Search Results (6)

Aluminum nitride (AlN), diamond, and β-phase gallium oxide (β-Ga₂O₃) belong to the family of ultra-wide bandgap (UWBG) semiconductors and exhibit remarkable properties for future power and optoelectronic applications. Compared to conventional wide bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN), they demonstrate clear advantages in terms of high-voltage, high-temperature, and high-frequency operation, as well as extremely high breakdown fields. In this work, numerical simulations are performed to evaluate and compare the radiative responses of AlN, diamond, and β-Ga₂O₃ when exposed to neutron irradiation covering the full atmospheric spectrum at sea level, from 1 meV to 10 GeV. The Geant4 simulation framework is used to model neutron interactions with the three materials, focusing on single-particle events that may be triggered. A detailed comparison is conducted, particularly concerning the generation of secondary charged particles and their distributions in energy, linear energy transfer (LET), and range given by SRIM. The contribution of the ¹⁴N(n,p)¹⁴C reaction in AlN is also specifically investigated. In addition, the study examines the consequences of these interactions in terms of electron-hole pair generation and charge deposition, and discusses the implications for the radiation sensitivity of these materials when exposed to atmospheric neutrons. Full article

Semiconductors characterized by ultrawide bandgaps (UWBGs), exceeding the SiC bandgap of 3.2 eV and the GaN bandgap of 3.4 eV, are currently under focus for applications in high-power and radio-frequency (RF) electronics, as well as in deep-ultraviolet optoelectronics and extreme environmental conditions. These semiconductors offer numerous advantages, such as a high breakdown field, exceptional thermal stability, and minimized power losses. This study used numerical simulation to investigate, at the material level, the single-particle radiation response of various UWBG semiconductors, such as aluminum gallium nitride alloys (Al_xGa_1−xN), diamond, and β-phase gallium oxide (β-Ga₂O₃), when exposed to ground-level neutrons. Through comprehensive Geant4 simulations covering the entire spectrum of atmospheric neutrons at sea level, this study provides an accurate comparison of the neutron radiation responses of these UWBG semiconductors focusing on the interaction processes, the number and nature of secondary ionizing products, their energy distributions, and the production of electron–hole pairs at the origin of single-event effects (SEEs) in microelectronics devices. Full article

In this work, the radiation response of bulk GaN and Ga₂O₃ materials exposed to ground-level neutrons is studied by Geant4 numerical simulation, considering the whole atmospheric neutron spectrum at sea level, from thermal to high energies (GeV). The response of the two materials is compared in terms of the number and type of interactions and the nature of the secondary products produced, particularly in nuclear reactions. Our results highlight the importance of ¹⁴N(n,p)¹⁴C neutron capture in the radiation response of GaN, leading to large differences in the behavior of the two materials in terms of susceptibility to thermal and intermediate-energy (below 1 MeV) neutrons. Full article

This numerical simulation work investigates the basic physical mechanisms of single events induced in a target layer composed of silicon carbide exposed to natural radiation with atmospheric neutrons at the terrestrial level. Using direct calculations and extensive Geant4 simulations, this study provides an accurate investigation in terms of nuclear processes, recoil products, secondary ion production and fragment energy distributions. In addition, the thorough analysis includes a comparison between the responses to neutron irradiation of silicon carbide, carbon (diamond) and silicon targets. Finally, the consequences of these interactions in terms of the generation of electron–hole pairs, which is a fundamental mechanism underlying single-event transient effects at the device or circuit level, are discussed in detail. Full article

Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga${}_2$O${}_3$) and gallium nitride (GaN), and the converter layer materials are boron carbide (B${}_4$C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research. Full article

The early advances in neutron scattering at the Chalk River Laboratories of Atomic Energy of Canada are recorded. From initial nuclear physics measurements at the National Research Experimental (NRX) reactor came the realization that, with the flux available and improvements in monochromator technology, direct measurements of the normal modes of vibrations of solids and the structure and dynamics of liquids would be feasible. With further flux increases at the National Research Universal (NRU) reactor, the development of the triple-axis crystal spectrometer, and the invention of the constant-Q technique, the fields of lattice dynamics and magnetism and their interpretation in terms of the long-range forces between atoms and exchange interactions between spins took a major step forward. Experiments were performed over a seven-year period on simple metals such as potassium, complex metals such as lead, transition metals, semiconductors, and alkali halides. These were analyzed in terms of the atomic forces and demonstrated the long-range nature of the forces. The first measurements of spin wave excitations, in magnetite and in the 3D metal alloy CoFe, also came in this period. The first numerical estimates of the superfluid fraction of liquid helium II came from extensive measurements of the phonon–roton and multiphonon parts of the inelastic scattering. After the first two decades, neutron experiments continued at Chalk River until the shut-down of the NRU reactor in 2018 and the disbanding of the neutron effort in 2019, seventy years after the first experiments. Full article