LSMO) with in-plane (IP) magnetic easy axis and a hard ferromagnetic insulator La₂MnCoO₆ (LMCO, out-of-plane anisotropy) were grown on SrTiO₃ (100)(STO) substrates by a metalorganic aerosol deposition technique. Exchange spring magnetic (ESM) behavior between LSMO and LMCO, manifested by a spin reorientation transition of the LSMO layers towards perpendicular magnetic anisotropy below T_SR = 260 K, was observed. Further, 3ω measurements of the [(LMCO)₉/(LSMO)₉]₁₁/STO(100) superlattices revealed extremely low values of the cross-plane thermal conductivity κ(300 K) = 0.32 Wm⁻¹K⁻¹. Additionally, the thermal conductivity shows a peculiar dependence on the applied IP magnetic field, either decreasing or increasing in accordance with the magnetic disorder induced by ESM. Furthermore, both positive and negative magnetoresistance were observed in the SL in the respective temperature regions due to the formation of 90°-Néel domain walls within the ESM, when applying IP magnetic fields. The results are discussed in the framework of electronic contribution to thermal conductivity originating from the LSMO layers. Full article

While the search for new high-temperature superconductors had been driven by the empirical “trials and errors” method for decades, we now report the synthesis of Artificial High-T_c Superlattices (AHTS) designed by quantum mechanics theory at the nanoscale. This discovery paves the way for engineering a new class of high-temperature superconductors, following the predictions of the Bianconi Perali Valletta (BPV) theory recently implemented in 2022 by Mazziotti et al. including Rashba spin-orbit coupling to create nanoscale AHTS composed of quantum wells. The high-T_c superconducting properties within these superlattices are controlled by a conformational parameter of the superlattice geometry, specifically, the ratio L/d which represents the thickness of La₂CuO₄ layers (L) relative to the superlattice period (d). Using molecular beam epitaxy, we have successfully grown numerous AHTS samples. These samples consist of initial layers of stoichiometric La₂CuO₄ units with a thickness L, doped by interface space charge, and intercalated with second layers of non-superconducting metallic material, La_1.55Sr_0.45CuO₄ with thickness denoted as W = d − L. This configuration forms a quantum superlattice with periodicity d. The agreement observed between the experimental dependence T_c (the superconducting transition temperature) versus L/d ratio and the predictions of the BPV theory for AHTS in the form of the superconducting dome validates the hypothesis that the superconducting dome arises from the Fano–Feshbach or shape resonance in multigap superconductivity driven by quantum nanoscale confinement. Full article

This research presents the optimization and proposal of P- and N-type 3-stacked Si_0.8Ge_0.2/Si strained super-lattice FinFETs (SL FinFET) using Low-Pressure Chemical Vapor Deposition (LPCVD) epitaxy. Three device structures, Si FinFET, Si_0.8Ge_0.2 FinFET, and Si_0.8Ge_0.2/Si SL FinFET, were comprehensively compared with HfO₂ = 4 nm/TiN = 80 nm. The strained effect was analyzed using Raman spectrum and X-ray diffraction reciprocal space mapping (RSM). The results show that Si_0.8Ge_0.2/Si SL FinFET exhibited the lowest average subthreshold slope (SS_avg) of 88 mV/dec, the highest maximum transconductance (G_{m, max}) of 375.2 μS/μm, and the highest ON–OFF current ratio (I_ON/I_OFF), approximately 10⁶ at V_OV = 0.5 V due to the strained effect. Furthermore, with the super-lattice FinFETs as complementary metal–oxide–semiconductor (CMOS) inverters, a maximum gain of 91 v/v was achieved by varying the supply voltage from 0.6 V to 1.2 V. The simulation of a Si_0.8Ge_0.2/Si super-lattice FinFET with the state of the art was also investigated. The proposed Si_0.8Ge_0.2/Si strained SL FinFET is fully compatible with the CMOS technology platform, showing promising flexibility for extending CMOS scaling. Full article

In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, larger size, and compatibility with CMOS-fab processes. As a result, several improvements have been proposed in terms of epitaxy structure and high electron mobility transistor (HEMT) process, particularly in the enhancement mode (E-mode). IMEC has made significant strides using a 200 mm 8-inch Qromis Substrate Technology (QST^®) substrate for breakdown voltage to achieve 650 V in 2020, which was further improved to 1200 V by superlattice and carbon-doped in 2022. In 2016, IMEC adopted VEECO metal-organic chemical vapor deposition (MOCVD) for GaN on Si HEMT epitaxy structure and the process by implementing a three-layer field plate to improve dynamic on-resistance (R_ON). In 2019, Panasonic HD-GITs plus field version was utilized to effectively improve dynamic R_ON. Both reliability and dynamic RON have been enhanced by these improvements. Full article