A Flexible PI/Si/SiO2 Piezoresistive Microcantilever for Trace-Level Detection of Aflatoxin B1 †
Abstract
:1. Introduction
2. Design and Fabrication
2.1. Design of the PI/Si/SiO2 Microcantilever
2.2. Fabrication Process
- (a)
- A thermal oxidation method was used to form a layer of 30 nm-thick SiO2 on the surface of the SOI wafer for the ion-implantation protective layer, and then the single-crystal layer was inverted to form an N+ ring using phosphorus-ion implantation. The implant energy was 100 keV and the implant dose was 5 × 1013 cm−2. Then, the first photolithography was performed, and the patterned single-crystal silicon layer was dry-etched by reactive ion etching (RIE) to form an active region.
- (b)
- The two-fold piezoresistors were patterned by the second photolithography and defined by boron-ion implantation. The implant energy was 100 keV and the implant dose was 4 × 1014 cm−2. The resistance of the piezoresistor was approximately 5 kΩ.
- (c)
- High-concentration boron-ion implantation formed a heavily doped area as the interconnection of the piezoresistors and the contact pads by the third photolithography. The implant energy was 100 keV and the implant dose was 8 × 1015 cm−2. The implantation ions were activated under annealing conditions of 1050 °C and 30 s. A 200 nm SiO2 was deposited as a passivation dielectric layer of the active region by a low pressure chemical vapor deposition (LPCVD).
- (d)
- The metal contact hole was opened by buffer hydrofluoric acid (BHF) wet-etching by the fourth photolithography.
- (e)
- An 800 nm aluminium contact pad was sputtered on the surface of the SOI wafer, and patterned by the fifth photolithography. Then, the SOI wafer was alloyed at 470 °C in a nitrogen environment to form ohmic contact pads.
- (f)
- A 1.2 μm polyimide film was spun on the surface of the SOI wafer, which was only kept on the top of the microcantilever by oxygen-plasma etching after the sixth photolithography.
- (g)
- A 10/50 nm Cr/Au layer was sputtered on the surface of the SOI wafer, and lifted off to form the modified layer of functionalization on the surface of the sensing microcantilever by the seventh photolithography.
- (h)
- After the eighth photolithography with a 3 μm thick photoresist as a mask, the SiO2 inside the reactive well area was totally etched away until the silicon substrate was completely exposed. After an anisotropic dry-etching was introduced to etch the silicon substrate for 10 μm, an isotropic dry-etching was used to continue etching the silicon substrate until the microcantilever structure was completely released.
3. Properties of the Microcantilever
3.1. Spring Constant
3.2. Sensitivity
3.3. Output Stability in PBS Buffer
4. Experiment Preparation
4.1. Reagents and Materials
4.2. Surface Functionalization
5. Results and Discussions
5.1. IgG Detection
5.2. Aflatoxin B1 Detection
5.3. Specific Detections
6. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Tian, Y.; Liu, Y.; Wang, Y.; Xu, J.; Yu, X. A Flexible PI/Si/SiO2 Piezoresistive Microcantilever for Trace-Level Detection of Aflatoxin B1. Sensors 2021, 21, 1118. https://doi.org/10.3390/s21041118
Tian Y, Liu Y, Wang Y, Xu J, Yu X. A Flexible PI/Si/SiO2 Piezoresistive Microcantilever for Trace-Level Detection of Aflatoxin B1. Sensors. 2021; 21(4):1118. https://doi.org/10.3390/s21041118
Chicago/Turabian StyleTian, Yuan, Yi Liu, Yang Wang, Jia Xu, and Xiaomei Yu. 2021. "A Flexible PI/Si/SiO2 Piezoresistive Microcantilever for Trace-Level Detection of Aflatoxin B1" Sensors 21, no. 4: 1118. https://doi.org/10.3390/s21041118
APA StyleTian, Y., Liu, Y., Wang, Y., Xu, J., & Yu, X. (2021). A Flexible PI/Si/SiO2 Piezoresistive Microcantilever for Trace-Level Detection of Aflatoxin B1. Sensors, 21(4), 1118. https://doi.org/10.3390/s21041118