Oxide Semiconductor and Its Applications
A special issue of Oxygen (ISSN 2673-9801).
Deadline for manuscript submissions: closed (31 August 2021) | Viewed by 4318
Special Issue Editor
2. Intel Corporation, Hillsboro, OR 97124, USA
Interests: memristor; memcomputing; neuromorphic systems; biomimic smart system
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Oxide materials are one of the most advanced key technologies in thin-film transistors (TFTs) for high-end device applications. Amorphous oxide semiconductors (AOSs) have a leading technique for flat panel display, active matrix organic light-emitting display, active matrix liquid crystal display, as well as thin-film electronic devices in front-end and back-end CMOS processes due to their excellent electrical characteristics, such as field effect mobility (μFE), subthreshold swing (SS) and threshold voltage (Vth). One example is transparent conducting oxides (TCOs), which have already been widely used for various optoelectronic applications. Another example is metal oxide semiconductor materials, which have attracted much attention in relation to gas sensors. Using semiconductor materials to fabricate gas sensors has many advantages, for example, the small size, the low cost, and ease of maintenance. In addition, metal oxide semiconductor (MOS) materials, have a high potential to become highly competitive materials in the biosensor market, based on their morphologic versatility, chemical stability, physicochemical interfacial properties, and their ability to combine in composite structures. The aim of this Special Issue is to provide a platform for interdisciplinary research into oxide materials with an understanding of the emerging physical-, chemical-, bio- mechanisms and the various applications in the More Moore and More than Moore era.
Dr. Yao-Feng Chang
Guest Editor
Manuscript Submission Information
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