Search Results (12)

This work explores the dispersed heterojunction of tris-(8-hydroxyquinoline) aluminum (AlQ₃) and 8-hydroxyquinoline zinc (ZnQ₂) with tetracyanoquinodimethane (TCNQ) and 2,6-diaminoanthraquinone (DAAq). Thin films of these organic semiconductors were deposited and analyzed, with their structures calculated with the B3PW91/6-31G** method. The optimized structure for AlQ₃-TCNQ, AlQ₃-DAAq, is achieved by means of three hydrogen bonds, whereas for ZnQ₂-DAAq, two hydrogen interactions are predicted. These structures were recalculated including the GD3 dispersion term. A stable ordering was also achieved for AlQ₃-TCNQ-GD3, AlQ₃-DAAq-GD3, and ZnQ₂-DAAq-GD3 with four and two hydrogen contacts for the former and the two latter, respectively. Infrared (IR) and UV-visible spectroscopy confirmed these theoretical predictions, in addition to obtaining the optical band gap for the films. The optical band gap values ranged between 1.62 and 2.97 eV (theoretical) and between 2.46 and 2.87 eV (experimental). Additional optical parameters and electrical behavior were obtained, which indicates the potential of the films to be used as organic semiconductors. All three films showed transmittance above 76%, which also broadens the range of applications in electrodes, transparent transistors, or photovoltaic cells. Devices fabricated using these materials displayed ohmic electrical behavior, with peak current values between 2 × 10⁻³ and 6 × 10⁻³ A. Full article

In the dynamic field of photovoltaic technology, the pursuit of efficiency and sustainability has led to continuous novelty, shaping the landscape of solar energy solutions. One of the key elements affecting the efficiency of photovoltaic cells of II^nd and III^rd generation is the presence of transparent conductive oxide (TCO) layers, which are key elements impacting the efficiency and durability of solar panels, especially for DSSC, CdTe, CIGS (copper indium gallium diselenide) or organic, perovskite and quantum dots. TCO with low electrical resistance, high mobility, and high transmittance in the VIS–NIR region is particularly important in DSSC, CIGS, and CdTe solar cells, working as a window and electron transporting layer. This layer must form an ohmic contact with the adjacent layers, typically the buffer layer (such as CdS or ZnS), to ensure efficient charge collection Furthermore it ensures protection against oxidation and moisture, which is especially important when transporting the active cell structure to further process steps such as lamination, which ensures the final seal. Transparent conductive oxide layers, which typically consist of materials such as indium tin oxide (ITO) or alternatives such as fluorine-doped tin oxide (FTO), serve dual purposes in photovoltaic applications. Primarily located as the topmost layer of solar cells, TCOs play a key role in transmitting sunlight while facilitating the efficient collection and transport of generated electrical charges. This complex balance between transparency and conductivity highlights the strategic importance of TCO layers in maximizing the performance and durability of photovoltaic systems. As the global demand for clean energy increases and the photovoltaic industry rapidly develops, understanding the differential contribution of TCO layers becomes particularly important in the context of using PV modules as building-integrated elements (BIPV). The use of transparent or semi-transparent modules allows the use of building glazing, including windows and skylights. In addition, considering the dominant position of the Asian market in the production of cells and modules based on silicon, the European market is intensifying work aimed at finding a competitive PV technology. In this context, thin-film, organic modules may prove competitive. For this purpose, in this work, we focused on the electrical parameters of two different thicknesses of a transparent FTO layer. First, the influence of the FTO layer thickness on the transmittance over a wide range was verified. Next, the chemical composition was determined, and key electrical parameters, including carrier mobility, resistivity, and the Hall coefficient, were determined. Full article

Contact scaling is a major challenge in nano complementary metal–oxide–semiconductor (CMOS) technology, as the surface roughness, contact size, film thicknesses, and undoped substrate become more problematic as the technology shrinks to the nanometer range. These factors increase the contact resistance and the nonlinearity of the current–voltage characteristics, which could limit the benefits of the further downsizing of CMOS devices. This review discusses issues related to the contact size reduction of nano CMOS technology and the validity of the Schottky junction model at the nanoscale. The difficulties, such as the limited doping level and choices of metal for band alignment, Fermi-level pinning, and van der Waals gap, in achieving transparent ohmic contacts with emerging two-dimensional materials are also examined. Finally, various methods for improving ohmic contacts’ characteristics, such as two-dimensional/metal van der Waals contacts and hybrid contacts, junction doping technology, phase and bandgap modification effects, buffer layers, are highlighted. Full article

