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Keywords = n−MOSFET current mirrors

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13 pages, 1554 KB  
Article
Charge Trapping Effects on n−MOSFET Current Mirrors Under TID Radiation
by Dorsaf Aguir, Sedki Amor, Laurent A. Francis and Mohsen Machhout
Micromachines 2025, 16(9), 1064; https://doi.org/10.3390/mi16091064 - 20 Sep 2025
Viewed by 728
Abstract
This study aims to evaluate the effects of total ionizing dose (TID) radiation on the performance of n−MOSFET current mirrors. We propose an ovel experimental approach to analyze the interaction between charge trapping in the MOSFET gate oxide and the resulting current mirror degradation [...] Read more.
This study aims to evaluate the effects of total ionizing dose (TID) radiation on the performance of n−MOSFET current mirrors. We propose an ovel experimental approach to analyze the interaction between charge trapping in the MOSFET gate oxide and the resulting current mirror degradation by subjecting devices to TID doses from 50 krad(Si) to 300 krad(Si) using a 60Co gamma source Experimental data show that threshold voltage shifts by up to 1.31 V and transconductance increases by 27%. This degradation leads to this a reduction of more than 10% in current mirror output accuracy occurs at the highest dose. These quantitative criteria establish a clear benchmark for assessing the impact of TID on current mirror performance. These effects are attributed to positive charge trapping in the gate oxide and at the Si–SiO2 interface induced by ionizing radiation. This study focuses exclusively on radiation effects; electrical stress phenomena such as over−voltage or electrostatic discharge (ESD) are not addressed. The results highlight the critical importance of accounting for TID effects when designing high−performance n−MOSFET current mirrors for radiation−hardened applications. Full article
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12 pages, 7899 KB  
Article
A Modified Current-Mode VCSEL Driver for Short-Range LiDAR Sensor Applications in 180 nm CMOS
by Juntong Li, Yeojin Chon, Shinhae Choi and Sung-Min Park
Photonics 2024, 11(9), 868; https://doi.org/10.3390/photonics11090868 - 16 Sep 2024
Cited by 1 | Viewed by 1966
Abstract
This paper presents a modified current-mode vertical-cavity surface-emitting laser (VCSEL) driver as a transmitter for short-range light detection and ranging (LiDAR) sensors, where a stable bias generator is suggested with a regulated cascode current mirror circuit to provide the bias current of 1 [...] Read more.
This paper presents a modified current-mode vertical-cavity surface-emitting laser (VCSEL) driver as a transmitter for short-range light detection and ranging (LiDAR) sensors, where a stable bias generator is suggested with a regulated cascode current mirror circuit to provide the bias current of 1 mA with a trivial deviation of 5.4%, even at the worst-case process–voltage–temperature (PVT) variations. Also, a modified current-steering logic circuit is exploited with N-type MOSFET (NMOS) switches to deliver the modulation currents of 0.1~10 mApp to the VCSEL diode simultaneously, with no overshoot distortions. Post-layout simulations of the modified current-mode VCSEL driver (m-CMVD), using 180 nm CMOS technology, demonstrate very large and clean output pulses with significantly reduced signal distortions. Hereby, the VCSEL diode is transformed into an equivalent circuit with a 1.6 V DC voltage and a 50 Ω resistor for circuit simulations. The proposed m-CMVD consumes a maximum of 11 mW from a 3.3 V supply voltage and the chip core occupies an area of 0.196 mm2. Full article
(This article belongs to the Special Issue Semiconductor Lasers: Innovations, Challenges, and Future Perspectives)
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