In our work, a multi-layer topological insulator (TI) Bi
2Se
3 thin film was prepared by the chemical vapor deposition method (CVD), and its saturable absorption and damage characteristics were experimentally studied. The results show that when the wavelength is 1064 nm,
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In our work, a multi-layer topological insulator (TI) Bi
2Se
3 thin film was prepared by the chemical vapor deposition method (CVD), and its saturable absorption and damage characteristics were experimentally studied. The results show that when the wavelength is 1064 nm, the saturable absorption parameters of TI: Bi
2Se
3 film, including modulation depth α
s, non-saturable loss α
ns, and saturation power intensity I
sat, increase with the increase in film thickness, and the damage threshold is inversely proportional to the film thickness. The thicker the film layer, the lower the damage threshold. Among them, modulation depth α
s is up to 51.2%, minimum non-saturable loss α
ns is 1.8%, maximum saturation power intensity I
sat is 560.8 kW/cm
2, and the damage threshold is up to 909 MW/cm
2. The influence of the controllable thickness of TI: Bi
2Se
3 film on passive Q-switching and mode-locking performance of laser is discussed and analyzed when TI: Bi
2Se
3 film is prepared by the CVD method as a saturable absorber (SA). Finally, the performance of TI: Bi
2Se
3 thin film applied to nanosecond laser isolation at the 1064 nm band is simulated and analyzed. It has the natural advantage of polarization independence, and the maximum isolation can reach 16.4 dB.
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