This paper investigates the possibility of using a nanolaminate TiO₂/Ag/TiO₂ structure as a transparent conductive coating on GaAs solar cells. A novel result is that this structure forms an Ohmic contact to Al-rich AlGaAs, which is used as a “window” layer in GaAs-based solar cells. The TiO₂/Ag/TiO₂ structure is deposited by RF magnetron sputtering at room temperature. This nanolaminate coating has good optical and electrical properties: a high transmittance of 94% at 550 nm, a sheet resistance of 7 Ω/sq, and a figure of merit (FOM) of 105 × 10⁻³ Ω⁻¹. These properties are the result of the presence of a discontinuous layer of Ag between two thin layers of TiO₂. The morphology of a discontinuous layer of Ag nanogranules is confirmed by the observation of a cross-section of a sample with high-resolution transmission electron microscopy (HRTEM) and EDX analyses. Current–voltage diode characteristics of GaAs solar cells measured under standard test illumination at 1000 W/m² are analyzed. The formation of an Ohmic contact is explained by the Fermi-level pinning effect caused by nanosized Ag particles in the nanolaminate TiO₂/Ag/TiO₂ structure. The obtained results demonstrate a new application of oxide−metal−oxide (OMO) coatings as Ohmic contacts to III-V compound semiconductors. Full article

In this study, the bipolar switching properties and electrical conduction behaviors of the ITO thin films RRAM devices were investigated. For the transparent RRAM devices structure, indium tin oxide thin films were deposited by using the RF magnetron sputtering method on the ITO/glass substrate. For the ITO/ITO_X/ITO/glass (MIM) structure, an indium tin oxide thin film top electrode was prepared to form the transparent RRAM devices. From the experimental results, the 10² On/Off memory ratio and bipolar switching cycling properties for set/reset stable states were found and discussed. All transparent RRAM devices exhibited the obvious memory window and low set voltage for the switching times of 120 cycles. The electrical transport mechanisms were dominated by the ohmic contact and space charge limit conduction (SCLC) models for set and reset states. Finally, the transmittances properties of the transparent ITO/ITO_X/ITO RRAM devices for the different oxygen growth procedures were about 90% according to the UV–Vis spectrophotometer for the visible wavelength range. Full article

Silver nanowires (Ag-NWs), which possess a high aspect ratio with superior electrical conductivity and transmittance, show great promise as flexible transparent electrodes (FTEs) for future electronics. Unfortunately, the fabrication of Ag-NW conductive networks with low conductivity and high transmittance is a major challenge due to the ohmic contact resistance between Ag-NWs. Here we report a facile method of fabricating high-performance Ag-NW electrodes on flexible substrates. A 532 nm nanosecond pulsed laser is employed to nano-weld the Ag-NW junctions through the energy confinement caused by localized surface plasmon resonance, reducing the sheet resistance and connecting the junctions with the substrate. Additionally, the thermal effect of the pulsed laser on organic substrates can be ignored due to the low energy input and high transparency of the substrate. The fabricated FTEs demonstrate a high transmittance (up to 85.9%) in the visible band, a low sheet resistance of 11.3 Ω/sq, high flexibility and strong durability. The applications of FTEs to 2D materials and LEDs are also explored. The present work points toward a promising new method for fabricating high-performance FTEs for future wearable electronic and optoelectronic devices. Full article

Silver nanowire (AgNWs) transparent conductive film (TCF) is considered to be the most favorable material to replace indium tin oxide (ITO) as the next-generation transparent conductive film. However, the disadvantages of AgNWs, such as easy oxidation and high wire-wire junction resistance, dramatically limit its commercial application. In this paper, moisture treatment was adopted, and water was dripped on the surface of AgNWs film or breathed on the surface so that the surface was covered with a layer of water vapor. The morphology of silver nanowire mesh nodes is complex, and the curvature is large. According to the capillary condensation theory, water molecules preferentially condense near the geometric surface with significant curvature. The capillary force is generated, making the wire-wire junction of AgNWs mesh bond tightly, resulting in good ohmic contact. The experimental results show that AgNWs-TCF treated by moisture has better conductivity, with an average sheet resistance of 20 Ω/sq and more uniform electrical properties. The bending test and adhesion test showed that AgNWs-TCF treated by moisture still exhibited good mechanical bending resistance and environmental stability. Full article

Hybrid transparent contacts based on combinations of a transparent conductive oxide and a few graphene monolayers were developed in order to evaluate their optical and electrical performance with the main aim to use them as front contacts in optoelectronic devices. The assessment of the most suitable strategies for their fabrication was performed by testing different protocols addressing such issues as the protection of the device structure underneath, the limitation of sample temperature during the graphene-monolayer transfer process and the determination of the most suitable stacking structure. Suitable metal ohmic electrodes were also evaluated. Among a number of options tested, the metal contact based on Ti + Ag showed the highest reproducibility and the lowest contact resistivity. Finally, with the objective of extracting the current generated from optoelectronic devices to the output pins of an external package, focusing on a near future commercial application, the electrical properties of the connections made with an ultrasonic bonding machine (sonic welding) between the optimized Ti + Ag metal contacts and Al or Au micro-wires were also evaluated. All these results have an enormous potential as hybrid electrodes based on graphene to be used in novel designs of a future generation of optoelectronic devices, such as solar cells. Full article

The effects of Mg on the microstructural, optical, and electrical properties of sol-gel derived ZnO transparent semiconductor thin films and the photoelectrical properties of photodetectors based on Mg_xZn_1−xO (where x = 0 to 0.3) thin films with the metal-semiconductor-metal (MSM) configuration were investigated in this study. All the as-synthesized ZnO-based thin films had a single-phase wurtzite structure and showed high average transmittance of 91% in the visible wavelength region. The optical bandgap of Mg_xZn_1−xO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of the films rose from 6.1 × 10² to 1.4 × 10⁴ Ω·cm with an increase in Mg content from x = 0 to x = 0.3. Compared with those of the pure ZnO thin film, the PL emission peaks of the MgZnO thin films showed an apparent blue-shift feature in the UV and visible regions. The photo-detection capability was investigated under visible, UVA, and UVC light illumination. Linear I-V characteristics were obtained in these ZnO-based photodetectors under dark and light illumination conditions, indicating an ohmic contact between the Au electrodes and ZnO-based thin films. It was found that the pure ZnO photodetector exhibited the best photoconductivity gain, percentage of sensitivity, and responsivity under UVA illumination. Under UVC illumination, the photoconductivity gain and percentage of sensitivity of the MgZnO photodetectors were better than those of the pure ZnO photodetector. Full article

We fabricated an indium tin oxide (ITO)/Ga₂O₃/Ag/Ga₂O₃ multilayer as a transparent conductive electrode for ultraviolet light-emitting diodes (UV LEDs). The electrical and optical properties of the multilayer were improved by optimizing the annealing temperature of the ITO contact layer and the whole ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer, and the thickness of the ITO contact layer and Ag metal layer. After optimization, the sheet resistance and transmittance of the ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer was 3.43 Ω/sq and 86.4% at 335 nm, respectively. The ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer also exhibited a good ohmic contact characteristic with a specific contact resistance of 1.45×10⁻³ Ω·cm². These results show that the proposed ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer is a promising alternative as a p-type electrode for UV LEDs. Full article

Aluminum-doped ZnO (AZO) has huge prospects in the field of conductive electrodes, due to its low price, high transparency, and pro-environment. However, enhancing the conductivity of AZO and realizing ohmic contact between the semiconductor and AZO source/drain (S/D) electrodes without thermal annealing remains a challenge. Here, an approach called pulsed laser deposition (PLD) is reported to improve the comprehensive quality of AZO films due to the high energy of the laser and non-existence of the ion damage. The 80-nm-thick AZO S/D electrodes show remarkable optical properties (transparency: 90.43%, optical band gap: 3.42 eV), good electrical properties (resistivity: 16 × 10⁻⁴ Ω·cm, hall mobility: 3.47 cm²/V·s, carrier concentration: 9.77 × 10²⁰ cm⁻³), and superior surface roughness (R_q = 1.15 nm with scanning area of 5 × 5 μm²). More significantly, their corresponding thin film transistor (TFT) with low contact resistance (R_SD = 0.3 MΩ) exhibits excellent performance with a saturation mobility (µ_sat) of 8.59 cm²/V·s, an I_on/I_off ratio of 4.13 × 10⁶, a subthreshold swing (SS) of 0.435 V/decade, as well as good stability under PBS/NBS. Furthermore, the average transparency of the unpatterned multi-films composing this transparent TFT can reach 78.5%. The fabrication of this TFT can be suitably transferred to transparent arrays or flexible substrates, which is in line with the trend of display development. Full article

Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of the ITO-ZnO/n-GaN system was lower than that of the ITO/n-GaN system. By placing a thin Ti interlayer between the ITO-ZnO/n-GaN interface, nonalloyed ohmic contact was achieved. The inset Ti interlayer was both beneficial both for enhancing the outdiffusion of the nitrogen atoms at the surface of the n-GaN and suppressing the indiffusion of oxygen atoms from the surface of the ITO-ZnO to n-GaN. The figure-of-merit (FOM), evaluated from the specific contact resistance and optical property of the Ti/ITO-ZnO system’s contact to the n-GaN epilayer, was optimized further at an adequate thickness of the Ti interlayer. Full article